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| BB 811 Silicon Variable Capacitance Diode q BB 811 Frequency range up to 2 GHz; special design for use in TV-sat indoor units Type BB 811 Marking white T Ordering Code (tape and reel) Q62702-B478 Pin Configuration Package1) SOD-123 Maximum Ratings Parameter Reverse voltage Forward current, TA 60 C Operating temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA Symbol VR IF Top Tstg Values 30 20 - 55 ... + 150 Unit V mA - 55 ... + 125 C 450 K/W 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BB 811 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Reverse current VR = 30 V VR = 30 V, TA = 85 C Diode capacitance, f = 1 MHz VR = 1 V VR = 28 V Capacitance ratio f = 1 MHz, VR = 1 V/28 V Series resistance f = 100 MHz, CT = 9 pF Case capacitance f = 1 MHz Capacitance matching f = 1 MHz, VR = 0.5 ... 28 V Series inductance Symbol min. IR - - CT 7.8 0.85 CT1 CT28 rS CC CT Values typ. - - 8.8 1.02 8.6 1 0.1 - 2.8 max. Unit nA 20 500 pF 9.8 1.2 9.5 - - 3 - - pF % nH 7.8 - - - - C T LS Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 2 |
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