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| DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES * Ideal for low noise high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz * Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz * SiGe technology (fT = 60 GHz, fmax = 60 GHz) * Flat-lead 4-pin thin-type super minimold (M04) package ORDERING INFORMATION Part Number 2SC5761 2SC5761-T2 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form * 8 mm wide embossed taping * Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature 2 Symbol VCBO VCEO VEBO IC Ptot Note Ratings 8.0 2.3 1.2 35 80 150 -65 to +150 Unit V V V mA mW C C Tj Tstg Note Mounted on 1.08 cm x 1.0 mm (t) glass epoxy substrate THERMAL RESISTANCE Parameter Junction to Case Resistance Symbol Rth (j-c) Value 150 Unit C/W Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10212EJ02V0DS (2nd edition) Date Published May 2003 CP(K) Printed in Japan The mark ! shows major revised points. NEC Compound Semiconductor Devices 2001, 2003 2SC5761 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Insertion Power Gain Noise Figure Reverse Transfer Capacitance Maximum Stable Power Gain Gain 1 dB Compression Output Power 3rd Order Intermodulation Distortion Output Intercept Point S21e NF Cre Note 2 2 Symbol Test Conditions MIN. TYP. MAX. Unit ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 mA VBE = 0.5 V, IC = 0 mA VCE = 2 V, IC = 5 mA - - 200 - - - 200 200 400 nA nA - VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Zopt VCB = 2 V, IE = 0 mA, f = 1 MHz VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 2 V, IC = 20 mA, f = 2 GHz 16.0 - - 18.0 - - 18.0 0.9 0.17 20.0 12.0 22.0 - 1.1 0.22 - - - dB dB pF dB dBm dBm MSG Note 3 PO (1 dB) OIP3 Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION Rank Marking hFE Value FB T16 200 to 400 2 Data Sheet PU10212EJ02V0DS 2SC5761 TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation Ptot (mW) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) 300 250 200 150 100 80 50 Mounted on Glass Epoxy Board (1.08 cm2 x 1.0 mm (t) ) 0.4 f = 1 MHz 0.3 0.2 0.1 0 25 50 75 100 125 150 0 2 4 6 8 10 Ambient Temperature TA (C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 10 1 0.1 0.01 0.001 VCE = 2 V Collector Current IC (mA) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 40 35 30 25 20 15 10 5 190 A 160 A 130 A 100 A 70 A 40 A IB = 10 A 1 2 3 Collector Current IC (mA) 0.0001 0.0 0.2 0.4 0.6 0.8 1.0 0 Base to Emitter Voltage VBE (V) Collector to Emitter Voltage VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 VCE = 1 V 1 000 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 2 V DC Current Gain hFE 100 DC Current Gain hFE 100 10 0.1 1 10 100 10 0.1 1 10 100 Collector Current IC (mA) Collector Current IC (mA) Data Sheet PU10212EJ02V0DS 3 2SC5761 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 40 Gain Bandwidth Product fT (GHz) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 40 Gain Bandwidth Product fT (GHz) 35 30 25 20 15 10 5 0 1 VCE = 1 V f = 2 GHz 35 30 25 20 15 10 5 0 1 VCE = 2 V f = 2 GHz 10 Collector Current IC (mA) 100 10 Collector Current IC (mA) 100 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 35 30 25 20 15 10 5 0 0.1 1 Frequency f (GHz) |S21e|2 MSG VCE = 0.5 V IC = 20 mA 35 30 25 20 15 10 5 0 0.1 1 Frequency f (GHz) |S21e|2 MSG VCE = 1 V IC = 20 mA MAG MAG 10 10 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 35 30 25 20 15 10 5 0 0.1 1 Frequency f (GHz) |S21e|2 MSG VCE = 2 V IC = 20 mA MAG 10 4 Data Sheet PU10212EJ02V0DS 2SC5761 INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) 30 25 20 15 10 5 0 1 VCE = 2 V f = 1 GHz 30 25 20 15 10 5 0 1 MSG |S21e|2 VCE = 2 V f = 2 GHz MSG |S21e|2 10 Collector Current IC (mA) 100 10 Collector Current IC (mA) 100 INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) 30 25 20 15 VCE = 2 V f = 5 GHz MAG 10 |S21e|2 5 0 1 10 Collector Current IC (mA) 100 Data Sheet PU10212EJ02V0DS 5 2SC5761 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 25 20 VCE = 2 V, f = 1 GHz Icq = 5 mA (RF OFF) OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 80 70 25 20 VCE = 2 V, f = 2 GHz Icq = 5 mA (RF OFF) 80 70 60 Pout 50 40 30 IC 20 10 Collector Current IC (mA) 15 Pout 10 5 0 -5 -10 -15 -20 -15 -10 -5 IC 60 50 40 30 20 10 0 0 15 10 5 0 -5 -10 -15 -20 -15 -10 -5 0 0 Input Power Pin (dBm) Input Power Pin (dBm) OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 25 20 VCE = 2 V, f = 3 GHz Icq = 5 mA (RF OFF) 80 70 60 50 15 10 5 0 -5 -10 IC -15 -20 -15 -10 -5 Pout 40 30 20 10 0 0 Input Power Pin (dBm) 6 Data Sheet PU10212EJ02V0DS Collector Current IC (mA) Output Power Pout (dBm) Collector Current IC (mA) Output Power Pout (dBm) Output Power Pout (dBm) 2SC5761 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER 70 60 50 40 30 20 10 0 -5 0 5 10 15 20 VCE = 2 V Icq = 5 mA f = 1 GHz off set = 1 MHz 3rd Order Intermodulation Distortion IM3 (dBc) 3rd Order Intermodulation Distortion IM3 (dBc) 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER 70 60 50 40 30 20 10 0 -5 0 5 10 15 20 VCE = 2 V Icq = 5 mA f = 2 GHz off set = 1 MHz Output Power (at 1 tone) Pout (dBm) Output Power (at 1 tone) Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER 70 60 50 40 30 20 10 0 -5 0 5 10 15 20 VCE = 2 V Icq = 5 mA f = 3 GHz off set = 1 MHz Output Power (at 1 tone) Pout (dBm) Data Sheet PU10212EJ02V0DS 7 2SC5761 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 Ga 25 5 Ga Associated Gain Ga (dB) Associated Gain Ga (dB) Associated Gain Ga (dB) Associated Gain Ga (dB) Noise Figure NF (dB) Noise Figure NF (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 4 20 4 20 3 15 3 15 2 10 2 10 1 NF 0 1 10 Collector Current IC (mA) VCE = 1 V f = 1 GHz 5 0 100 1 0 5 NF 1 10 Collector Current IC (mA) VCE = 2 V f = 1 GHz 0 100 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 VCE = 1 V f = 1.5 GHz Noise Figure NF (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 5 VCE = 2 V f = 1.5 GHz Associated Gain Ga (dB) Noise Figure NF (dB) 25 Ga 4 Ga 20 4 20 3 15 3 15 2 10 2 10 1 NF 0 1 10 Collector Current IC (mA) 5 0 100 1 NF 0 1 10 Collector Current IC (mA) 5 0 100 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 VCE = 1 V f = 2 GHz Associated Gain Ga (dB) Noise Figure NF (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 5 VCE = 2 V f = 2 GHz 25 Ga 3 15 Noise Figure NF (dB) 4 20 4 Ga 20 3 15 2 10 2 10 1 0 5 NF 1 10 Collector Current IC (mA) 0 100 1 0 NF 5 0 100 1 10 Collector Current IC (mA) 8 Data Sheet PU10212EJ02V0DS 2SC5761 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 VCE = 1 V f = 2.5 GHz Associated Gain Ga (dB) Noise Figure NF (dB) Noise Figure NF (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 5 VCE = 2 V f = 2.5 GHz 25 Ga 3 15 Ga 3 15 2 10 2 10 1 0 NF 5 0 100 1 0 NF 5 0 100 1 10 Collector Current IC (mA) 1 10 Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 VCE = 1 V f = 3 GHz Associated Gain Ga (dB) Noise Figure NF (dB) Noise Figure NF (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 5 VCE = 2 V f = 3 GHz Associated Gain Ga (dB) 25 4 Ga 20 4 Ga 20 3 15 3 15 2 10 2 10 1 0 NF 5 0 100 1 0 NF 5 0 100 1 10 Collector Current IC (mA) 1 10 Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 VCE = 1 V f = 4 GHz Associated Gain Ga (dB) Noise Figure NF (dB) Noise Figure NF (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 5 VCE = 2 V f = 4 GHz Associated Gain Ga (dB) 25 4 20 4 20 3 Ga 2 15 3 Ga 2 15 10 10 1 0 NF 5 0 100 1 0 NF 5 0 100 1 10 Collector Current IC (mA) 1 10 Collector Current IC (mA) Data Sheet PU10212EJ02V0DS 9 Associated Gain Ga (dB) 4 20 4 20 2SC5761 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 VCE = 1 V f = 5 GHz 25 5 VCE = 2 V f = 5 GHz NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 Associated Gain Ga (dB) 3 Ga 15 3 Ga 2 NF 15 2 10 10 1 0 NF 5 0 100 1 0 5 0 100 1 10 Collector Current IC (mA) 1 10 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] [Device Parameters] URL http://www.csd-nec.com/ 10 Data Sheet PU10212EJ02V0DS Associated Gain Ga (dB) Noise Figure NF (dB) Noise Figure NF (dB) 4 20 4 20 2SC5761 EQUAL NF CIRCLE VCE = 2 V IC = 5 mA f = 1 GHz NFmin = 0.8 dB opt Unstable Area 1.0 dB 1.5 dB 2.5 4.0 dB 2.0 dB dB 3.5 dB 3.0 dB VCE = 2 V IC = 5 mA f = 2 GHz NFmin = 0.85 dB opt 1.0 dB Unstable Area 1.5 d B 2.0 dB 2.5 d B 3.0 dB 4.0 dB 3.5 dB Data Sheet PU10212EJ02V0DS 11 2SC5761 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm) 0.40+0.1 -0.05 2.05 0.1 0.30+0.1 -0.05 0.65 4 0.30+0.1 -0.05 0.11+0.1 -0.05 0.65 1.25 0.1 2 2.0 0.1 0.60 3 T16 1.25 0.65 0.59 0.05 0.30+0.1 -0.05 PIN CONNECTIONS 1. 2. 3. 4. Emitter Collector Emitter Base 12 Data Sheet PU10212EJ02V0DS 1 1.30 2SC5761 * The information in this document is current as of May, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 Data Sheet PU10212EJ02V0DS 13 2SC5761 For further information, please contact NEC Compound Semiconductor Devices, Ltd. 5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: salesinfo@csd-nec.com NEC Compound Semiconductor Devices Hong Kong Limited Hong Kong Head Office FAX: +852-3107-7309 E-mail: ncsd-hk@elhk.nec.com.hk TEL: +852-3107-7303 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Korea Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0302-1 |
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