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| UTC UT136E TRIACS DESCRIPTION Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. TRIAC SYMBOL MT2 1 TO-220 G MT1 1:MT1 2:MT2 3:GATE ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive peak off-state voltages UT136E-5 UT136E-6 UT136E-8 SYMBOL VDRM IT(RMS) RATINGS 500* 600* 800 4 UNIT V RMS on-state current full sine wave; Tmb 107 C Non-repetitive peak on-state current (Full sine wave; Tj = 25 C prior to surge) t = 20ms t = 16.7 ms I2t for fusing t = 10 ms Repetitive rate of rise of on-state current after triggering ITM = 6 A; IG = 0.2A;dIG /dt = 0.2A/s T2+ G+ T2+ GT2- GT2- G+ A ITSM 25 27 3.1 A A2s I2t dIT /dt 50 50 50 10 A/s Peak gate voltage VGM 5 V Peak gate current IGM 2 A Peak gate power PGM 5 W Average gate power (over any 20 ms period) PG(AV) 0.5 W Storage temperature Tstg -40 ~ 150 Operating junction temperature Tj 125 *Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may switch to the on-state. The rate of rise of current should not exceed 3A/s. UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R401-009,C UTC UT136E THERMAL RESISTANCES PARAMETER Thermal resistance Junction to mounting base Full cycle Half cycle Thermal resistance Junction to ambient (In free air) TRIAC SYMBOL Rth j-mb Rth j-a 60 MIN TYP MAX 3.0 3.7 UNIT K/W K/W STATIC CHARACTERISTICS (Tj=25C, unless otherwise stated) PARAMETER Gate trigger current IGT SYMBOL CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400V ; IT = 0.1 A; Tj =125C VD = VDRM(max) ; Tj = 125 C MIN TYP 2.5 4.0 5.0 11 3.0 10 2.5 4.0 2.2 1.4 0.7 0.4 0.1 MAX 10 10 10 25 15 20 15 20 15 1.7 1.5 UNIT mA Latching current IL mA Holding current On-state voltage Gate trigger voltage IH VT VGT 0.25 mA V V V mA Off-state leakage current ID 0.5 DYNAMIC CHARACTERISTICS(Tj=25C, unless otherwise stated) PARAMETER Critical rate of rise of Off-state voltage Gate controlled turn-on time SYMBOL dVD /dt tgt CONDITIONS VDM = 67% VDRM(max) ; Tj =125C; exponential waveform; gate open circuit ITM = 6 A; VD= VDRM(max) ; IG=0.1A; dIG/dt=5A/s MIN TYP 50 2 MAX UNIT V/s s UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R401-009,C UTC UT136E TYPICAL CHARACTERISTICS 8 Ptot/W 7 6 5 4 3 2 1 0 0 1 Tmb(max)/C IT(RMS)/A TRIAC 101 5 4 3 2 1 104 =180 107 =120 =90 110 =60 113 =30 116 119 122 107 125 5 2 3 4 IT(RMS)/A Fig.1. Maximum on-state dissipation,Ptot, versus rms on-state current,IT(RMS)where =conduction angle. 0 -50 0 50 100 150 Tmb/C Fig.4. Maximum permissible rms current lT(RMS), versus mounting base temperature Tmb IT(RMS)/A 12 ITSM/A 1000 IT T 100 dIT/dt limit T2-G+ quadrant 10 10us ITSM 10 time Tj initial=25max 8 6 4 2 100us 1ms 10ms 100ms 0 0.01 0.1 1 10 30 25 20 15 10 5 T/s Fig.2.Maximum Permissible non-repetitive peak on-state Current ITSM,versus pulse width tp, for sinusoidal currents,tp20ms ITSM/A IT ITSM T time 1.6 1.4 1.2 1 0.8 0.6 10 100 1000 0.4 -50 surge duration /S Fig. 5.Maximum permissible repetitive rms on-state current lT(RMS),versus surge duration,for sinusoidal currents,f=50HZ;Tmb107 VGT(Tj) VGT(25) Tj initial=25max 0 0 0 0 50 50 100 100 150 150 Number of cycles at 50Hz Fig3.Maximum Permissible non-repetitive peak on-state current ITSM,versus number of cycles,for sinusoidal currents,f=50HZ. Tj/ Fig.6. Normalised gate trigger voltage VGT(Tj)/VGT(25),versus junction temperature Tj. UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R401-009,C UTC UT136E TRIAC 3 2.5 2 1.5 1 0.5 IGT(Tj) IGT(25) T2+G+ T2+GT2-GT2-G+ IT/A 12 10 8 6 4 2 0 50 Tj/ 100 150 0 0 0.5 1 1.5 VT/V 2 2.5 3 Tj=125 Tj=25 max typ Vo=1.27V Rs=0.091Ohms 0 -50 Fig. 7.Normalised gate trigger Current IGT(Tj)/IGT(25),versus junction temperature Tj. IL(Tj) IL(25) Fig.10.Typical and maximum on-state characteristic. 3 2.5 2 1.5 1 0.5 10 unidirectional bidirectional 1 0.1 PD tp t 0 -50 0 50 Tj/ 100 150 0.01 10us 0.1ms 1ms 10ms tp/s 0.1s 1s 10s 3 2.5 2 1.5 1 0.5 Fig.8.Normalised latching Current IL(Tj)/IL(25), versus junction temperature Tj IH(Tj) IH(25) Fig.11.Transient thermal impedance Zthj-mb,versus pulse width tp. 1000 dVD/dt(V/us) 10 0 -50 0 50 Tj/ 100 150 1 0 50 Tj/C 100 150 Fig. 9.Normalised holding current IH(Tj)/IH(25), versus junction temperature Tj. Fig.12.Typical,critical rate of rise of off-satate voltage,dVD/dt versus junction temperature Tj UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R401-009,C UTC UT136E TRIAC UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R401-009,C |
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