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| AO4601 Complementary Enhancement Mode Field Effect Transistor General Description The AO4601 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product AO4601 is Pb-free (meets ROHS & Sony 259 specifications). AO4601L is a Green Product ordering option. AO4601 and AO4601L are n-channel p-channel -30V VDS (V) = 30V ID = 4.7A (VGS=10V) -8A (VGS = -20V) RDS(ON) RDS(ON) < 55m (VGS=10V) < 18m (VGS = -20V) < 70m (VGS=4.5V) < 19m (VGS = -10V) < 110m (VGS = 2.5V) Features D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 S2 G1 S1 SOIC-8 n-channel p-channel Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -30 25 -8 -6.9 -50 2 1.44 -55 to 150 Units V V A VGS TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG 12 4.7 4 30 2 1.44 -55 to 150 W C Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Symbol RJA RJL RJA RJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 52 78 48 50 73 31 Max Units 62.5 C/W 110 C/W 60 C/W 62.5 110 40 C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4601 n-channel MOSFET Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=4A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=4.5V, ID=3A VGS=2.5V, ID=2A gFS VSD IS Forward Transconductance VDS=5V, ID=4A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.6 10 45 66 55 83 8 0.8 1 2.5 390 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 54.5 41 3 0.6 VGS=4.5V, VDS=15V, ID=4A 1.38 4.34 3.3 VGS=10V, VDS=15V, RL=3.75, RGEN=6 IF=4A, dI/dt=100A/s 1 21.7 2.1 12 6.3 55 80 70 110 1 Min 30 1 5 100 1.4 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 3 : Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. AO4601 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 12 9 ID (A) 2.5V 6 3 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 150 Normalized On-Resistance 125 VGS=2.5V RDS(ON) (m) 100 75 50 25 0 0 2 4 6 8 10 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 VGS=4.5V 1.8 ID(A) 10 10V 3V 4.5V 6 8 VDS=5V 4 125C VGS=2V 2 25C 0 0.5 1 1.5 2 2.5 3 3.5 0 VGS(Volts) Figure 2: Transfer Characteristics 1.6 VGS=4.5V VGS=10V 1.4 1.2 VGS=2.5V VGS=10V 1 1.0E+01 1.0E+00 150 RDS(ON) (m) ID=2A IS (A) 1.0E-01 125C 1.0E-02 1.0E-03 25C 1.0E-04 100 125C 50 25C 1.0E-05 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha and Omega Semiconductor, Ltd. AO4601 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=4A Capacitance (pF) 600 500 Ciss 400 300 200 100 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss 100.0 TJ(Max)=150C TA=25C 20 TJ(Max)=150C TA=25C 100s 1ms 10ms 10s Power (W) 100 15 10.0 ID (Amps) RDS(ON) limited 10 1.0 1s 10s DC 0.1 5 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AO4601 p-channel MOSFET Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=25V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-8A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-20V, ID=-8A VGS=-4.5V, ID=-5A gFS VSD IS Forward Transconductance VDS=-5V, ID=-8A 16 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -1.7 40 16 20.5 15 33 21 -0.75 -1 -2.6 2076 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 503 302 2 39 VGS=-10V, VDS=-15V, ID=-8A 8 11.4 12.7 VGS=-10V, VDS=-15V, RL=1.8, RGEN=3 IF=-8A, dI/dt=100A/s 7 25.2 12 32 26 19 25 18 -2.5 Min -30 -1 -5 100 -3 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 3 : Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. AO4601 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 -10V 40 30 20 10 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 30 Normalized On-Resistance 25 RDS(ON) (m) 20 15 10 5 0 0 5 10 15 20 25 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=-6V 1.4 ID=-8A 1.3 VGS=-10V 1.2 1.1 1 0.9 VGS=-4.5V -4.5V -8V -6V -5.5V -5V -ID (A) 15 -ID(A) 10 125C VGS=-4V 5 25C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 25 VDS=-5V 20 VGS=-10V 60 50 ID=-8A RDS(ON) (m) 40 30 20 25C 10 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C -IS (A) 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 25C 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 125C Alpha and Omega Semiconductor, Ltd. AO4601 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 -VGS (Volts) 6 4 2 0 0 5 10 15 20 25 30 35 40 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-15V ID=-8A Capacitance (pF) 3000 2500 2000 1500 Coss 1000 500 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Crss Ciss 100.0 TJ(Max)=150C TA=25C RDS(ON) 10.0 limited 100s 1ms 10ms 0.1s 1.0 1s 10s DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s 40 TJ(Max)=150C TA=25C 30 Power (W) -ID (Amps) 20 10 0 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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