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 2.4 GHz High-Linearity Power Amplifier
SST12LP10
SST12LP102.4 GHz High-Linearity Power Amplifier
Preliminary Specifications
FEATURES:
* High Gain: - >26 dB gain across 2.4~2.5 GHz over temperature 0C to +80C High linear output power: - ~27 dBm P1dB - Meets 802.11g OFDM ACPR requirement up to 23 dBm - Over 20 dBm linear output with total system EVM<5% for 54 Mbps 802.11g signal - Meets 802.11b ACPR requirement up to 24 dBm High power-added efficiency/Low operating current for both 802.11g/b applications - ~19% @ POUT = 20 dBm for 802.11g - ~30% @ POUT = 24 dBm for 802.11b Ultra-low Reference Current - ~3 mA Total IREF Low idle current - ~60 mA ICQ * High-speed power-up/down - Turn on/off time (10%~90%) <100 ns - Typical power-up/down delay with driver delay included <200 ns * High temperature stability - ~1 dB gain/power variation between 0C to +80C * Low shut-down current (< 0.1 A) * Simple input/output matching * Packages available - 16-contact VQFN (3mm x 3mm) - Non-Pb (lead-free) packages available
*
*
APPLICATIONS:
* * * * WLAN (IEEE 802.11g/b) Home RF Cordless phones 2.4 GHz ISM wireless equipment
* *
PRODUCT DESCRIPTION
The SST12LP10 is a high-performance power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The SST12LP10 can be easily configured for high-power, high-efficiency applications with superb power-added efficiency while operating over the 2.4~2.5 GHz frequency band. It provides over 26 dB gain with 19% power-added efficiency @ POUT = 20 dBm for 802.11g and 30% poweradded efficiency @ POUT = 24 dBm for 802.11b. The SST12LP10 has excellent linearity (over 20 dBm linear output with total system EVM<5%) which is essential for 54 Mbps 802.11g operation. The power amplifier IC also features easy board-level usage along with high-speed power-up/down control and ultra-low reference current (~3 mA). These features coupled with low operating current make the SST12LP10 ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications. The SST12LP10 is offered in 16-contact VQFN package. See Figure 1 for pin assignments and Table 1 for pin descriptions.
(c)2005 SST Communications Corp. S71280-00-000 1/05 1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice.
2.4 GHz High-Linearity Power Amplifier SST12LP10
Preliminary Specifications
FUNCTIONAL BLOCKS
FUNCTIONAL BLOCK DIAGRAM
VCC1 VCCb 14 NC NC 13 12 VCC2 11 RFOUT 10 RFOUT Bias Circuit NC 4 5 NC 6 VREG1 7 VREG2 8 NC
1280 B1.1
16 NC RFIN RFIN 1 2 3
15
9
NC
(c)2005 SST Communications Corp.
S71280-00-000
1/05
2
2.4 GHz High-Linearity Power Amplifier SST12LP10
Preliminary Specifications
PIN ASSIGNMENTS
VCC1
VCCb 14
NC
16 NC RFIN RFIN NC 1 2 3 4
15
NC 13 12 VCC2 11 RFOUT 10 RFOUT 9 NC 8 NC
1280 16-vqfn P1.0
Top View
(contacts facing down)
RF and DC GND 0 5 NC 6 VREG1 7 VREG2
FIGURE 1: PIN ASSIGNMENTS FOR 16-CONTACT VQFN
PIN DESCRIPTIONS
TABLE 1: PIN DESCRIPTION
Symbol GND NC RFIN RFIN NC NC VREG1 VREG2 NC NC RFOUT RFOUT VCC2 NC VCCb NC VCC1 Pin No. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Power Supply No Connection Power Supply No Connection Power Supply PWR PWR No Connection No Connection O O PWR No Connection No Connection PWR PWR Pin Name Ground No Connection I I Type1 Function The center pad should be connected to RF ground with several low inductance, low resistance vias. Unconnected pins. RF input, DC decoupled RF input, DC decoupled Unconnected pins. Unconnected pins. 1st stage idle current control 2nd stage idle current control Unconnected pins. Unconnected pins. RF output RF output Power supply, 2nd stage Unconnected pins. Supply voltage for bias circuit Unconnected pins. Power supply, 1st stage
T1.0 1280
1. I=Input, O=Output
(c)2005 SST Communications Corp.
