|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
PD- 93759B IRLMS4502 HEXFET(R) Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D 1 6 A D VDSS = -12V D 2 5 D G 3 4 S RDS(on) = 0.042 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. Micro6a Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. -12 -5.5 -4.4 -44 1.7 1.1 0.013 28 12 -55 to + 150 Units V A W W/C mJ V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 75 Units C/W www.irf.com 1 01/13/03 IRLMS4502 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -12 --- --- --- -0.60 8.8 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = -250A -0.003 --- V/C Reference to 25C, I D = -1mA --- 0.042 VGS = -4.5V, ID = -5.5A --- 0.075 VGS = -2.5V, ID = -4.7A --- --- V VDS = V GS, ID = -250A --- --- S VDS = -10V, ID = -5.5A --- -1.0 VDS = -12V, VGS = 0V A --- -25 VDS = -9.6V, VGS = 0V, T J = 125C --- -100 VGS = -12V nA --- 100 VGS = 12V 22 33 ID = -5.5A 3.9 5.8 nC VDS = -10V 11 16 VGS = -5.0V 18 --- VDD = -6.0V 460 --- ID = -1.0A ns 130 --- RG = 4.5 250 --- RD = 6.0 1820 --- VGS = 0V 1110 --- pF VDS = -10V 1070 --- = 1.0kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- 31 21 -1.7 -44 -1.2 46 32 V ns nC A Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.7A, VGS = 0V TJ = 25C, I F = -5.5A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Surface mounted on FR-4 board, t 5sec. Starting TJ = 25C, L = 1.8mH RG = 25, IAS = -5.5A. (See Figure 12) Pulse width 400s; duty cycle 2%. 2 www.irf.com IRLMS4502 1000 VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP 100 -I D , Drain-to-Source Current (A) 100 -I D , Drain-to-Source Current (A) VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP 10 -2.25V 10 -2.25V 1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -5.5A -I D , Drain-to-Source Current (A) 1.5 100 1.0 TJ = 25 C TJ = 150 C 0.5 10 2.0 V DS = -15V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLMS4502 2600 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + C ds gd 15 ID = -5.5A VDS =-10V -VGS , Gate-to-Source Voltage (V) 2200 12 C, Capacitance(pF) Ciss 1800 9 6 1400 Coss Crss 1000 1 10 100 3 0 0 10 20 30 40 -V DS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10us 10 TJ = 150 C -ID , Drain Current (A) I 10 100us TJ = 25 C 1 1ms 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLMS4502 6.0 80 EAS , Single Pulse Avalanche Energy (mJ) 5.0 ID -2.5A -4.4A BOTTOM -5.5A TOP -ID , Drain Current (A) 60 4.0 3.0 40 2.0 20 1.0 0.0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC , Case Temperature ( C) Starting TJ , Junction Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 Thermal Response (Z thJA ) 0.1 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRLMS4502 Micro6 Package Outline 3.00 (.118 ) 2.80 (.111 ) LEAD ASSIGNMENTS -BD D S RECOMMENDED FOOTPRINT 2X 0.95 (.0375 ) 6X (1.06 (.042 ) 1.75 (.068 ) 1.50 (.060 ) -A- 6 1 5 2 4 3.00 (.118 ) 2.60 (.103 ) 3 6 1 5 2 4 3 2.20 (.087 ) 0.95 ( .0375 ) 2X 6X D 0.50 (.019 ) 0.35 (.014 ) D G 6X 0.65 (.025 ) 0.15 (.006 ) M C A S B S 0 -10 1.30 (.051 ) 0.90 (.036 ) -C0.15 (.006 ) MAX. 1.45 (.057 ) 0.90 (.036 ) 0.10 (.004 ) 6 SURFACES O O 6X 0.20 (.007 ) 0.09 (.004 ) 0.60 (.023 ) 0.10 (.004 ) NOTES : 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : MILLIMETER. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). Micro6 Tape & Reel Information 8mm 4mm FEED DIRECTION NOTES : 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 6 www.irf.com IRLMS4502 Micro6 Part Marking Information Notes: This part marking information applies to devices produced before 02/26/2001 EXAMPLE: THIS IS AN IRLMS6702 WW = (1-26) IF PRECEDED BY L AST DIGIT OF CALENDAR YEAR YEAR PART NUMBER DATE CODE TOP 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D WAFER LOT NUMBER CODE 24 25 26 X Y Z BOT TOM PART NUMBER CODE REFERENCE: 2A = 2B = 2C = 2D = 2E = 2F = 2G = 2H = IRLMS 1902 IRLMS 1503 IRLMS 6702 IRLMS 5703 IRLMS 6802 IRLMS 4502 IRLMS 2002 IRLMS 6803 WW = (27-52) IF PRECEDED BY A LETT ER YEAR 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D DAT E CODE EXAMPLES: YWW = 9603 = 6C YWW = 9632 = FF 50 51 X Y Notes: This part marking information applies to devices produced after 02/26/2001 W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR PART NUMBER Y = YEAR W = WEEK 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D TOP LOT CODE PART NUMBER CODE REFERENCE: A= B= C= D= E= F= G= H= IRLMS 1902 IRLMS 1503 IRLMS 6702 IRLMS 5703 IRLMS 6802 IRLMS 4502 IRLMS 2002 IRLMS 6803 24 25 26 X Y Z W = (27-52) IF PRECEDED BY A L ET TER YEAR 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D 50 51 52 X Y Z This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/03 www.irf.com 7 |
Price & Availability of IRLMS4502 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |