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| BF 799W NPN Silicon RF Transistor * For linear broadband amplifier applications up to 500MHz * SAW filter driver in TV tuners Type BF 799W Marking Ordering Code LKs Q62702-F1571 Pin Configuration 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 20 30 30 3 35 10 mW 280 150 - 65 ... - 150 155 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj Tstg RthJS TS 107 C Junction temperature Storage temperature Thermal Resistance Junction - soldering point K/W Semiconductor Group 1 Nov-28-1996 BF 799W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 20 95 100 0.15 - V IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 30 IC = 10 A, IE = 0 Base-emitter breakdown voltage V(BR)EBO 3 IE = 10 A, IC = 0 Collector-base cutoff current ICBO 100 nA 35 40 250 V 0.5 0.95 VCB = 20 V, IE = 0 DC current gain hFE IC = 5 mA, VCE = 10 V IC = 20 mA, VCE = 10 V Collector-emitter saturation voltage VCEsat VBEsat - IC = 20 mA, IB = 2 mA Base-emitter saturation voltage IC = 20 mA, IB = 2 mA Semiconductor Group 2 Nov-28-1996 BF 799W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 800 1100 0.7 0.28 0.96 - MHz IC = 5 mA, VCE = 10 V, f = 100 MHz IC = 20 mA, VCE = 8 V, f = 100 MHz Collector-base capacitance Ccb - pF VCB = 10 V, VBE = vbe = 0 , f = 1 MHz Collector-emitter capacitance Cce - VCE = 10 V, VBE = vbe = 0 , f = 1 MHz Output capacitance Cob - VCB = 10 V, IE = 0 mA, f = 1 MHz Noise figure F 3 60 - dB IC = 5 mA, VCE = 10 V, f = 100 MHz ZS = 50 Output conductance g22e - S IC = 20 mA, VCE = 10 V, f = 35 MHz Semiconductor Group 3 Nov-28-1996 BF 799W Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 300 mW 260 Ptot 240 220 200 180 160 140 120 100 80 60 40 20 0 0 TS TA 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 2 K/W RthJS 10 2 Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 4 Nov-28-1996 BF 799W Transition frequency fT = f (IC) f = 100MHz VCE = Parameter Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Semiconductor Group 5 Nov-28-1996 |
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