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U3500BM
Cordless Telephone Signal Processor
Description
The programmable cordless phone signal processor includes all necessary low frequency parts such as microphone- and earphone amplifier, compander, preemphasis, deemphasis, scrambler, data management, power-supply management, as well as RF receiving parts such as IF converter, FM demodulator. RSSI and low noise amplifier. Several gains and mutes in transmit and receive direction are controlled by serial bus while compander, pre- and deemphasis and scrambler can be bypassed.
Features
RF Receiver Part
D Compander D Pre- and deemphasis D Scrambler D Data management D Power-supply management D Serial bus
Application: CT0
D D D D
Low-noise amplifier IF converter FM demodulator RSSI
Low Frequency Part
D Symmetrical input of microphone amplifier D Symmetrical output of earpiece amplifier
Block Diagram
MIXO IFIN1 IFIN2 DACO
IFAMP MIXIN MIXGND Scrambler frequency LOIN Oscillator 11.15 MHz Divider RECO2 D/A LNAIN RGND LNAO VBATT MIC LNA LPF REC RECO1 MIC1 MIC2 MICO RXDAT Battery low detector C D Serial Bus LPF LPF TGAIN ADJ.2 Limiter Preem TGAIN ADJ.1 Compressor COIN TXDAT ETC Expander EXIN LOG Demodulator RGAIN ADJ LPF LPF Deem RXO
Scrambler frequency
VCC
TXO
GND
CTC
14678
Figure 1. Block diagram
Rev. A3, 20-May-98
1 (17)
Preliminary Information
U3500BM
Pin Description
TXO CTC COIN MICO MIC2 MIC1 GND RXO RECO2 1 2 3 4 5 6 7 8 9 28 TXDAT 27 RXDAT 26 D 25 C 6 24 DACO 23 VCC 22 LOIN 21 VBATT 20 LNAO 19 RGND 18 LNAIN 17 MIXGND 16 MIXIN 15 MIXO
96 11791
Pin 1 2 3 4 5
7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
RECO1 10 EXIN ETC 11 12
IFIN2 13 IFIN1 14
Figure 2. Pinning
24 25 26 27 28
Function Transmit section analog output Compressor time constant control analog output COIN Compressor analog input MICO Microphone amplifier output MIC2 Non-inverting input of microphone amplifier MIC1 Inverting input of microphone amplifier GND LF analog/ digital ground RXO Intermediate receive analog output RECO2 Symmetrical output of receive amplifier RECO1 Symmetrical output of receive amplifier EMN Expander analog input ETC Expander time constant control analog output IFIN2 Symmetrical IF amplifier input IFIN1 Symmetrical IF amplifier input MIXO Mixer output MIXIN Mixer input MIXGND IF amplifier and mixer ground LNAIN Low-noise amplifier input RGND Low-noise amplifier ground LNAO Low-noise amplifier output/ External LO input VBATT Battery supply LOIN Local oscillator input (11.15 MHz) VCC Supply-voltage output for peripherals and internal supply of digital part DACO D/A comparator output C Clock input of serial bus D Data input of serial bus RXDAT Receive data digital output TXDAT Transmit data input
Symbol TXO CTC
Order Information
Extended Type Number U3500BM-BFL U3500BM-BFLG3 Package SO28 SO28 Remarks Taped and reeled
2 (17)
Rev. A3, 20-May-98
Preliminary Information
U3500BM
Absolute Maximum Ratings
Parameters Supply voltage Junction temperature Ambient temperature Storage temperature Power dissipation Tamb = 60C Symbol VBatt, VCC Tj Tamb Tstg Ptot Value 5.5 +125 -25 to +75 -50 to +125 1 Unit V C C C W
Thermal Resistance
Junction ambient Parameters SO28 Symbol RthJA Value 120 Unit K/W
Electrical Characteristics
Test conditions (unless otherwise specified): VBatt = VCC = 3.6 V, Tamb = +25C Parameters Test Conditions / Pins Symbol Current consumption ERX2 ELNA ERXHF ERX1 ERXO EEA 0 0 0 0 0 0 Operating voltage range Inactive mode VBatt = 2.9 V Standby mode RX waiting for RSSI ELNA = ERXHF = 1 RX waiting for data ELNA = ERXHF = ERX1 = 1 Operating current, RX and ERX2 = ELNA = ERXHF = TX completely active ERX1 = ERXO = EEA= EDEE = GDEM = ETX = 1 Low noise amplifier (LNA) f = 41.4 MHz, input level = -50 dBm Supply current Input impedance Output impedance Gain f = 50 MHz Noise figure Bandwidth = 1 MHz 1-dB input compression point Third-order input intercept f = 41.4 MHz point f = 41.4125 MHz Input level = -60 dBm Frequency range FRF Min. Typ. Max. ETX 0 5.2 80 120 3.4 2.45 9.5 Unit Fig.
