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 GT30J121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J121
High Power Switching Applications Fast Switching Applications
* * * The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) * Low saturation voltage: VCE (sat) = 2.0 V (typ.) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 20 30 60 170 150 -55 to 150 Unit V V A W C C
JEDEC JEITA TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Thermal Characteristics
Characteristics Thermal resistance Symbol Rth (j-c) Max 0.735 Unit C/W
1
2002-04-19
GT30J121
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Turn-on switching loss Turn-off switching loss Symbol IGES ICES VGE (OFF) VCE (sat) Cies td (on) tr ton td (off) tf toff Eon Eoff Inductive Load VCC = 300 V, IC = 30 A VGG = +15 V, RG = 24 (Note 1) (Note 2) Test Condition VGE = 20 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 3 mA, VCE = 5 V IC = 30 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Min 3.5 Typ. 2.0 4650 0.09 0.07 0.24 0.30 0.05 0.43 1.00 0.80 Max 500 1.0 6.5 2.45 mJ s Unit nA mA V V pF
Switching loss
Note 1: Switching time measurement circuit and input/output waveforms
VGE GT30J324 0 -VGE IC RG VCE 0 VCE L VCC IC 90% 10% td (off) tf toff 10% 10% td (on) tr ton 90% 10%
90% 10%
Note 2: Switching loss measurement waveforms
VGE 0
90% 10%
IC VCE Eoff Eon 5%
0
2
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GT30J121
IC - VCE
60 Common emitter 50 Tc = 25C 20 15 20
VCE - VGE
(V)
10 Common emitter Tc = -40C 16
(A)
IC
40
9
Collector-emitter voltage VCE
12
Collector current
30
8 60 30 4 IC = 10 A 0 0 4 8 12 16 20
20 VGE = 8 V 10
0
0
1
2
3
4
5
Collector-emitter voltage VCE
(V)
Gate-emitter voltage
VGE
(V)
VCE - VGE
20 Common emitter 20
VCE - VGE
Common emitter
(V)
Tc = 25C 16
(V)
Tc = 125C 16
Collector-emitter voltage VCE
12
Collector-emitter voltage VCE
12
8 30 60 4 IC = 10 A 0 0 4 8 12 16 20
8 30 4 IC = 10 A 0 0 4 8 12 16 20 60
Gate-emitter voltage
VGE
(V)
Gate-emitter voltage
VGE
(V)
IC - VGE
60 Common emitter 50 VCE = 5 V 4 Common emitter
VCE (sat) - Tc
Collector-emitter saturation voltage VCE (sat) (V)
VGE = 15 V 3 60
(A) Collector current IC
40
30
2
30
20
IC = 10 A 1
10 Tc = 125C 0 0 4 8
25 -40 12 16 20
0 -60
-20
20
60
100
140
Gate-emitter voltage
VGE
(V)
Case temperature Tc
(C)
3
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GT30J121
Switching time ton, tr, td (on) - RG
10 Common emitter VCC = 300 V VGG = 15 V IC = 30 A : Tc = 25C : Tc = 125C (Note 1) 3
Switching time ton, tr, td (on) - IC
Common emitter VCC = 300 V VGG = 15 V RG = 24 : Tc = 25C : Tc = 125C (Note 1)
(s)
3
(s)
ton, tr, td (on)
1
1
ton, tr, td (on)
0.3 ton 0.1 td (on)
0.3 ton 0.1 td (on) tr
Switching time
Switching time
0.03
0.03 tr 0.01 0
0.01 1
3
10
30
100
300
1000
5
10
15
20
25
30
Gate resistance RG
()
Collector current
IC
(A)
Switching time toff, tf, td (off) - RG
10 Common emitter VCC = 300 V VGG = 15 V IC = 30 A : Tc = 25C : Tc = 125C (Note 1) 10
Switching time toff, tf, td (off) - IC
Common emitter VCC = 300 V VGG = 15 V RG = 24 : Tc = 25C : Tc = 125C (Note 1) toff 0.3 td (off) tf 0.1
(s)
(s)
3
3
toff, tf, td (off)
1
toff, tf, td (off) Switching time
30 100 300 1000
1
0.3
toff td (off)
Switching time
0.1
0.03
tf
0.03
0.01 1
3
10
0.01 0
5
10
15
20
25
30
Gate resistance RG
()
Collector current
IC
(A)
Switching loss
30 Common emitter VCC = 300 V VGG = 15 V IC = 30 A : Tc = 25C : Tc = 125C (Note 2)
Eon, Eoff - RG
3
Switching loss
Eon, Eoff - IC
(mJ)
(mJ)
Eon 1
10
Eon, Eoff
Eon
3
Eon, Eoff
0.3 Eoff 0.1 Common emitter VCC = 300 V VGG = 15 V RG = 24 : Tc = 25C : Tc = 125C (Note 2) 5 10 15 20 25 30
Switching loss
1 Eoff 0.3
Switching loss
10 30 100 300 1000
0.03
0.1 1
3
0.01 0
Gate resistance RG
()
Collector current
IC
(A)
4
2002-04-19
GT30J121
C - VCE
10000 500 Common emitter RL = 10 Tc = 25C
VCE, VGE - QG
20
Collector-emitter voltage VCE
400
16
(pF)
1000
C
Capacitance
200 300
300
200 VCE = 100 V 100
8
100 Common emitter VGE = 0 30 f = 1 MHz Tc = 25C 10 0.1 0.3 1 3 10 30 100 300 1000 Coes Cres
4
0 0
40
80
120
160
0 200
Collector-emitter voltage VCE
(V)
Gate charge
QG
(nC)
Safe Operating Area
100 IC max (pulsed)* IC max (continuous) 100 s* 10 DC operation 3 1 ms* 1 *: Single pulse Tc = 25C Curves must be 0.3 derated linearly with increase in temperature. 3 10 30 100 10 ms* 50 s* 30 100
Reverse Bias SOA
30
(A)
(A)
IC
Collector current
Collector current
IC
10
3
1
0.3
0.1 1
300
1000
0.1 1
Tj 125C VGE = 15 V RG = 24 3 10 30 100 300 1000
Collector-emitter voltage VCE
(V)
Collector-emitter voltage VCE
(V)
rth (t) - tw
(C/W)
102
101
rth (t)
10
0
Transient thermal resistance
10-1
10-2
10-3 Tc = 25C 10
-4
10-4 10-5
10
-3
10
-2
10
-1
10
0
101
102
Pulse width
tw
(s)
5
2002-04-19
Gate-emitter voltage
300
12
VGE
(V)
3000
Cies
(V)
GT30J121
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
6
2002-04-19


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