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| MAC08BT1, MAC08MT1 Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing. Features http://onsemi.com * * * * * Sensitive Gate Trigger Current in Four Trigger Modes Blocking Voltage to 600 Volts Glass Passivated Surface for Reliability and Uniformity Surface Mount Package Pb-Free Packages are Available TRIAC 0.8 AMPERE RMS 200 thru 600 VOLTS MT2 G MT1 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (Note 1) (Sine Wave, 50 to 60 Hz, Gate Open, MAC08BT1 TJ = 25 to 110C) MAC08MT1 On-State Current RMS (TC = 80C) (Full Sine Wave 50 to 60 Hz) Peak Non-repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25C) Circuit Fusing Considerations (Pulse Width = 8.3 ms) Peak Gate Power (TC = 80C, Pulse Width v 1.0 ms) Average Gate Power (TC = 80C, t = 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 200 600 IT(RMS) ITSM 0.8 8.0 A A Value Unit V SOT-223 CASE 318E STYLE 11 1 A Y W AC08X = = = = MARKING DIAGRAM 4 AYW AC08x G G 2 3 I2t PGM PG(AV) TJ Tstg 0.4 5.0 0.1 -40 to +110 -40 to +150 A2s W W Assembly Location Year Work Week Device Code x= B or M G = Pb-Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT C C 1 2 3 4 Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. ORDERING INFORMATION Device MAC08BT1 Package SOT-223 SOT-223 (Pb-Free) SOT-223 SOT-223 (Pb-Free) Shipping 1000 Tape & Reel 1000 Tape & Reel 1000 Tape & Reel 1000 Tape & Reel THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Ambient PCB Mounted per Figure 1 Thermal Resistance, Junction-to-Tab Measured on MT2 Tab Adjacent to Epoxy Maximum Device Temperature for Soldering Purposes for 10 Secs Maximum Symbol RqJA RqJT TL Max 156 25 260 Unit C/W C/W C MAC08BT1G MAC08MT1 MAC08MT1G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2005 1 December, 2005 - Rev. 5 Publication Order Number: MAC08BT1/D MAC08BT1, MAC08MT1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted; Electricals apply in both directions.) Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) ON CHARACTERISTICS Peak On-State Voltage (Note 2) (IT = "1.1 A Peak) Gate Trigger Current (Continuous dc) All Quadrants (VD = 12 Vdc, RL = 100 W) Holding Current (Continuous dc) (VD = 12 Vdc, Gate Open, Initiating Current = "20 mA) Gate Trigger Voltage (Continuous dc) All Quadrants (VD = 12 Vdc, RL = 100 W) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage (f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS On-State Current Duration = 2.0 mS, VDRM = 200 V, Gate Unenergized, TC = 110C, Gate Source Resistance = 150 W, See Figure 10) Critical Rate-of-Rise of Off State Voltage (Vpk = Rated VDRM, TC= 110C, Gate Open, Exponential Method) 2. Pulse Test: Pulse Width 300 msec, Duty Cycle 2%. (dv/dt)c 1.5 - - V/ms VTM IGT IH VGT - - - - - - - - 1.9 10 5.0 2.0 V mA mA V TJ = 25C TJ = 110C IDRM, IRRM - - - - 10 200 mA mA Symbol Min Typ Max Unit dv/dt 10 - - V/ms Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current Quadrant 3 MainTerminal 2 - IH VTM IRRM at VRRM on state IH VTM off state + Voltage IDRM at VDRM http://onsemi.com 2 MAC08BT1, MAC08MT1 Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II (-) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant I IGT - (-) MT2 (-) MT2 + IGT Quadrant III (-) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant IV - MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used. 0.15 3.8 0.079 2.0 0.091 2.3 0.079 2.0 0.984 25.0 0.059 1.5 0.059 1.5 0.059 1.5 inches mm 0.091 2.3 0.244 6.2 BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR. BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL. MATERIAL: G10 FIBERGLASS BASE EPOXY 0.096 2.44 0.059 1.5 0.096 2.44 0.059 1.5 0.096 2.44 0.472 12.0 Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223 http://onsemi.com 3 MAC08BT1, MAC08MT1 IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 10 R JA , JUNCTION TO AMBIENT THERMAL RESISTANCE, C/W 160 150 140 130 120 110 100 90 80 70 60 50 40 30 TYPICAL MAXIMUM DEVICE MOUNTED ON FIGURE 1 AREA = L2 PCB WITH TAB AREA AS SHOWN L 1.0 4 123 L 0.1 TYPICAL AT