EDEE 0 3.1 3.6 30 60 100 1.7 2.5 1.45 1.9 4.5 6.5
EPREE 0
mA mA
mA mA mA
V
0.8 160 40 20 -27 -15
1 200 80 23 4 -24 -12
1.2 240 120 26 5
mA
W W
dB dB dBm dBm
3 3 3 3 3 3 3
20
50
MHz
3
Rev. A3, 20-May-98
3 (17)
Preliminary Information
U3500BM
Parameters Receiver IF mixer, f = 10.7 MHz Input resistance Input capacitance Output impedance Gain GVMIX Input compression point Third-order input intercept point Carrier breakthrough from internal LO (11.15 MHz) to IF output Carrier breakthrough from internal LO (11.15 MHz) to RF input IF amplifier: RSSI Input resistance RSSI-sensitivity Test Conditions / Pins Symbol Min. Typ. Max. Unit Fig. 2000 2.5 1200 13 -17 -9 3000 3 1500 15 4000 3.5 1800 17
W
pF
W
Input level 7 mVrms
GMIX
dB dBm dBm
4 4 4 4 4 4 4
300
mVrms mVrms
kW
10
4
VIF = 0 mVrms starting from 0 increase RSSIlevel until mean of sampled signal at DACO is 0.2 RSSI-level = CON0
1.6
2
2.5
5
v
VIF = 25.4 mVrms, f = 450 kHz increase RSSI level again until mean of sampled signal at DACO is RSSI-level = CON1 RSSI-sensitivity = CON1-CON0 1
5
v0.2.
RSSI-input voltage dynamic range RSSI-level number of programmable steps *) RSSI-level step size in the logarithmic region
60
65 127
dB
5 5
0.35
0.46
0.6
dB
5
*) RSSI Level Programming (Typical Values)
Input Voltage VIF (mVrms) 0 25.4 42.4 424 4240 42400 RSSI Level (Decimal) 5 8 14 54 97 111
4 (17)
Rev. A3, 20-May-98
Preliminary Information
U3500BM
Parameters RF demodulator BSCR EDEE 1 0 Recovered audio Test Conditions / Pins Symbol Min. Typ. fIF = 450 kHz, fMOD = 1 kHz, VIF = 500 mVrms GRX0 GRX1 GRX2 GRX3 ERX1 1 1 1 0 1 GDEM = 0, DfFM = 2.5 kHz 0.4 0.8 GDEM = 1, DfFM = 5.0 kHz 0.4 0.8 Recovered audio output VBatt = 3.1 to 5.2 V -1 voltage drop AM rejection ratio 30% AM 30 35 RX audio Change of RX0 signal EDEE = 0 -0.5 0 deemphasis bypass Gain adjust range 12 15 Gain adjust step 0.8 1 Output signal vs. frequency 100 Hz -7.5 -6.5 relative to 1 kHz (0 dB) 300 Hz -2.0 -1.0 deemphasis bypassed 1800 Hz -1.3 -0.3 3200 Hz -0.8 0.2 4100 Hz Output signal vs. frequency 100 Hz -0.7 0.3 relative to 1 kHz (0 dB) 300 Hz 3.7 4.7 deemphasis enable 1800 Hz -5.7 -4.7 EDEE = 1 3200 Hz -10 -9.0 4100 Hz Total harmonic distortion DFM = 250 Hz DFM = 2.50 kHz Audio mute DFM = 2.5 kHz, ERXO = 0 65 ERX1 = 0, ERX2 = 0 Output impedance Expander EEA GEA0 GEA1 GEA2 GEA3 1 0 0 0 1 Gain reference level VEXIN = -10 dBVrms GOREC 11 13 Change of gain when BCOMP = 1 -0.5 expander is bypassed Gain tracking VEXIN = -20 dBVrms -21 -41 VEXIN = -30 dBVrms -53 VEXIN = -35 dBVrms -50 VEXIN = -40 dBVrms -60 Input impedance 9.5 Gain change vs. supply VBatt = 3.1 to 5.2 V -0.5 voltage Attack time VEXIN = step tf 16 -20 dBVrms -14 dBVrms, measure time after step, when output voltage has 0.75 times the final value Release time VEXIN = step tf 16 14 dBVrms -20 dBVrms, measure time after step, when output voltage has 1.5 times of the final value Max. ERXO
