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| 2N6344A, 2N6348A, 2N6349A Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. * Blocking Voltage to 800 Volts * All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability * Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability * Gate Triggering Guaranteed in all Four Quadrants * For 400 Hz Operation, Consult Factory * 8 Ampere Devices Available as 2N6344 thru 2N6349 * Device Marking: Logo, Device Type, e.g., 2N6344A, Date Code MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating *Peak Repetitive Off-State Voltage(Note 1) (Gate Open, TJ = -40 to +110C, Sine Wave 50 to 60 Hz, Gate Open) 2N6344A, 2N6348A 2N6349A *On-State RMS Current (Full Cycle Sine Wave 50 to 60 Hz) (TC = +80C) (TC = +95C) *Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +80C) Preceded and followed by rated current Circuit Fusing Consideration (t = 8.3 ms) *Peak Gate Power (TC = +80C, Pulse Width = 2.0 s) *Average Gate Power (TC = +80C, t = 8.3 ms) *Peak Gate Current (Pulse Width = 2.0 s; TC = +80C) *Peak Gate Voltage (Pulse Width = 2.0 s; TC = +80C) *Operating Junction Temperature Range *Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) 12 6.0 ITSM 100 A 1 I2t PGM PG(AV) IGM VGM TJ Tstg 59 20 0.5 2.0 "10 -40 to +125 -40 to +150 A2s Watts Watt 2 3 4 A Value Unit Volts 1 2 http://onsemi.com TRIACS 12 AMPERES RMS 600 thru 800 VOLTS MT2 G MT1 4 3 TO-220AB CASE 221A STYLE 4 PIN ASSIGNMENT Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 ORDERING INFORMATION A Device Volts C C Preferred devices are recommended choices for future use and best overall value. Package TO220AB TO220AB TO220AB Shipping 500/Box 500/Box 500/Box 2N6344A 2N6348A 2N6349A *Indicates JEDEC Registered Data. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (c) Semiconductor Components Industries, LLC, 2004 1 February, 2004 - Rev. 2 Publication Order Number: 2N6344A/D 2N6344A, 2N6348A, 2N6349A THERMAL CHARACTERISTICS Characteristic *Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RJC TL Max 2.0 260 Unit C/W C ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted; Electricals apply in either direction) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS *Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25C TJ = 110C IDRM, IRRM -- -- -- -- 10 2.0 A mA ON CHARACTERISTICS *Peak On-State Voltage (ITM = "17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%) Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) Quadrant I: MT2(+), G(+) All Quadrant II: MT2(+), G(-) 2N6348A and 2N6349A only Quadrant III: MT2(-), G(-) All Quadrant IV: MT2(-), G(+) 2N6348A and 2N6349A only *MT2(+), G(+); MT2(-), G(-) TC = -40C *MT2(+), G(-); MT2(-), G(+) TC = -40C Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 ohms) Quadrant I: MT2(+), G(+) All Quadrant II: MT2(+), G(-) 2N6348A and 2N6349A only Quadrant III: MT2(-), G(-) All Quadrant IV: MT2(-), G(+) 2N6348A and 2N6349A only *MT2(+), G(+); MT2(-), G(-) TC = -40C *MT2(+), G(-); MT2(-), G(+) TC = -40C Gate Non-Trigger Voltage (VD = Rated VDRM, RL = 10 k ohms, TJ = 110C) *MT2(+), G(+); MT2(-), G(-); MT2(+), G(-); MT2(-), G(+) Holding Current (VD = 12 Vdc, Gate Open) Initiating Current = "200 mA *Turn-On Time (VD = Rated VDRM, ITM = 17 A, IGT = 120 mA, Rise Time = 0.1 s, Pulse Width = 2 s) TC = 25C *TC = -40C tgt VTM IGT -- -- -- -- -- -- VGT -- -- -- -- -- -- VGD 0.2 IH -- -- -- 6.0 -- 1.5 40 75 2.0 s -- -- mA 0.9 0.9 1.1 1.4 -- -- 2.0 2.5 2.0 2.5 2.5 3.0 Volts 6.0 6.0 10 25 -- -- 50 75 50 75 100 125 Volts -- 1.3 1.75 Volts mA DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms, Gate Unenergized, TC = 80C) *Indicates JEDEC Registered Data. dv/dt(c) -- 5.0 -- V/s http://onsemi.com 2 2N6344A, 2N6348A, 2N6349A Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current Quadrant 3 MainTerminal 2 - IH VTM IRRM at VRRM on state IH VTM off state + Voltage IDRM at VDRM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II 2N6348A 2N6349A (-) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant I All IGT - (-) MT2 (-) MT2 + IGT Quadrant III All (-) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant IV 2N6348A 2N6349A - MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 2N6344A, 2N6348A, 2N6349A 110 30 PAV , AVERAGE POWER (WATTS) TC , CASE TEMPERATURE ( C) 60 100 90 120 90 80 = CONDUCTION ANGLE 70 0 2.0 dc 4.0 6.0 8.0 10 12 IT(RMS), RMS ON-STATE CURRENT, (AMP) 14 0 0 2.0 4.0 6.0 8.0 10 IT(RMS), RMS ON-STATE CURRENT (AMP) 12 14 180 16 12 = CONDUCTION ANGLE TJ = 110C 90 4.0 60 = 30 180 120 20 dc 8.0 Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation 1.8 Vgt , GATE TRIGGER VOLTAGE (VOLTS) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -40 -20 1 QUADRANTS 2 3 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (C) 120 140 QUADRANT 4 I GT , GATE TRIGGER CURRENT (mA) VD = 12 V 50 VD = 12 V 30 20 10 7.0 QUADRANT 1 2 3 4 5.0 -60 -40 -20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (C) 120 140 Figure 3. Typical Gate Trigger Voltage Figure 4. Typical Gate Trigger Current http://onsemi.com 4 2N6344A, 2N6348A, 2N6349A 100 70 50 30 20 i TM , INSTANTANEOUS ON-STATE CURRENT (AMP) TJ = 100C 10 7.0 5.0 3.0 2.0 100 1.0 0.7 0.5 0.3 0.2 I TSM , PEAK SURGE CURRENT (AMP) 80 I H , HOLDING CURRENT (mA) 10 7.0 5.0 MAIN TERMINAL #2 POSITIVE 3.0 2.0 -60 20 GATE OPEN MAIN TERMINAL #1 POSITIVE 25C -40 -20 60 0 20 40 80 100 TJ, JUNCTION TEMPERATURE (C) 120 140 Figure 6. Typical Holding Current 60 CYCLE TJ = 100C f = 60 Hz Surge is preceded and followed by rated current 1.0 2.0 3.0 5.0 NUMBER OF CYCLES 7.0 10 40 20 0 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 vTM, MAXIMUM INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 5. On-State Characteristics Figure 7. Maximum Non-Repetitive Surge Current r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.5 0.2 0.1 0.05 ZJC(t) = r(t) * RJC 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 20 50 t,TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 8. Typical Thermal Response http://onsemi.com 5 2N6344A, 2N6348A, 2N6349A PACKAGE DIMENSIONS TO-220AB CASE 221A-07 ISSUE AA SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 -T- B F C T S 4 Q 123 A U K H Z L V G D N J R STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 2N6344A/D This datasheet has been download from: www..com Datasheets for electronics components. |
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