3
S71280-00-000
1/05
2.4 GHz High-Linearity Power Amplifier SST12LP10
Preliminary Specifications
ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current specifications. Refer to Figures 2 through 11 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Input power to pins 2 and 3 (PIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm Average output power (POUT). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +28 dBm Supply Voltage at pins 12, 14, 16 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.6V Reference voltage to pins 6 (VREF1) and pin 7 (VREF2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +120C Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Surface Mount Solder Reflow Temperature: . . . . . . . . . . . . . . . . . . . . . . . . . "with-Pb" units1: 240C for 3 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "non-Pb" units: 260C for 3 seconds
1. Certain "with-Pb" package types are capable of 260C for 3 seconds; please consult the factory for the latest information.
OPERATING RANGE
Range Industrial Ambient Temp -40C to +85C VCC 3.3V
TABLE 2: DC ELECTRICAL CHARACTERISTICS
Symbol VCC ICC Supply Current for 802.11g, 20 dBm for 802.11g, 23 dBm for 802.11b, 24 dBm ICQ Idle Current for both 802.11b/g to meet EVM @ 20.5 dBm for only 802.11b to meet ACPR @ 22 dBm IOFF VREG1 VREG2 Shut down current Reference Voltage for 1st Stage, without drop resistor Reference Voltage for 2nd Stage, without drop resistor 70 50 <0.1 2.70 2.70 mA mA A V V
T2.0 1280
Parameter Supply Voltage at pins 12, 14, 16
Min. 3.0
Typ 3.3 160 230 270
Max. 4.2
Unit V mA mA mA
Test Conditions
(c)2005 SST Communications Corp.
S71280-00-000
1/05
4
2.4 GHz High-Linearity Power Amplifier SST12LP10
Preliminary Specifications TABLE 3: AC ELECTRICAL CHARACTERISTICS FOR CONFIGURATION
Symbol fL-U POUT Parameter Frequency range Output power @ PIN = -4 dBm 11b signals @ PIN = -2 dBm 11b signals @ PIN = -8 dBm 11g signals @ PIN = -6 dBm 11g signals G GVAR1 GVAR2 ACPR Added EVM 2f, 3f, 4f, 5f Small signal gain Gain variation over band (2400~2485 MHz) Gain ripple over channel (20 MHz) Meet 11b spectrum mask Meet 11g OFDM 54 MBPS spectrum mask @ 20.5 dBm output with 11g OFDM 54 MBPS signal Harmonics at 22 dBm, without trapping capacitors 0.2 24 23 3 3.5 <-40 22 24 18 20 26 1 dBm dBm dBm dBm dB dB dB dBm dBm % dBc
T3.0 1280
Min. 2400
Typ
Max. 2500
Unit MHz
(c)2005 SST Communications Corp.
S71280-00-000
1/05
5
2.4 GHz High-Linearity Power Amplifier SST12LP10
Preliminary Specifications
TYPICAL PERFORMANCE CHARACTERISTICS TEST CONDITIONS: VCC = 3.3V, TA = 25C
S11 0 0 -2 -4 -6 -8
-60 0
S12
1
2
3
4
5
6
-10 -20 -30 -40 -50
0
1
2
3
4
5
6
-10 -12 -14
-70 -80 -90
S21 30 20 10 0 -10 -20 -30 -40 0 1 2 3 4 5 6
0 0 -2 -4 -6 -8 -10 -12 -14 -16 1 2
S22 3 4 5 6
1280 S-Parms.0.0
FIGURE 2: S-PARAMETERS
S11 0 2.3 -2 -4 -6 -8 -10 -12 -14
1277 In-band-R.0.0
S21 30
2.5 2.6
2.4
25
1280 In-band-G.0.0
20 2.3 2.4 2.5
2.6
FIGURE 3: IN-BAND RETURN LOSS
(c)2005 SST Communications Corp.