1
Unit
Fig. ERX2
1
1.6 1.6 +1
Vpp Vpp dB dB
6 6 6 6 6 6
0.5 17 1.2 -5.5 0 0.7 1.2 -60 1.3 5.7 -3.7 -8.0 -66 3.5 3.5
dB dB dB
dB
6
dB
6
% % dB
6 6
100 GEA4 1 15 0.5 -19 -39 -47 14.5 0.5
W
dB dB 7 7
dB
7 7 7
kW dB ms
7
ms 7
Rev. A3, 20-May-98
5 (17)
Preliminary Information
U3500BM
Parameters Test Conditions / Pins Symbol Earpiece amplifier BCOMP = 1, EEA = 1, VEXIN = 100 mVrms Medium gain GEA0 GEA1 GEA2 GEA3 0 0 0 0 GEA4 = 1 Minimum gain GEA0 GEA1 GEA2 GEA3 0 0 0 0 GEA4 = 0 Gain change versus VS VBatt = 3.1 to 5.2 V Gain adjust range Gain adjust step Output impedance Distortion dt Output offset voltage VEXIN = 0 mVrms Output voltage swing Increase VEXIN until distortion (RECO1/ RECO2) is 5% Maximum gain GEA0 GEA1 GEA2 GEA3 1 1 1 1 GEA4 = 1 Low Frequency Transmitter GMIC EPREE BSCR GlTX G2TX BCOMP 1 1 1 1000 1000 1 Microphone Amplifier VMIC = 10 mVrms, fIN = 1 kHz Gain High gain: GMIC = 1 Low gain: GMIC = 0 Gain change versus VS VBatt = 3.1 to 5.2 V Differential input impedance Output impedance Distortion VMIC = 10 mVrms dt Output noise VMIC = 0 Vrms high gain (psophmetrically weighted) (inputs closed across 200 W) TX Audio VCOIN = -20 dBVrms Gain GTX (COIN, TXO) Change of gain TXO EPREE = 0 Gain between 3.2 and 5.2 V TX gain adjust range adj. 1 TX gain adjust step adj. 1 LIM gain adjust range adj. 2 LIM gain adjust range adj. 2 TX gain vs. frequency 100 Hz (preemphasis bypassed) 300 Hz relative to 1 kHz reference 1800 Hz level 0 dB 3200 Hz 4100 Hz Gain vs. frequency with 100 Hz preemphasis relative to 1 kHz 300 Hz reference level 0 dB 1800 Hz 3200 Hz 4100 Hz Total band ripple VBatt = 3.1 to 5.2 V VCOIN = -20 dBV Min. 4 Typ. 5 Max. 6 Unit dB 7 -12 -11 -10 dB 7 -0.2 0.8 31 1 10 0.2 1.2 30 2 200 dB dB dB 7 7 7 7 7 7 7 7 Fig.
W
-200 4.8 19
5.0 20 21
% mV Vpp dB
ETX 1 31 23 -0.2 41 32 24 0 75 10 33 25 0.2 103 35 1 50 dB dB dB kW 8 8 8 8 8 8 9 9 9 9 9 9 9
W
mVrmsp
dB dB dB dB dB dB dB
%
2.5 -0.5 -1 12 0.8 0.8 -1.3 -1.3 -0.8 -1.9 -25.9 -0.8 -6.8 3.3 6.0 16.6
5.5 0 0 15 1 15 1 -0.3 -0.3 0.2 0.9 -23.9 -7.0 -5.8 4.3 7.0 -14.6
8.5 0.5 +1 18 1.2 1.2 0.7 0.7 1.2 0.1 -21.9 -6.0 -4.8 5.3 8.0 -12.6 2
dB
9
dB
9
dB
9
6 (17)
Rev. A3, 20-May-98
Preliminary Information
U3500BM
Parameters Limiter Output voltage Mute Test Conditions / Pins Increase VCOIN until d = 5% at TX0 then measure VTX0 ETX = 0, VCOIN = -l0 dBV attenuation at TX0 output Symbol Min. 1.05 56 7 EIX 1 G0TX GlTX0 0 9 1 0.5 -11 -21 -22 tf -30 3.5 10 14 Typ. Max. 2.0 Unit Vpp dB kW Fig. 9 9 9
