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MegaMOSTMFET IXTH 20N60 IXTM 20N60 VDSS = 600 V = 20 A ID25 RDS(on) = 0.35 N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C 15N60 20N60 15N60 20N60 Maximum Ratings 600 600 20 30 15 20 60 80 300 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C TO-247 AD (IXTH) D (TAB) TO-204 AE (IXTM) D G = Gate, S = Source, G D = Drain, TAB = Drain Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions IGSS IDSS R DS(on) VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V TJ = 25C TJ = 125C 100 200 1 0.35 nA A mA l l Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density l VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved l VGS(th) 2 4.5 V l VDS = VGS, ID = 250 A l VDSS VGS = 0 V, ID = 250 A 600 V l Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Applications Switch-mode and resonant-mode power supplies Motor control Uninterruptible Power Supplies (UPS) DC choppers l l l l 91537E(5/96) 1-4 IXTH 20N60 IXTM 20N60 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 11 18 4500 VGS = 0 V, VDS = 25 V, f = 1 MHz 420 140 20 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 , (External) 43 70 40 150 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 29 60 40 60 90 60 170 40 85 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD (IXTH) Outline gfs C iss C oss C rss t d(on) tr td(off) tf Q g(on) Q gs Q gd R thJC R thCK VDS = 10 V; ID = 0.5 * ID25, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Repetitive; Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 80 1.5 600 A A Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-204AE (IXTM) Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V V ns Pins 1 - Gate 2 - Source Case - Drain Dim. A A1 b D e e1 Millimeter Min. Max. 6.4 11.4 1.53 3.42 1.45 1.60 22.22 10.67 11.17 5.21 5.71 Inches Min. Max. .250 .450 .060 .135 .057 .063 .875 .420 .440 .205 .225 .440 .151 .151 1.187 .495 .131 .655 .480 .165 .165 BSC .525 .188 .675 L 11.18 12.19 p 3.84 4.19 p 1 3.84 4.19 q 30.15 BSC R 12.58 13.33 R1 3.33 4.77 s 16.64 17.14 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXTH 20N60 IXTM 20N60 Fig. 1 Output Characteristics TJ = 25C VGS = 10V Fig. 2 Input Admittance 40 40 6V 30 ID - Amperes ID - Amperes 30 TJ = 25C 20 20 5V 10 10 0 0 0 5 10 15 20 0 1 2 3 4 5 6 7 8 9 10 VDS - Volts VGS - Volts Fig. 3 RDS(on) vs. Drain Current 1.40 1.35 1.30 1.25 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0 5 10 15 20 25 30 35 40 VGS = 15V VGS = 10V TJ = 25C Fig. 4 Temperature Dependence of Drain to Source Resistance 2.50 2.25 RDS(on) - Normalized RDS(on) - Normalized 2.00 1.75 1.50 1.25 1.00 0.75 0.50 -50 -25 0 25 50 75 100 125 150 ID = 10A ID - Amperes TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature 35 30 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 VGS(th) 1.1 BVDSS BV/VG(th) - Normalized 25 50 75 100 125 150 25 ID - Amperes 1.0 0.9 0.8 0.7 0.6 20 15 10 5 0 -50 20N60 15N60 -25 0 0.5 -50 -25 0 25 50 75 100 125 150 TC - Degrees C TJ - Degrees C (c) 2000 IXYS All rights reserved 3-4 IXTH 20N60 IXTM 20N60 Fig.7 Gate Charge Characteristic Curve 10 9 8 7 VDS = 300V ID = 20A IG = 10mA Fig.8 Forward Bias Safe Operating Area 100 10s Limited by RDS(on) 100s 1ms 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 ID - Amperes VGE - Volts 10 10ms 1 100ms 0.1 1 10 100 600 Gate Charge - nCoulombs VDS - Volts Fig.9 Capacitance Curves 4500 4000 Ciss Fig.10 Source Current vs. Source to Drain Voltage 80 70 60 Capacitance - pF 3500 ID - Amperes 3000 2500 2000 1500 1000 500 0 0 5 f = 1 MHz VDS = 25V 50 40 30 TJ = 25C TJ = 125C 20 Coss Crss 10 10 15 20 25 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 VCE - Volts VSD - Volts Fig.11 Transient Thermal Impedance 1 Thermal Response - K/W D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2000 IXYS All rights reserved 4-4 This datasheet has been download from: www..com Datasheets for electronics components. |
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