FIGURE 4: IN-BAND GAIN FLATNESS
S71280-00-000 1/05
6
2.4 GHz High-Linearity Power Amplifier SST12LP10
Preliminary Specifications
TWO-TONE MEASUREMENTS TEST CONDITIONS: VCC = 3.3V, TA = 25C, F1 = 2.45 GHZ, F2 = 2.451 GHZ
28 26
60 50
24 22
POUT (dBm)
40 IM3 (d Bc) 30 20
1280 PoutVSPin.0.0
20 18 16 14 12 10 -15 -13 -11 -9 -7
PIN (dBm)
10 0 5 10 15 Pout (dBm ) 20 25
-5
-3
-1
1
30
FIGURE 5: RF OUTPUT POWER
FIGURE 8: IM3 VS POUT
28 27 26
Power Level (dBc)
0 -10 2nd Harmonic
24
1280 GainVSPout.0.0
-30 -40 -50 -60 10 15 20 Pout (dBm ) 25 30
23 22 21 20 5 10 15 20 25 30 Pout (dBm)
FIGURE 6: GAIN VS POUT
FIGURE 9: HARMONICS
450 400 Current Consumption (mA) 350 300 250 200 150 100 50 0 5 10 15 20 25 30 Pout (dBm )
1280 CurrVsPout.0.0
FIGURE 7: ICC VS POUT
(c)2005 SST Communications Corp.
S71280-00-000
1280 Harmonics.0.0
1/05
Gain (dB)
25
-20
3rd Harmonic
7
1280 IM3vsPout.0.0
2.4 GHz High-Linearity Power Amplifier SST12LP10
Preliminary Specifications
TYPICAL PERFORMANCE CHARACTERISTICS TEST CONDITIONS: VCC = 3.3V, TA = 25C, F = 2.45 GHZ WHEN NOT SPECIFIED
0 -10 Po wer L evel (d Bc) -20 -30
1280 Spectrum11g.0.0
Pout=20dBm Pout=22dBm Pout=23dBm
-40 -50 -60 -70 2.40E+09
2.42E+09
2.44E+09
2.46E+09
2.48E+09
2.50E+09
Frequency (Hz)
5 4 Added EVM (%) 3 2 1 0 15 16 17 18 19 Pout (dBm)
1280 AddEVM.0.0
20
FIGURE 10: 802.11G SPECTRUM AT 20/22/23 DBM, ADDED EVM @ 2.45 GHZ
(c)2005 SST Communications Corp.
S71280-00-000
1/05
8
2.4 GHz High-Linearity Power Amplifier SST12LP10
Preliminary Specifications
0 -10
Power Level (dBc)
2.412GHz 2.452GHz 2.482GHz
-20 -30 -40 -50 -60 -70 2.35 2.4 2.45
Frequency (GHz)
2.5
2.55
FIGURE 11: 802.11B SIGNAL OUTPUT MASK AT 24 DBM
C5 100pF
C6 0.1 F
C7 1000pF
C8 0.1 F
C9 4.7 F Vcc
L1 12nH/0805 16 15 14 13
1
12
C1 47pF
50/125mil
2
11
50/140mil
C11 47pF
50 RFin
C2 1.2pF 3 Bias circuit 4 5 6 7 8
10
C10 2.4p
50 RFOUT
9
*
C3 10pF
C4 10pF
R2 and R3 can be adjusted to fit any reference voltage supply between 2.7~3.3V, e.g. R1=R2=0 for VREG1=VREG2=2.7V and R1=100 R2=100 for VREG1=VREG2=2.8V.
Center slug to RF ground
R1 0* R2 0*
1280 Schematic.0.1
VREG1 VREG2
FIGURE 12: TYPICAL SCHEMATIC FOR HIGH-POWER, HIGH-EFFICIENCY 802.11B/G APPLICATIONS
(c)2005 SST Communications Corp.