Output impedance TXO Compressor BSCR EPREE G2TX0 G2TX1 G2TX2 G2TX3 1 0 0 1 0 1 Input impedance BCOMP = 1 Gain reference level G0TX VCOIN = -10 dBVrms Gain change when VCOIN = -10 dBVrms BCOMP = 1 compressor is bypassed Gain tracking VCOIN = -30 dBVrms VCOIN = -50 dBVrms VCOIN = -60 dBVrms VCOIN = -70 dBVrms Attack time VCOIN= step -30 dBVrms -18 dBVrms measure time after step when output voltage has 1.5 times the final value Release time VCOIN= step -18 dBVrms -30 dBVrms measure time after step when output voltage has 0.75 times the final value Scrambler EPREE BSCR BCOMP 0 0 1 Conversion gain versus FIN=1kHz, FOUT=3.1kHz frequency FIN (1 kHz) FIN=0.1kHz, FOUT=4.0kHz reference level 0 dB FIN=0.3kHz, FOUT=3.8kHz FIN=0.7kHz, FOUT=3.4kHz FIN=1.8kHz, FOUT=2.3kHz FIN=2.6kHz, FOUT=1.5kHz FIN=3.2kHz, FOUT=0.9kHz FIN=3.4kHz, FOUT=0.7kHz Carrier break through Descrambler EDEE BSCR BCOMP 0 0 1 Conversion gain vs. FIN=4kHz, FOUT=0.1kHz frequency FIN=3.8kHz, FOUT=0.3kHz FIN=3.4kHz, FOUT=0.7kHz FIN=2.3kHz, FOUT=1.8kHz FIN=l.5kHz, FOUT=2.6kHz FIN=0.9kHz, FOUT=3.2kHz FIN=0.7kHz, FOUT=3.4kHz Carrier break through Measure FOUT = 4.099 kHz
G1TX1 G1TX2 G1TX3 0 1 0 14 22 kW 9 5.5 10 dB 9 0.5 dB 9 -9 -19 -28 dB
9

ms 9
tf
14.4
ms 9
-1.0 -4.4 -2.1 -0.8 -1.1 -1.1 -2.5 -5
0 -3.4 -1.1 0.2 -0.1 -0.1 -0.5 -4 10
1.0 -2.4 -0.1 1.2 0.9 0.9 -0.5 -3 20
dB
11
mVrms
-3.6 -1.3 -0.4 -1.5 -0.4 -1.7 -1.9
-2.6 -0.3 0.6 0.5 0.6 -0.3 -0.9 0.1
-1.6 0.7 1.6 0.5 1.6 0.7 0.1 0.5
dB
11
mVrms
Rev. A3, 20-May-98
7 (17)
Preliminary Information
U3500BM
Parameters Data management Receive data management Duty cycle RXDAT Test Conditions / Pins GDEM 1 Symbol ERXHF 1 0.4 0.5 0.6 10 Min. Typ. Max. Unit Fig. ERX1 1
VIF = 100 mVrms fIF = 450 kHz fMIF = 1 kHz DfIF = 5 kHz Transmit data management ETX1 1 Input impedance TXDAT Final value of step reETDM = 1, BSCR = 1 sponse VTXDAT = step 1.5 V 1.75 V Measure step at TXO Logical Part Inputs: C, D Low voltage input High voltage input Input leakage current (0 < VI < VCC) Input LOIN Input leakage current (0 < VI < VCC) Outputs: DACO, RXDAT Output low lol = 10 mA Output high loh = -10 mA Serial bus Data set-up time tsud Data hold time thd Clock low time tcl Clock high time tch Hold time before transfer teon condition Data low pulse on transfer teh condition Data high pulse on teof transfer condition
200 311
kW mV
10 10
0.2 VCC 0.8 VCC -1 -5 +5 5
mA mA
0.1 VCC 0.9 VCC 0.1 0 2 2 0.1 0.2 0.2
ms ms ms ms ms ms ms
14
8 (17)
Rev. A3, 20-May-98
Preliminary Information
U3500BM
Parameters Battery Management Max bat low Min bat low over switch Max bat high Min bat high Adjust step Max - Min MINBL - SWOFF Battery Switch Off threshold On threshold Hysteresis Switch ron Max bat low Min bat low Max bat high Min bat high Adjust step Max - Min MINBL - SWOFF Off threshold On threshold Hysteresis Switch ron : : : : : : : : : : : Test Conditions / Pins DA0 to 6 = 1, RBAT = 1 DA0 to 6 = 27 BIN, RBAT = 1 DA0 to 6 = 1, RBAT = 0 DA0 to 6 = 0, RBAT = 0 Symbol Min. 3.7 3.05 4.75 3.83 3.5 852.5 100 2.9 3.1 220 DA0 to 6 = 0, RBAT = 0 Typ. 3.95 3.2 5.05 4.1 7.5 952.5 200 3.0 3.2 250 35 Max. 4.1 3.35 5.25 4.27 11.5 1052.5 300 3.1 3.35 280 50 Unit V V V V mV mV mV V V mV Fig.
