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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D076
BLV920 UHF power transistor
Product specification Supersedes data of 1995 Apr 10 1997 Nov 17
Philips Semiconductors
Product specification
UHF power transistor
FEATURES * Internal input matching to achieve high power gain and easy design of wideband circuits * Emitter ballasting resistors for an optimum temperature profile * Gold metallization ensures excellent reliability. APPLICATIONS * Base station transmitters in the 820 to 960 MHz range.
handbook, halfpage
BLV920
DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171A flange envelope with a ceramic cap. All leads are isolated from the flange.
2
4
6
c b
PINNING - SOT171A PIN 1 2 3 4 5 6 SYMBOL e e b c e e emitter emitter base collector emitter emitter Fig.1 Simplified outline and symbol.
Top view
DESCRIPTION
1 3 5
MAM141
e
QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter test circuit. MODE OF OPERATION CW, class-AB f (MHz) 960 VCE (V) 26 PL (W) 20 Gp (dB) 10 C (%) 55
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1997 Nov 17
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature operating junction temperature up to Tmb = 25 C open base open collector CONDITIONS open emitter - - - - - - -65 - MIN.
BLV920
MAX. 70 30 3 3 3 50 +150 200
UNIT V V V A A W C C
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Ptot = 49 W; Tmb = 25 C VALUE 3.5 0.4 UNIT K/W K/W
handbook, halfpage
10
MLC669
handbook, halfpage
80
MLC670
IC (A) (2) 1
P tot (W) (1) 60
(2) 40 (1)
20
10 1
1
10
V CE (V)
10 2
0 0 20 40 60 80 100 120 140 Th ( oC)
(1) Tmb = 25 C. (2) Th = 70 C.
(1) Continuous operation. (2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
1997 Nov 17
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre Note 1. Measured under pulsed conditions: tp 500 s; 0.01. PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 15 mA open base; IC = 30 mA open collector; IE = 0.6 mA VBE = 0; VCE = 28 V VCE = 10 V; IC = 1 A; note 1 VCB = 26 V; IE = ie = 0; f = 1 MHz VCE = 26 V; IC = 0; f = 1 MHz MIN. 70 30 3 - 30 - - - - - - - 17 11 TYP.
BLV920
MAX. - - - 1.5 120 - -
UNIT V V V mA pF pF
MLC671
handbook, halfpage
100
handbook, halfpage
60
MLC672
h FE 80
(1)
Cc (pF) 40
60
(2)
40 20 20
0
0
1
2
3
4
5 I C (A)
6
0
0
10
20
30
40 50 VCB (V)
Measured under pulsed conditions; tp 500 s; 0.01. (1) VCE = 26 V. (2) VCE = 10 V.
IE = ie = 0; f = 1 MHz.
Fig.4
DC current gain as a function of collector current; typical values.
Fig.5
Collector capacitance as a function of collector-base voltage; typical values.
1997 Nov 17
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance at Th = 25 C in a common emitter, class-AB test circuit; Rth mb-h = 0.4 K/W. MODE OF OPERATION CW, class-AB Ruggedness in class-AB operation f (MHz) 960 VCE (V) 26 ICQ (mA) 50 PL (W) 20 Gp (dB) 10
BLV920
C (%) 55
The BLV920 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases at rated output power, under the following conditions: VCE = 26 V; f = 960 MHz; ICQ = 50 mA; Th = 25 C; Rth mb-h = 0.4 K/W.
handbook, halfpage
16
MLC673
MLC674
80 (%) Gp 60
handbook, halfpage
30
Gp (dB) 12
PL (W) 20
8 40
10 4 20
0 0 10 20 P L (W) 30
0
0 0 1 2 3 P i (W) 4
VCE = 26 V. ICQ = 50 mA. f = 960 MHz.
VCE = 26 V. ICQ = 50 mA. f = 960 MHz.
Fig.6
Power gain and efficiency as functions of load power; typical values.
Fig.7
Load power as a function of input power; typical values.
1997 Nov 17
5
Philips Semiconductors
Product specification
UHF power transistor
BLV920
handbook, full pagewidth
R1 L13 C8 C7
C6
C18
C20
C14
C15
C17
R2 L14 VCC C16 C19
VB
L12
L11
input 50
C1
,,,,,,,,,,, ,,,,,,,,,,,
L1 L2 L3 C5 DUT L4 C10 L5 L6 L7 L8 L9 L10 C2 C3 C4 C9 C11 C12
C13
output 50
MGC325
Fig.8 Class-AB test circuit at f = 960 MHz.