S71280-00-000
1280 SigOutMsk.0.0
1/05
9
2.4 GHz High-Linearity Power Amplifier SST12LP10
Preliminary Specifications
PRODUCT ORDERING INFORMATION
SST12LP SSTxxLP 10 xx - QVC - XXX E X Environmental Attribute E1 = non-Pb contact (lead) finish Package Modifier C = 16 contact Package Type QV = VQFN Product Family Identifier Product Type P = Power Amplifier Voltage L = 3.0-3.6V Frequency of Operation 2 = 2.4 GHz Product Line 1 = SST Communications
1. Environmental suffix "E" denotes non-Pb solder. SST non-Pb solder devices are "RoHS Compliant".
Valid combinations for SST12LP10 SST12LP10-QVC SST12LP10-QVCE SST12LP10 Evaluation Kits SST12LP10-QVC-K SST12LP10-QVCE-K
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations.
(c)2005 SST Communications Corp.
S71280-00-000
1/05
10
2.4 GHz High-Linearity Power Amplifier SST12LP10
Preliminary Specifications
PACKAGING DIAGRAMS
TOP VIEW
SIDE VIEW
0.2
BOTTOM VIEW
See notes 2 and 3 Pin #1 1.7
Pin #1
3.00 0.10 1.7 0.076 0.05 Max 3.00 0.10 1.00 0.80 0.30 0.18
1mm
0.5 BSC
0.45 0.35
Note: 1. Complies with JEDEC JEP95 MO-220I, variant VEED except external paddle nominal dimensions. 2. From the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch. 3. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. Untoleranced dimensions are nominal target dimensions. 5. All linear dimensions are in millimeters (max/min).
16-vqfn-3x3-QVC-0.0
16-CONTACT VERY-THIN QUAD FLAT NO-LEAD (VQFN) SST PACKAGE CODE: QVC TABLE 4: REVISION HISTORY
Revision 00 Description Date Jan 2005
*
S71280: SST conversion of data sheet GP1210
(c)2005 SST Communications Corp.
S71280-00-000
1/05
11
2.4 GHz High-Linearity Power Amplifier SST12LP10
Preliminary Specifications
CONTACT INFORMATION Marketing
SST Communications Corp. 2951 28th Street, Ste. 2040 Santa Monica, CA 90405 Tel: 310-581-1650 x27 Fax: 310-581-1663
Sales
NORTH AMERICA Silicon Storage Technology, Inc. Les Crowder Technical Sales Support - Major Accounts 1922 Colina Salida Del Sol San Clemente, CA 92673-3652 USA Tel: 949-495-6437 Cell: 714-813-6636 Fax: 949-495-6364 E-mail: lcrowder@sst.com EUROPE Silicon Storage Technology Ltd. Ralph Thomson Applications Manager Mark House 9-11 Queens Road Hersham KT12 5LU UK Tel: +44 (0) 1869 321 431 Cell: +44 (0) 7787 508 919 E-mail: rthomson@sst.com JAPAN SST Japan Yashushi Yoshinaga Sales Manager 6F Kose #2, 1-14-20 Shin-Yokohama, Kohoku-ku, Yokohama 222-0033 Kanagawa, Japan Tel: (81) 45-471-1851 Fax: (81) 45-471-3285 Email: yoshi@sst.com ASIA PACIFIC NORTH SST Macao H. H. Chang Senior Director, Sales Room A, 8th Floor, Macao Financial Centre, No. 230-246, Rua Pequim, Macao Tel: (853) 706-022 Fax: (853) 706-023 E-mail: hchang@sst.com ASIA PACIFIC SOUTH SST Communications Co. Andy Chang Director of Sales 2F, No. 415, Tiding Blvd., Sec.2, Neihu, Taipei, Taiwan, R.O.C. Tel: 02-2656-2888 x220 Fax: 02-2656-2889 E-mail: achang@sst.com KOREA SST Korea Charlie Shin Country Manager Rm# 1101 DonGu Root Bldg, 16-2 Sunae-Dong, Bundang-Gu, Sungnam, Kyunggi-Do Korea, 463-020 Tel: (82) 31-715-9138 Fax: (82) 31-715-9137 Email: cshin@sst.com
Silicon Storage Technology, Inc. * 1171 Sonora Court * Sunnyvale, CA 94086 * Telephone 408-735-9110 * Fax 408-735-9036 www.SuperFlash.com or www.sst.com
(c)2005 SST Communications Corp. S71280-00-000 1/05
12


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