DA0 to 6 = 1, RBAT = 1 DA0 to 6 = 27 BIN, RBAT = 1
W
MAXL (battery voltage when all DAC bits are high, low range) MINBL (battery voltage when DAC bits are 001 1011, low range) MAXBH (battery voltage when all DAC bits are high, high range) MINBH (battery voltage when all DAC bits are low, high range) Adjust step MAXBH - MINBH MINBL - SWOFF SWOFF (off threshold of the battery switch) SWON (on threshold of the battery switch) SWON- SWOFF Switch Ron (resistance of the switch transistor, when switch is "ON")
LNAIN 18 1 nF 200 VFRF
LNA
20
LNAO 100 pF MIXIN 3 k 10 nF 50 VBATT
11779
16
15
MIXO 1.5 k
RF generator
11.15 MHz 100 nF RF generator
11780
VFRF
Figure 3.
Figure 4.
Rev. A3, 20-May-98
9 (17)
Preliminary Information
U3500BM
26 IFIN2 IFIN1 13 25 100 nF VIF 100 nF 14 24
D Setup C DACO RSSI-level programming RSSI-level information
11781
20 k 100 nF
MICO 4 26 MIC2 5 25 MIC1 100
11784
D Setup
VMIC
100 6
C
Figure 5.
Figure 8.
CTC IFIN2 13 8 RXO 100 nF VIF IFIN1 14 470 nF 100 nF 2.5 k
14696
2
26
D Setup
470 nF 25 COIN 100 nF VCOIN 3 1 C TXO
100 k
11785
Figure 6. Figure 9.
RECO2 1 k
9
26
D Setup 100 k TXO 1
28 TXDAT VTXDAT 27 RXDAT 1.5 V IFIN2 100 nF IFIN1 VIF
11783
RECO1 10 EXIN
25
C
11 13 14 26 D 25 C Setup
100 nF ETC VEXIN 470 nF 12
100 nF Figure 10.
14679
Figure 7.
10 (17)
Rev. A3, 20-May-98
Preliminary Information
U3500BM
DATA F-3 dB=3.35 kHz Gain stage F-3 dB=3.95 kHz Output buffer
Signal: 4.1 kHz/DC/OFF State : SCRON/SCROFF/DATA Gain : -4 dB/0 dB/OFF
Signal: 1 kHz State : SCRON/SCROFF Gain : 5.9 dB/1.9 dB
Demo- dulator
F-3 dB=90 Hz
RGAIN ADJ
F-3 dB=3.95 kHz
F-3 dB=3.35 kHz Deemphasis
Signal: 4.1 kHz/DC/OFF State : DESCRON/DESCROFF/DATA Gain : -4 dB/0 dB/OFF
Signal: 1 kHz State : DESCRON/DESCROFF Gain : -0.5 dB/-4.5 dB
F-3 dB=1 kHz DATA Comparator
11786
Figure 11.
Serial Bus Interface
The circuit is remoted by an external microcontroller through the serial bus (programming can be started 10 ms after power supply settled). The data is an 12-bit word: A3 - A0: address of the destination register (0 to 15) D7 - D0: contents of register The data line must be stable when the clock is high and data must be serially shifted. After 12 clock periods, the transfer to the destination register is (internally) generated by a low-to-high transition of the data line when the clock is high.
Data Microprocessor Clock
D C
96 11787
Figure 12.
Rev. A3, 20-May-98
11 (17)
Preliminary Information
U3500BM
Data (D) D0 D1 D2 A1 A2 A3
Clock (C) Ist word
13317
2nd word Transfer condition
Word transmission Figure 13.
Data 4 Clock 8
0 Address decoder 15
96 11789
128 latches
Commands Figure 14.
