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| 1T405A Variable Capacitance Diode For the availability of this product, please contact the sales office. Description The 1T405A is a variable capacitance diode designed for electronic tuning of wide-band CATV tuners using a super-small-miniature flat package (SSVC). High capacitance ratio (C25/C28) is improved to support guard band. Features * Super-small-miniature flat package * Low series resistance 0.85 Max. * Large capacitance ratio 12.5 Typ. 1.03 Min. * Small leakage current 10 nA Max. * Capacitance deviation within 2 % M-290 (f=470 MHz) (C2/C25) (C25/C28) (VR=28 V) Absolute Maximum Ratings (Ta=25 C) * Reverse voltage VR 34 * Operating temperature Topr -20 to +75 * Storage temperature Tstg -65 to +150 V C C Applications Electronic tuning of VHF band and wide-band CATV tuners Structure Silicon epitaxial planar type diode Electrical Characteristics Item Reverse current Reverse voltage Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group Symbol IR VR C2 C25 C2/C25 C25/C28 rs C Conditions VR=28 V IR=1 A VR=2 V, f=1 MHz VR=25 V, f=1 MHz Min. 34 32.96 2.53 12.0 1.03 Typ. Max. 10 38.96 2.96 12.5 0.85 2 (Ta=25 C) Unit nA V pF pF CD=14 pF, f=470 MHz VR=2 to 25 V, f=1 MHz % The continuous 20 pieces of C are guaranteed. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. --1-- E97109-TE 1T405A Diode capacitance vs. Reverse voltage 100 Ta=25C, f=1MHz 50 1000 Reverse current vs. Ambient temperature VR=28V C-Diode capacitance (pF) 20 5 2 1 IR-Reverse current (pA) 1 2 5 10 20 VR-Reverse voltage (V) 50 100 10 100 10 1 -20 0 20 40 60 Ta-Ambient temperature (C) 80 Reverse current vs. Reverse voltage 10000.00 1000.00 IR-Reverse current (pA) Ta=80C 100.00 Ta=60C 10.00 Ta=25C 1.00 1 10 VR-Reverse voltage (V) 100 --2-- 1T405A Forward voltage vs. Ambient temperature 0.80 IF=1mA 45 Reverse voltage vs. Ambient temperature IR=10A 0.70 VR-Reverse voltage (V) 0 20 40 60 Ta-Ambient temperature (C) 80 VF-Forward voltage (V) 35 0.60 0.50 -20 30 -20 0 20 40 60 Ta-Ambient temperature (C) 80 Diode capacitance vs. Ambient temperature 1.04 1000 f=1MHz 1.03 1.02 1.01 1.00 0.99 0.98 0.97 -20 10 1 VR=2V VR=7V VR=15V VR=25V Thermal coefficient of diode capacitance f=1MHz C (Ta) / C (25C)-Diode capacitance Thermal coefficient (ppm/C) VR=1V 100 0 20 40 60 Ta-Ambient temperature (C) 80 10 VR-Reverse voltage (V) 100 --3-- 1T405A Package Outline Unit : mm M-290 1.3 0.1 A 1.7 0.1 0.8 0.1 0.2 M A 10 MAX b c 10 MAX 0.7 0.1 BASE METAL WITH PLATING c b 0.11 0.005 0.3 0.025 + 0.11 - 0.05 0.01 + 0.05 0.3 - 0.02 PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE M-290 LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT EPOXY RESIN SOLDER PLATING COPPER 0.002g MARK 1 S5 2 1 : Cathode 2 : Anode --4-- 0.2 0.05 This datasheet has been download from: www..com Datasheets for electronics components. |
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