List of components (see Figs 8 and 9) COMPONENT C1, C13 C2, C3, C11, C12 C4, C5 C6, C17 C7, C16 C8, C19 C14 C9, C10 C20 C15, C18 L1 L2 L3 DESCRIPTION multilayer ceramic chip capacitor; note 1 film dielectric trimmer multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 1 ceramic capacitor solid aluminium capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 stripline; note 3 stripline; note 3 stripline; note 3 VALUE 43 pF 1.4 pF to 5.5 pF 10 pF 150 pF 22 nF 10 F, 63 V 20 pF 11 pF 1 nF 62 pF 50 50 50 length 16.8 mm width 2.4 mm length 14.8 mm width 2.4 mm length 13.7 mm width 2.4 mm 2222 640 08223 2222 030 38109 2222 809 09001 DIMENSIONS CATALOGUE No.
1997 Nov 17
6
Philips Semiconductors
Product specification
UHF power transistor
BLV920
COMPONENT L4 L5 L6 L7 L8 L9 L10 L11
DESCRIPTION stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 4 turns enamelled 0.8 mm copper wire 3 turns enamelled 0.8 mm copper wire grade 3B Ferroxcube wideband RF choke metal film resistor 43 43 43 43 50 50 50
VALUE
DIMENSIONS length 3.5 mm width 3 mm length 6.4 mm width 3 mm length 5.8 mm width 3 mm length 2.4 mm width 3 mm length 3 mm width 2.4 mm length 15.5 mm width 2.4 mm length 20 mm width 2.4 mm int. diameter 4mm length 5 mm leads 2 x 5 mm int. diameter 3mm length 5 mm leads 2 x 5 mm
CATALOGUE No.
45 nH
L12
30 nH
L13, L14 R1, R2 Notes
4312 020 36642 10 , 0.4 W 2322 151 71009
1. American Technical Ceramics type 100B or capacitor of same quality. 2. American Technical Ceramics type 100A or capacitor of same quality. 3. The striplines are on double-clad PCB with PTFE fibre-glass dielectric (r = 2.2); thickness 132".
1997 Nov 17
7
Philips Semiconductors
Product specification
UHF power transistor
BLV920
handbook, full pagewidth
122
copper straps
copper straps
rivets
rivets
70
rivets
rivets
copper straps
copper straps
C8 C20 L13 C6 C7 R1 C18 L12 C5 L1 C1 C2 L2 L3 C4 L4 L5 C14 C15 L11 C10 L6 L7 L8 C9 C3 C11 L9 R2 C17
C19
L14 C16
L10 C13 C12
MGC326
Dimensions in mm. The components are located on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. Earth connections are made by fixing screws, hollow rivets and copper straps around the board and under the emitters to provide a direct contact between the component side and the ground plane.
Fig.9 Component layout for 960 MHz class-AB test circuit. 1997 Nov 17 8
Philips Semiconductors
Product specification
UHF power transistor
BLV920
MLC675
MLC676
handbook, halfpage
10
handbook, halfpage
5
Zi () 8 xi 6
ZL () 4
RL
3 XL
4 ri 2
2
1
0 820
860
900
940 f (MHz)
980
0 820
860
900
940 f (MHz)
980
VCE = 26 V; ICQ = 50 mA; PL = 20 W; Th = 25 C; Rth mb-h = 0.4 K/W.
VCE = 26 V; ICQ = 50 mA; PL = 20 W; Th = 25 C; Rth mb-h = 0.4 K/W.
Fig.10 Input impedance as a function of frequency (series components); typical values.
Fig.11 Load impedance as a function of frequency (series components); typical values.
handbook, halfpage
12
MLC677
Gp (dB) 8
handbook, halfpage
4
Zi ZL
0 820
MBA451
860
900
940 f (MHz)
980
VCE = 26 V; ICQ = 50 mA; PL = 20 W; Th = 25 C; Rth mb-h = 0.4 K/W.
Fig.12 Power gain as a function of frequency; typical values.
Fig.13 Definition of transistor impedance.
1997 Nov 17
9
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads
BLV920
SOT171A
D
A F D1
U1 q H1 b1 C w2 M C
B
c
2
4
6
H
U2
E1
E
A
1
3
5
b e
p w3 M
w1 M A B Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 6.81 6.07 b 2.15 1.85 b1 3.20 2.89 c 0.16 0.07 D 9.25 9.04 D1 9.30 8.99 E 5.95 5.74 E1 6.00 5.70 e 3.58 F H H1 p 3.43 3.17 Q q U1 U2 w1 0.51 w2 1.02 0.04 w3 0.26 0.01
3.05 11.31 9.27 2.54 10.54 9.01
4.32 24.90 6.00 18.42 4.11 24.63 5.70
0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224
OUTLINE VERSION SOT171A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
1997 Nov 17
10
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV920
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Nov 17
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA56
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127067/00/02/pp12
Date of release: 1997 Nov 17
Document order number:
9397 750 03093

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