Data (D) A1 A2 A3 D0
(C) Clock tsud thd tch tcl teon teh teoff
13318
Figure 15.
12 (17)
Rev. A3, 20-May-98
Preliminary Information
U3500BM
Content of Internal Registers
The registers have the following structure: D7 D6 D5 RO: Reference for D/A converter MUXDA DA6 DA5 MUXDA: DA(6:0): D/A multiplexing Reference voltage D/A D4 D3 D2 D1 D0
DA4
DA3
DA2
DA1
DA0
R1: Gain adjustment RECLF GEA2 GEA1 GEA3
GEA0
GRX3
GRX2
GRX1
GRX0
GEA(3:0): Gain earpiece amplifier (see also R5) GRX(3:0): Gain adjustment RX R2: Gain adjustment TRANLF G2TX2 G2TX1 G2TX3
G2TXO
G1TX3
G1TX2
G1TX1
G1TX0
G2TX(3:0): Gain adjustment TX after limiter G1TX(3:0): Gain adjustment TX R3: Enable functions receive GDEM EDDE EEA GDEM: EDDE: EEA: ERXO: ERXHF: ELNA: ERX(l:0):
ERXO
ERX1
ERXHF
ELNA
ERX2
Gain demodulator Enable deemphasis (disables bypass) Enable earpiece amplifier Enable RXO output Enable mixer and IF amplifier Enable low-noise amplifier Enable parts of RXLF
R4: Enable functions transmit SSCCK RBAT BCOMP SSCCK: RBAT: BCOMP: BSCR: GMIC: ETDM: EPREE: ETX: R5: free GEA4: EXTLO:
BSCR
GMIC
ETDM
EPREE
ETX
Shift SC-clock (chifts SC-clock by 17/16) Battery detection high/low range Bypass compressor and expander Bypass scrambler and descrambler Gain of microphone preamplifier Enable transmit data management Enable preemphasis (disables bypass) Enable TX low frequency part
free
free
free
free
free
GEA4
EXTLO
Gain earpiece amplifier MSB (see also R1) Select input mixer
R6 - R15: reserved for U3550BM
Rev. A3, 20-May-98
13 (17)
Preliminary Information
U3500BM
Example of Mode Setting Using Enable Bits
(U3500B + U3550B)
Active Mode (Transmission) Active Mode (PLL Convergence Waiting) Receive Mode (Only Data) Receive Mode (RX Waiting) Standby Mode (ex. Battery Low) Inactive Mode (Switch Off)
*PA (VTX PIN), EEA *EVCO1 ETX, ERX2, ERXO ERX1 ERXHF, ELNA *EVCO3 RSSI / Battery Management (MUXDA) LOGIC PART (Enables when VBatt > 3.2 V) Switch Comparator (Always Enabled)
X X X X X X X X X X
X
X
X
X
X
X
X
X
X
X
X
* refer to U3550BM
14 (17)
Rev. A3, 20-May-98
Preliminary Information
680 pF 1 mF 100 nF 330 nF 330 nF 68 nF 24 kW
5.6 kW
Rev. A3, 20-May-98
10 nF 27 26 25 24 23 22 21 20 19 18 17 16 15
330 nF
28
Application Circuit
560 k W
U3550BM
56 kW 1 nF
390 k W 2 5 10 nF 330 nF 1.5 kW 330 nF 100 nH 4.7 pF 11.15 MHz 100 pF 10G75A 10.7 MHz 4.7 k W 1 nF GND 330 nF 330 nF 510 W 26 25 24 23 22 21 20 19 18 17 16 15 100 nF IN RX TX GND 100 nF 33 pF 2x BZT55C51 6 7 8 9 10 11 12 13 14 3 4
1
MCKO
VCC
1
mH
DGND
Figure 16.
D
C
Duplex filter
ANT
DACO
Preliminary Information
U3500BM
CFU450G 3 4 7 5 6 8 9 10 11 12 13 14 100 nF 470 nF 470 nF 330 nF
RXDAT
22 nF
TXDAT
28
27
1
2
U3500BM
330 nF
15 (17)
U3500BM
Package Information
Package SO28
Dimensions in mm
18.05 17.80 9.15 8.65 7.5 7.3
2.35 0.4 1.27 28 16.51 15 0.25 0.10 0.25 10.50 10.20
technical drawings according to DIN specifications 13033
1
14
16 (17)
Rev. A3, 20-May-98
Preliminary Information
U3500BM
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Rev. A3, 20-May-98
17 (17)
Preliminary Information

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