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STE50DE100
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBTTM 1000 V - 50 A - 0.026 W POWER MODULE
Table 1: General Features
VCS(ON) 1.3 V
n
Figure 1: Package
RCS(ON) 0.026 W
IC 50 A
n
n n n
HIGH VOLTAGE / HIGH CURRENT CASCODE CONFIGURATION ULTRA LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 kHz ULTRA LOW CISS LOW DYNAMIC VCS(ON) ISOTOP
APPLICATION n INDUSTRIAL CONVERTERS n WELDING DESCRIPTION The STE50DE100 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STE50DE100 is designed for use in industrial converters and/or welding equipment.
Figure 2: Internal Schematic Diagram
Electrical Symbol Table 2: Order Code
Part Number STE50DE100 Marking STE50DE100 Package ISOTOP
Device Structure
Packaging TUBE
October 2004
Rev. 1
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Table 3: Absolute Maximum Ratings
Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ VISO Parameter Collector-Source Voltage (VBS = VGS = 0 V) Base-Source Voltage (IC= 0, VGS = 0 V) Source-Base Voltage (IC= 0, VGS = 0 V) Gate-Source Voltage Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 1ms) Total Dissipation at TC 25 oC Storage Temperature Max. Operating Junction Temperature Insulation Withstand Voltage (AC-RMS) from All Four Leads to External Heatsink Value 1000 40 12 20 50 150 10 50 160 -65 to 150 150 2500 Unit V V V V A A A A W C C V
Table 4: Thermal Data
Rthj-case Rthc-h Thermal Resistance Junction-Case Max 0.78 0.05
oC/W oC/W
Thermal Resistance Case-heatsink with Conductive Grease Applied Max
Table 5: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
Symbol ICS(SS) IBS(OS) ISB(OS) Parameter Collector-Source Current (VBS = VGS = 0 V) Base-Source Current (IC = 0 , VGS = 0 V) Source-Base Current (IC = 0 , VGS = 0 V) IGS(OS) Gate-Source Leakage VCS(ON) Collector-Source ON Voltage VGS = 20 V IC = 50 A IC = 30 A IB = 10 A IB = 3 A VGS = 10 V VGS = 10 V VGS = 10 V 3 6 2.2 1.4 3 3.7 2500 60 4.5 1.3 1.1 7 13 V V V pF nC 500 nA V V VSB(OS) = 10 V 100 mA Test Conditions VCS(SS) = 1000 V VBS(OS) = 40 V Min. Typ. Max. 100 10 Unit mA mA
hFE
DC Current Gain
(see figure 14) IC = 50 A VCS = 1 V IC = 30 A IC = 50 A IC = 30 A VBS = VGS VCS = 25 V VGS = VCB = 0 VCS = 25 V VCB = 0
VBS(ON) Base-Source ON Voltage VGS(th) Ciss Gate Threshold Voltage Input Capacitance
VCS = 1 V VGS = 10 V IB = 10 A VGS = 10 V IB = 3 A VGS = 10 V IB = 250 mA f = 1MHZ VGS = 10 V IC = 50 A
QGS(tot) Gate-Source Charge
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Symbol ts tf ts tf VCSW Parameter INDUCTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time VGS = 10 V RG = 47 W IC = 25 A VGS = 10 V RG = 47 W IC = 25 A IB = 5 A Test Conditions VClamp = 800 V tp = 4 ms (see figure 15) VClamp = 800 V tp = 4 ms IB = 2.5 A (see figure 15) 1000 5.5 0.43 6 ms ns V V 0.65 10 ms ns Min. Typ. Max. Unit
Maximum Collector-Source RG = 47 W hFE = 5 A IC = 35 A Voltage without Snubber VCS(dyn) Collector-Source Dynamic VCC = VClamp = 300 V VGS = 10 V Voltage RG = 47 W IB = 5 A (500 ns) IBpeak = IC = 25 A tpeak = 500 ns VCS(dyn) Collector-Source Dynamic Voltage (1ms) VCC = VClamp = 300 V RG = 47 W IBpeak = IC = 25 A VGS = 10 V IB = 5 A tpeak = 500 ns
4.8
V
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Figure 3: Output Characteristics Figure 6: Gate Threshold Voltage vs Temperature
Figure 4: Reverse Biased Safe Operating Area
Figure 7: Dynamic Collector-Emitter Saturation Voltage
Figure 5: DC Current Gain
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Figure 8: Collector-Source On Voltage Figure 11: Collector-Source On Voltage
Figure 9: Base-Source On Voltage
Figure 12: Base-Source On Voltage
Figure 10: Inductive Load Switching Time
Figure 13: Inductive Load Switching Time
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Figure 14: Static VCS(ON) Test Circuit
Figure 15: Inductive Load Switching and RBSOA Test Circuit
Figure 16: Inductive Load Turn-on Switching and Dynamic VCS(ON) Test Circuit
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ISOTOP MECHANICAL DATA
DIM. MIN. A B C D E F G H J K L M N O 11.8 8.9 1.95 0.75 12.6 25.15 31.5 4 4.1 14.9 30.1 37.8 4 7.8 8.2 4.3 15.1 30.3 38.2 mm TYP. MAX. 12.2 9.1 2.05 0.85 12.8 25.5 31.7 MIN. 0.466 0.350 0.076 0.029 0.496 0.990 1.240 0.157 0.161 0.586 1.185 1.488 0.157 0.307 0.322 0.169 0.594 1.193 1.503 inch TYP. MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248
G O B
A
N
D
E
J K L M
H
C
F
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Table 6: Revision History
Date 06-Oct-2004 Release 1 First Release. Change Designator
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
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