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| FPD200 TOM3 and TOM2 Models 24/01/2005 Modelling Report FPD200 TOM3 and TOM2 Models Version 1.0 - Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. 1 FPD200 TOM3 and TOM2 Models 24/01/2005 Introduction This report describes the models for the FPD200 discrete p-HEMT device. The models coupled with package models (given elsewhere). The model describes the device and the inbuilt inductance provided by the connecting bond wires. The metal fixture up until the connecting bond wires has been de-embedded. Models Two models are provided for different simulators these are as follows: TOM3 This model provides a good fit to the measured data and has an advanced charge form. This allows the TOM3 model to accurately model the device over a wide range of operating conditions. This model is recommended for use in most simulators TOM2 This model is provided for the simulators that do not include TOM3 within there component set. This model employs a similar charge from to the TOM3 but only has a simple charge model. Consequently I recommend this model only be used when the TOM3 component is not present. 2 FPD200 TOM3 and TOM2 Models TOM3 Model 24/01/2005 The TOM3 model was extracted for the FPD200 discrete part is shown below: External Parasitics The following network shows the external parasitics present in the device model: PORT P=2 Z =50 Ohm CdGround1 CAP ID= CdGround1 C=0.00822 pF CdGround2 CAP ID=CdG round2 C=0.0 0822 pF IND ID=Idext L=0. 2414 n H IdExt IND ID= Id L=0. 055 nH Id TOM3/TOM2 Model RES ID=Rd R= 0.860 8 O hm Rd PORT P=1 Z=5 0 O hm IgExt IND ID= Igext L=0.1607 nH Ig IND ID= Ig L=0.155 n H RES ID= Rg R=1.145 Ohm Rg 2 1 TOM3 ID= TOMparms NG=10 TJ=24.85 DegC W= 75 3 CAP ID=CdsExt C= 0.0001 56 pF CdsExt CgGround1 CAP ID=CgG round1 C= 0.051 24 pF CAP ID= CgGround2 C=0.02196 pF CgGround2 IND ID=Is L =0.0 3655 nH Is RES ID=Rs R= 0.748 1 Oh m Rs IND ID= IsExt L=0.0072 nH IsExt PO RT P=3 Z=50 Ohm Figure 1 - Schematic of fitted model including external parasitics 3 FPD200 TOM3 and TOM2 Models Shown below is a table of the external parasitics. CdGround1 CdGround2 CgGround1 CgGround2 IdExt Id IgExt 0.024 pF 0.057 pF 0.01224 pF 0.121 pF 0.2754 nH 0 nH 0.2907 nH Ig IsExt Is Rd Rs Rg CdsExt 24/01/2005 0.136 nH 0.0542 nH 0.01 nH 3.402 3.302 3.243 0.000156 pF Table 1 - External parasitic values 4 FPD200 TOM3 and TOM2 Models 24/01/2005 TOM3 Model Parameters The TOM3 model employs an excellent form for the charge relation within the pHEMT discrete. Shown below are the extracted parameters for the FPD200 device: VTO ALPHA BETA LAMBDA GAMMA Q K VST MST ILK PLK QGQH QGSH QGDH QGIO QGQL QGAG QGAD QGCL QGGB -0.6471 V 3.053 0.000682 -0.02432 0.03358 0.9352 4.279 0.05677 0.2041 1.8E-6 mA 1.5 V 7.349E-16 8.451E-16 2.073E-17 2.002E-6 8.58E-16 2.21 2.241 7.715E-17 144.55 QGG0 CDS IS EG N XTI TAU VBI TAU_GD KGAMMA RG RGSH RD RS LS LG LD NG W 1.227E-16 0.000234 1E-11 mA 0.8 V 1 2 0.001 ns 1V 1000 ns 0.01194 0.01 0 0.01 0.01 0 nH 0 nH 0 nH 2 100 Table 2 - TOM3 Model Parameters Add these parameters to the TOM3 model placed within the external parasitics. 5 FPD200 TOM3 and TOM2 Models 24/01/2005 TOM2 Model Parameters The TOM3 model evolved from the TOM3 model and hence share almost exactly the same form for the calculation of the non-linear current. The TOM2 model only employs a simple charge form and hence should only be used when TOM3 components are not available. Shown below are the extracted elements for the FPD200 device: VTO ALPHA BETA GAMMA DELTA Q NG ND TAU RG RGSH RD RS IS N VBI VDELTA -0.6471 V 3.453 0.000682 0.0155 36.23 0.9 2 0 0.001 0.01 0 0.01 0.01 1E-11 mA 1 1V 0.2 V VMAX CGD CGS CDS RIS RID VBR RDB CBS LS LG LD AFAC NFING EG XTI 0.95 V 7.45E-5 pF 0.002467 pF 0.0002542 pF 0.01 0.01 17 V 1.2E5 1500 pF 0 nH 0 nH 0 nH 200 2 0.8 2 Table 3 - TOM2 Model Parameters Add these parameters to the TOM2 model placed within the external parasitics. 6 FPD200 TOM3 and TOM2 Models 24/01/2005 Results - TOM2 80 IV p5 60 p4 Current (mA) 40 p3 20 p2 p1 0 p1: Vstep = -1 V p3: Vstep = -0.5 V p2: Vstep = -0.75 V p4: Vstep = -0.25 V -20 0 2 4 p5: Vstep = 0 V 6 Voltage 8 10 Figure 2 - Fitted vs. Modelled IV curves for the TOM2 model Sparm Mid 6 0. Swp Max 28GHz 2. 0 0.8 1.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 .4 -0 -0 .6 - 0. 8 .0 -2 Swp Min 0.25GHz Figure 3 - Fitted vs. Modelled S-parameters for the TOM2 model (biased at Vg=-0.3V Vd=7V) -1.0 7 - 5. 0 2 - 0. -10 .0 -4 .0 -3 .0 0. 4 0 3. 0 4. 5.0 0.2 10.0 FPD200 TOM3 and TOM2 Models 24/01/2005 Results - TOM3 IV p5 80 60 p4 Current (mA) 40 p3 20 p2 p1 0 p1: Vstep = -1 V p2: Vstep = -0.75 V p4: Vstep = -0.25 V p3: Vstep = -0.5 V p5: Vstep = 0 V -20 0 2 4 6 Voltage 8 10 Figure 4 - Fitted vs. Modelled IV curves for the TOM3 model Sparm Mid 6 0. Swp Max 28GHz 2. 0 0.8 1.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 10.0 .4 -0 -0 .6 -0.8 .0 -2 Swp Min 0.25GHz Figure 5 - Fitted vs. Modelled S-parameters for the TOM3 model (biased at Vg=-0.3V Vd=7V) 8 -1.0 -5. 0 -0. 2 -10 .0 -4 .0 -3 .0 0. 4 0 3. 0 4. 5.0 0.2 10.0 |
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