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| PD - 94002 IRF7751 HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel VDSS -30V RDS(on) max 35m@VGS = -10V 55m@VGS = -4.5V ID -4.5A -3.8A Description HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de1 2 3 4 1= 2= 3= 4= D1 S1 S1 G1 8= 7= 6= 5= 8 7 6 5 D2 S2 S2 G2 signer with an extremely efficient and reliable device for use in battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. TSSOP-8 Absolute Maximum Ratings Parameter VDS ID @ TC = 25C ID @ TC = 70C IDM PD @TC = 25C PD @TC = 70C VGS TJ, TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -30 -4.5 -3.6 -18 1.0 0.64 0.008 20 -55 to +150 Units V A W W/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 125 Units C/W www.irf.com 1 10/04/2000 IRF7751 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. Typ. Max. Units Conditions -30 --- --- V VGS = 0V, I D = -250A --- 0.020 --- V/C Reference to 25C, ID = -1mA --- --- 35 VGS = -10V, ID = -4.5A m --- --- 55 VGS = -4.5V, I D = -3.8A -1.0 --- -2.5 V VDS = VGS, ID = -250A 6.8 --- --- S VDS = -10V, ID = -4.5A --- --- -15 VDS = -24V, VGS = 0V A --- --- -25 VDS = -24V, VGS = 0V, TJ = 70C --- --- -100 VGS = -20V nA --- --- 100 VGS = 20V --- 29 44 ID = -4.5A --- 5.5 --- nC VDS = -15V --- 5.0 --- VGS = -10V --- 13 20 VDD = -15V --- 16 24 ID = -1.0A ns --- 155 233 RG = 6.0 --- 80 120 VGS = -10V --- 1464 --- VGS = 0V --- 227 --- pF VDS = -25V --- 146 --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 23 19 -1.0 A -18 -1.2 35 28 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.0A, VGS = 0V TJ = 25C, IF = -1.0A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board, t < 10 sec. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF7751 100 VGS -10.0V -7.0V -5.5V -4.5V -4.0V -3.5V -3.0V BOTTOM -2.7V TOP 100 -ID, Drain-to-Source Current (A) 10 -ID, Drain-to-Source Current (A) 10 VGS -10.0V -7.0V -5.5V -4.5V -4.0V -3.5V -3.0V BOTTOM -2.7V TOP 1 -2.7V 0.1 -2.7V 1 20s PULSE WIDTH Tj = 25C 0.01 0.1 1 10 100 0.1 0.1 1 20s PULSE WIDTH Tj = 150C 10 100 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -4.5A -I D , Drain-to-Source Current (A) 1.5 10 TJ = 150 C TJ = 25 C 1 1.0 0.5 0.1 2.0 V DS = -15V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7751 4000 -VGS , Gate-to-Source Voltage (V) 3200 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 14 12 10 8 6 4 2 0 0 ID = -4.5A V DS =-24V V DS =-15V C, Capacitance (pF) Ciss 2400 1600 800 Coss Crss 0 1 10 100 10 20 30 40 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 TJ = 150 C -ID , Drain Current (A) I 10us 10 100us TJ = 25 C 1 1ms 1 10ms 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7751 5.0 VDS 4.0 RD VGS RG -ID , Drain Current (A) D.U.T. + 3.0 VGS 2.0 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 1.0 td(on) tr t d(off) tf VGS 0.0 25 50 75 100 125 150 10% TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms 1000 Thermal Response (Z thJA ) 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 100 1 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - VDD 5 IRF7751 RDS ( on ) , Drain-to-Source On Resistance ( ) ( RDS(on), Drain-to -Source On Resistance ) 0.100 0.200 0.080 0.150 0.060 0.100 VGS = -4.5V 0.050 ID = -4.5A 0.040 VGS = -10V 0.020 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.000 0 10 20 30 40 -ID , Drain Current ( A ) -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F QGS VG QGD VGS -3mA IG ID Current Sampling Resistors Charge Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + 10 V D.U.T. - VDS IRF7751 TSSOP-8 Package Outline www.irf.com 7 IRF7751 TSSOP-8 Tape and Reel Information 16 mm O 13" 16mm 8 mm FEED DIRECT ION NOT ES: 1. T APE & REEL OUT LINE CONFORMS TO EIA-481 & EIA-541. TSSOP-8 Part Marking EXAMPLE: T HIS IS AN IRF 7702 DATE CODE (YW) LOT CODE (XX) PART NUMBER XXYW 7702 T ABLE 1 WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ET C.) YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D DATE CODE EXAMPLES: 9503 = 5C 9532 = EF 24 25 26 X Y Z T ABLE 2 WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.) YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D 50 51 52 X Y Z IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00 8 www.irf.com |
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