TJ = 110C MAX AT TJ = 110C MAX AT TJ = 25C 0 1.0 2.0 3.0 4.0 vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 5.0 MINIMUM FOOTPRINT = 0.076 cm2 0 2.0 4.0 6.0 FOIL AREA (cm2) 8.0 10 0.01 Figure 2. On-State Characteristics T A , MAXIMUM ALLOWABLEAMBIENT TEMPERATURE ( C) Figure 3. Junction to Ambient Thermal Resistance versus Copper Tab Area 110 110 T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) 30 100 90 80 70 60 50 40 30 20 0 MINIMUM FOOTPRINT 50 OR 60 Hz dc = 180 120 100 90 80 70 60 50 40 30 1.0 cm2 FOIL AREA 50 OR 60 Hz dc = 180 120 60 90 30 = CONDUCTION ANGLE 60 90 = CONDUCTION ANGLE 0.4 0.1 0.2 0.3 IT(RMS), RMS ON-STATE CURRENT (AMPS) 0.5 20 0 0.1 0.3 0.4 0.5 0.6 IT(RMS), RMS ON-STATE CURRENT (AMPS) 0.2 0.7 Figure 4. Current Derating, Minimum Pad Size Reference: Ambient Temperature T A , MAXIMUM ALLOWABLEAMBIENT TEMPERATURE ( C) Figure 5. Current Derating, 1.0 cm Square Pad Reference: Ambient Temperature 110 110 30 T(tab) , MAXIMUM ALLOWABLE TAB TEMPERATURE ( C) 105 dc = 180 95 120 90 85 80 REFERENCE: FIGURE 1 = CONDUCTION ANGLE 100 90 80 70 4.0 cm2 FOIL AREA 60 50 dc = 180 120 30 60 90 = CONDUCTION ANGLE 60 100 90 0 0.1 0.3 0.4 0.5 0.6 IT(RMS), RMS ON-STATE CURRENT (AMPS) 0.2 0.7 0.8 0 0.1 0.2 0.3 0.4 0.5 0.6 IT(RMS), ON-STATE CURRENT (AMPS) 0.7 0.8 Figure 6. Current Derating, 2.0 cm Square Pad Reference: Ambient Temperature Figure 7. Current Derating Reference: MT2 Tab http://onsemi.com 4 MAC08BT1, MAC08MT1 1.0 0.9 P(AV), MAXIMUM AVERAGE POWER DISSIPATION (WATTS) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.1 0.3 0.4 0.5 0.6 IT(RMS), RMS ON-STATE CURRENT (AMPS) 0.2 0.7 0.8 0.01 0.0001 0.001 0.01 0.1 1.0 t, TIME (SECONDS) 10 100 = 180 dc 90 = CONDUCTION ANGLE 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 120 30 60 0.1 Figure 8. Power Dissipation Figure 9. Thermal Response, Device Mounted on Figure 1 Printed Circuit Board LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC TRIGGER CHARGE CONTROL TRIGGER CONTROL MEASURE I RS 1N4007 CHARGE CS MT2 1N914 51 W G MT1 - ADJUST FOR + dv/dt(c) 200 V NON-POLAR CL Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information. Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage (dv/dt)c 10 80 60 10 60 Hz 180 Hz 400 Hz COMMUTATING dv/dt dv/dt c , (V/ S) COMMUTATING dv/dt dv/dt c , (V/ S) 300 Hz ITM 110 100 tw f= 1 2 tw 6f I TM (di dt) c + 1000 VDRM = 200 V 1.0 1.0 VDRM 10 1.0 60 70 80 90 100 110 di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS) TJ, JUNCTION TEMPERATURE (C) Figure 11. Typical Commutating dv/dt versus Current Crossing Rate and Junction Temperature Figure 12. Typical Commutating dv/dt versus Junction Temperature at 0.8 Amps RMS http://onsemi.com 5 MAC08BT1, MAC08MT1 60 I GT , GATE TRIGGER CURRENT (mA) 600 Vpk TJ = 110C MAIN TERMINAL #2 POSITIVE 10 IGT3 IGT2 IGT4 IGT1 50 STATIC dv/dt (V/ s) 40 1.0 30 MAIN TERMINAL #1 POSITIVE 20 10 100 1000 RG, GATE - MAIN TERMINAL 1 RESISTANCE (OHMS) 10,000 0.1 - 40 - 20 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (C) 100 Figure 13. Exponential Static dv/dt versus Gate - Main Terminal 1 Resistance Figure 14. Typical Gate Trigger Current Variation 6.0 IH , HOLDING CURRENT (mA) 5.0 4.0 3.0 2.0 1.0 0 - 40 MAIN TERMINAL #2 POSITIVE VGT , GATE TRIGGER VOLTAGE (VOLTS) 1.1 VGT3 VGT2 VGT1 VGT4 MAIN TERMINAL #1 POSITIVE - 20 0 20 40 60 80 100 0.3 - 40 - 20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 15. Typical Holding Current Variation Figure 16. Gate Trigger Voltage Variation http://onsemi.com 6 MAC08BT1, MAC08MT1 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE L D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A A1 b b1 c D E e e1 L1 HE MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10 - MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0 INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 - MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10 4 HE 1 2 3 E b e1 e q C q A 0.08 (0003) A1 L1 STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 7 MAC08BT1/D |
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