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MITSUBISHI Nch POWER MOSFET
FY8ACH-02A
HIGH-SPEED SWITCHING USE
FY8ACH-02A
OUTLINE DRAWING

Dimensions in mm
6.0 4.4
5.0
1.8 MAX.
0.4 1.27
SOURCE GATE DRAIN

q 2.5V DRIVE q VDSS .................................................................................. 20V q rDS (ON) (MAX) ............................................................. 22m q ID ........................................................................................... 8A
SOP-8
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 20 10 8 56 8 1.7 6.8 1.8 -55 ~ +150 -55 ~ +150 0.07
Unit V V A A A A A W C C g Sep.1998
L = 10H
MITSUBISHI Nch POWER MOSFET
FY8ACH-02A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage
(Tch = 25C)
Test conditions ID = 1mA, VGS = 0V VGS = 10V, VDS = 0V VDS = 20V, VGS = 0V ID = 1mA, VDS = 10V ID = 8A, VGS = 4V ID = 4A, VGS = 2.5V ID = 8A, VGS = 4V ID = 8A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 20 -- -- 0.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 0.9 17 23 0.140 22 1700 510 360 26 85 190 180 0.75 -- 100 Max. -- 0.1 0.1 1.3 22 36 0.176 -- -- -- -- -- -- -- -- 1.1 69.4 --
Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns
Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 10V, ID = 4A, VGS = 4V, RGEN = RGS = 50
IS = 1.7A, VGS = 0V Channel to ambient IS = 1.7A, dis/dt = -50A/s
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 2.0 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA
7 5 3 2 tw = 10s 100s 1ms
1.6
101
7 5 3 2
1.2
10ms
0.8
100
7 5 3 2 7 TC = 25C DC 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 100ms
0.4
0
10-1 Single Pulse 0 50 100 150 200
CASE TEMPERATURE TC (C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) 50
VGS = 5V 4V 3V TC = 25C Pulse Test 2.5V
OUTPUT CHARACTERISTICS (TYPICAL) 20
2V TC = 25C Pulse Test VGS = 5V 4V 3V 2.5V
DRAIN CURRENT ID (A)
40
DRAIN CURRENT ID (A)
16
30
2V
12
20
8
1.5V
10
1.5V PD = 1.8W
4
PD = 1.8W
0
0
0.4
0.8
1.2
1.6
2.0
0
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998
MITSUBISHI Nch POWER MOSFET
FY8ACH-02A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
TC = 25C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 40
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m)
TC = 25C Pulse Test
1.6
32
VGS = 2.5V
1.2
24
4V
0.8
ID = 16A 8A 4A
16
0.4
8 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
1.0
2.0
3.0
4.0
5.0
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 50
TC = 25C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102
VDS = 10V 7 Pulse Test 5 4 3 2 TC = 25C 75C 125C
DRAIN CURRENT ID (A)
30
FORWARD TRANSFER ADMITTANCE yfs (S)
40
101
7 5 4 3 2
20
10
0
0
1.0
2.0
3.0
4.0
5.0
100 0 10
2
3 4 5 7 101
2
3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104
7 5 4 3 2 Ciss
SWITCHING CHARACTERISTICS (TYPICAL) 102
TCh = 25C 7 VDD = 10V 5 VGS = 4V 4 RGEN = RGS = 50 3 td(off) 2 tf tr
103
7 5 4 3 2 TCh = 25C f = 1MHZ VGS = 0V 2 3 4 5 7 100 2 3 4 5 7 101 Coss
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
101
7 5 4 3 2
Crss
td(on)
102 -1 10
100 -1 10
2
3 4 5 7 100
2
3 4 5 7 101
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A) Sep.1998
MITSUBISHI Nch POWER MOSFET
FY8ACH-02A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 50
SOURCE CURRENT IS (A)
VGS = 0V Pulse Test
5.0
TCh = 25C ID = 8A VDS = 7V 10V 15V
4.0
40
3.0
30
2.0
20
TCh = 125C 75C 25C
1.0
10
0
0
8
16
24
32
40
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101
VGS = 4V 7 ID = 8A 5 Pulse Test 3 2
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 2.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
VDS = 10V ID = 1mA
1.6
1.2
100
7 5 3 2
0.8
0.4
10-1
-50
0
50
100
150
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
TRANSIENT THERMAL IMPEDANCE Zth (ch - a) (C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102
7 5 D = 1.0 3 0.5 2
1.2
101 0.2
7 5 0.1 3 2 PDM
tw
1.0
0.8
100
7 5 3 2 0.05 0.02 0.01 Single Pulse
T D= tw T
0.6
0.4
-50
0
50
100
150
10-1 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 PULSE WIDTH tw (s) Sep.1998
CHANNEL TEMPERATURE Tch (C)

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