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| 2SK3387 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-F-MOSV) 2SK3387 Switching Regulator, DC-DC Converter and Motor Drive Applications Unit: mm * * * * * 4 V gate drive Low drain-source ON resistance: RDS (ON) = 0.08 (typ.) High forward transfer admittance: iYfsi = 17 S (typ.) Low leakage current: IDSS = 100 A (VDS = 150 V) Enhancement-mode: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 150 150 20 18 54 100 176 18 10 150 -55~150 Unit V V V A W mJ A mJ C C Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-97 2-9F1B Weight: 0.74 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.25 Unit C/W Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into S2 pin. 4 Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 50 V, Tch = 25C (initial), L = 800 mH, RG = 25 W, IAR = 18 A Note 3: Repetitive rating: pulse width limited by max junction temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2 3 1 2002-07-22 2SK3387 Electrical Characteristics (Note 4) (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD ~ 120 V, VGS = 10 V, ID = 18 A Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) iYfsi Ciss Crss Coss tr ton 10 V VGS1 0V 4.7 9 G S1 ID = 9 A VOUT D RL = 11 W S2 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 150 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 9 A VGS = 10 V, ID = 9 A VDS = 10 V, ID = 9 A Min 3/4 3/4 150 0.8 3/4 3/4 10 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 0.09 0.08 17 1380 200 610 12 20 12 68 57 43 14 Max 10 100 3/4 2.0 0.18 0.12 3/4 3/4 3/4 pF Unit mA mA V V W S 3/4 3/4 3/4 3/4 VDD ~ 100 V 3/4 3/4 3/4 3/4 3/4 3/4 3/4 ns 3/4 3/4 3/4 3/4 3/4 nC nC nC Duty < 1%, tw = 10 ms = Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin. (However, while switching times are measured, please don't connect and ground it.) Source-Drain Diode Ratings and Characteristics (Note 5) (Ta = 25C) Characteristics Continuous drain reverse current Pulse drain reverse current Continuous drain reverse current Pulse drain reverse current Diode forward voltage Reverse recovery time Reverse recovery charge (Note 1, 5) (Note 1, 5) (Note 1, 5) (Note 1, 5) Symbol IDR1 IDRP1 IDR2 IDRP2 VDS2F trr Qrr Test Condition 3/4 3/4 3/4 3/4 IDR1 = 18 A, VGS = 0 V IDR = 18 A, VGS = 0 V, dIDR/dt = 100 A/ms Min 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 185 1.3 Max 18 54 1 4 -1.7 3/4 3/4 Unit A A A A V ns mC Note 5: drain, flowing current value between the S2 pin, open the S1 pin drain, flowing current value between the S1 pin, open the S2 pin Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin. Marking Lot Number K3387 Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-07-22 2SK3387 ID - VDS 20 8 16 10 6 4 3.8 Common source Tc = 25C Pulse test 3.5 12 3.2 8 VGS = 3 V 4 50 Common source Tc = 25C Pulse test 8 ID - VDS 10 6 5 4.5 40 (A) ID ID (A) 30 4 Drain current Drain current 20 3.5 10 3 VGS = 2.5 V 0 0 1 2 3 4 5 0 0 2 4 6 8 10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 30 Common source 4 VDS - VGS Common source Tc = 25C Pulse test 3 (A) 20 ID Drain-source voltage Drain current VDS Pulse test (V) VDS = 10 V 2 ID = 18 A Tc = -55C 10 25 100 1 9 3 0 0 1 2 3 4 5 0 0 2 4 6 8 10 12 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID (S) 50 30 Common source VDS = 10 V Pulse test 1000 Tc = -55C 500 300 Common source Tc = 25C Pulse test RDS (ON) - ID iYfsi Forward transfer admittance 100 10 Drain-source on resistance RDS (ON) (mW) 25 100 50 30 4 VGS = 10 V 5 3 1 1 3 5 10 30 50 100 10 0.1 0.3 0.5 1 3 5 10 30 50 Drain current ID (A) Drain current ID (A) 3 2002-07-22 2SK3387 RDS (ON) - Tc 200 Common source 160 ID = 18 A 9 120 4.5 Pulse test 100 Common source 50 30 Tc = 25C Pulse test IDR - VDS Drain-source on resistance RDS (ON) (mW) Drain reverse current IDR (A) 10 10 5 3 3 5 1 VGS = 0, -1 V 80 40 VGS = 10 V 0 -80 -40 0 40 80 120 160 1 0 -0.4 -0.8 -1.2 -1.6 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 5000 3000 Ciss 4 Common source VDS = 10 V 3 ID = 1 mA Pulse test Vth - Tc (pF) 1000 500 300 Coss Gate threshold voltage Vth (V) Capacitance C 2 100 Common source 50 VGS = 0 V 30 f = 1 MHz Tc = 25C Pulse test 10 0.1 0.3 0.5 1 3 5 10 Crss 1 30 50 100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 150 160 Dynamic input/output characteristics 16 (W) (V) PD VDS 100 30 VDS 80 60 VDD = 120 V Common source ID = 18 A Tc = 25C Pulse test Drain power dissipation Drain-source voltage 8 50 40 VGS 4 0 0 40 80 120 160 0 0 20 40 60 0 Case temperature Tc (C) Total gate charge Qg (nC) 4 2002-07-22 Gate-source voltage VGS 120 12 (V) 2SK3387 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 0.5 0.2 PDM 0.1 0.1 0.05 0.02 0.01 0.01 0.00001 0.0001 0.001 0.01 0.1 Single pulse t T Duty = t/T Rth (ch-c) = 1.25C/W 1 10 Pulse width tw (S) Safe operating area 100 ID max (pulsed) * 50 200 EAS - Tch (mJ) Avalanche energy EAS 30 ID max (continuous) * 100 ms * 1 ms * 160 (A) 10 5 3 DC operation Tc = 25C 120 ID 80 Drain current 40 1 0.5 0.3 * Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.1 1 3 10 30 VDSS max 100 300 0 25 50 75 100 125 150 Channel temperature (initial) Tch (C) Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD VDS Test circuit RG = 25 W VDD = 50 V, L = 0.8 mH AS = Wave form ae o 1 B VDSS / x L x I2 x c cB 2 - VDD / e VDSS o 5 2002-07-22 2SK3387 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-07-22 |
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