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| FDB8447L 40V N-Channel PowerTrench(R) MOSFET February 2007 FDB8447L 40V N-Channel PowerTrench(R) MOSFET 40V, 50A, 8.5m Features General Description This N-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench(R) technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application. Max rDS(on) = 8.5m at VGS = 10V, ID = 14A Max rDS(on) = 11m at VGS = 4.5V, ID = 11A Fast Switching RoHS Compliant Application Inverter Power Supplies D D G G S TO-263AB FDB Series S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed Drain-Source Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC= 25C (Note 1a) (Note 3) TC= 25C TC= 25C TA= 25C (Note 1) (Note 1a) Ratings 40 20 50 66 15 100 153 60 3.1 -55 to +150 mJ W C A Units V V Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 2.1 40 C/W Package Marking and Ordering Information Device Marking FDB8447L Device FDB8447L Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units (c)2007 Fairchild Semiconductor Corporation FDB8447L Rev.C 1 www.fairchildsemi.com FDB8447L 40V N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 32V, VGS = 0V VGS = 20V, VGS = 0V 40 35 1 100 V mV/C A nA On Characteristics (Note 2) VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 14A VGS = 4.5V, ID = 11A VGS = 10V, ID = 14A, TJ=125C VDS = 5V, ID = 14A 1 1.9 -5 7.4 8.7 10.8 58 8.5 11.0 12.4 S m 3 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 20V, VGS = 0V, f = 1MHz f = 1MHz 1970 250 150 1.0 2620 335 225 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge, VGS = 10V Total Gate Charge, VGS = 5V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDD =20V, ID = 14A VGS = 10V VDD = 20V, ID = 14A VGS = 10V, RGEN = 6 11 6 28 4 37 20 6 7 20 12 45 10 52 28 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 14A (Note 2) 0.8 28 24 1.2 42 36 V ns nC IF = 14A, di/dt = 100A/s Notes: 1: RJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a. 40C/W when mounted on a 1 in2 pad of 2 oz copper b. 62.5C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3: Starting TJ = 25C, L = 1mH, IAS = 17.5A, VDD = 40V, VGS = 10V. FDB8447L Rev.C 2 www.fairchildsemi.com FDB8447L 40V N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 100 ID, DRAIN CURRENT (A) 3.0 VGS = 3V 80 60 40 20 0 VGS = 10V VGS = 4.5V VGS = 4V 2.5 VGS = 3.5V 2.0 1.5 1.0 VGS = 10V VGS = 4.5V VGS = 3.5V VGS = 4V VGS = 3V 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 0.5 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 0 20 40 60 80 100 ID, DRAIN CURRENT(A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 25 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -75 ID = 14A VGS = 10V ID = 7A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 20 15 TJ = 125oC 10 TJ = 25oC -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 5 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On Resistance vs Junction Temperature IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 100 VGS = 0V 100 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX ID, DRAIN CURRENT (A) 80 VDD = 5V 10 1 0.1 0.01 60 40 TJ = 25oC TJ = 25oC TJ = 125oC TJ = -55oC 20 TJ = 125oC TJ = -55oC 0 1 2 3 VGS, GATE TO SOURCE VOLTAGE (V) 4 0.001 0.0 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDB8447L Rev.C 3 www.fairchildsemi.com FDB8447L 40V N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 ID = 14A 3000 VDD = 10V 8 6 Ciss CAPACITANCE (pF) VDD = 20V VDD = 30V 1000 Coss 4 2 0 Crss 100 50 0.1 f = 1MHz VGS = 0V 0 10 20 30 Qg, GATE CHARGE(nC) 40 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 80 ID, DRAIN CURRENT (A) 20 IAS, AVALANCHE CURRENT(A) 10 60 VGS = 10V TJ = 25oC TJ = 125oC 40 Limited by Package VGS = 4.5V 20 RJC = 2.1 C/W o 1 0.01 0.1 1 10 tAV, TIME IN AVALANCHE(ms) 100 0 25 50 75 100 o 125 150 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 300 ID, DRAIN CURRENT (A) Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - T c -------------------125 Tc = 25oC 100 100us 10 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TC = 25oC 1ms 10ms 100ms P(PK), PEAK TRANSIENT POWER (W) 100 SINGLE PULSE 0.1 0.1 1 10 100 50 -4 10 10 -3 VDS, DRAIN to SOURCE VOLTAGE (V) 10 10 t, PULSE WIDTH (s) -2 -1 10 0 10 1 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDB8447L Rev.C 4 www.fairchildsemi.com FDB8447L 40V N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZJA 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.1 SINGLE PULSE t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 0.05 -4 10 10 -3 10 -2 10 -1 10 0 10 1 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDB8447L Rev.C 5 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Across the board. Around the world.TM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM 2 E CMOSTM (R) EcoSPARK EnSignaTM FACT Quiet SeriesTM (R) FACT (R) FAST FASTrTM FPSTM (R) FRFET GlobalOptoisolatorTM GTOTM (R) HiSeCTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM MICROCOUPLERTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM (R) OPTOLOGIC (R) OPTOPLANAR PACMANTM POPTM (R) Power220 (R) Power247 PowerEdgeTM PowerSaverTM (R) PowerTrench Programmable Active DroopTM (R) QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ScalarPumpTM SMART STARTTM (R) SPM STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM (R) The Power Franchise TM TinyLogic TINYOPTOTM TinyPowerTM TinyWireTM TruTranslationTM SerDesTM (R) UHC UniFETTM VCXTM WireTM (R) TinyBoostTM TinyBuckTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I24 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. No Identification Needed Full Production Obsolete Not In Production (c) 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com |
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