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| Schottky Barrier Diodes (SBD) MA3X717D, MA3X717E Silicon epitaxial planar type For switching circuits I Features * Two MA3X717s are contained in one package * Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704D/E) * Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2.8 - 0.3 0.65 0.15 1.5 + 0.25 - 0.05 + 0.2 Unit : mm 0.65 0.15 0.95 1.9 0.2 2.9 - 0.05 1 3 2 + 0.2 0.95 1.45 1.1 - 0.1 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double* Single Double* Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 -55 to +125 C C 1 mA Unit V V mA JEDEC : TO-236 EIAJ : SC-59 Mini Type Package (3-pin) MA3X717D MA3X717E 1 Cathode Anode 2 Cathode Anode 3 Anode Cathode Marking Symbol * MA3X717D : M3E * MA3X717E : M3D Internal Connection 1 3 2 Junction temperature Storage temperature Note) * : Value per chip 0 to 0.1 0.1 to 0.3 0.4 0.2 0.8 0.16 - 0.06 + 0.2 + 0.1 0.4 - 0.05 + 0.1 3 2 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Vin = 3 V(peak), f = 30 MHz RL = 3.9 k, CL = 10 pF Conditions D Min Typ E Max 30 0.3 1 1.5 1 Unit A V V pF ns Detection efficiency 65 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse Output Pulse tr 10% tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 1 MA3X717D, MA3X717E IF V F 103 1.0 Schottky Barrier Diodes (SBD) VF Ta 104 Ta = 125C 0.8 IR VR 102 75C 25C - 20C Forward current IF (mA) Forward voltage VF (V) Reverse current IR (A) Ta = 125C 103 IF = 30 mA 75C 102 10 0.6 10 mA 0.4 25C 10 1 10-1 0.2 1 mA 1 10-2 0 0.4 0.8 1.2 1.6 2.0 2.4 0 -40 10-1 0 40 80 120 160 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) Ct VR 3.2 2.8 f = 1 MHz Ta = 25C IR T a 104 Terminal capacitance Ct (pF) 103 2.0 1.6 1.2 0.8 0.4 0 Reverse current IR (A) 2.4 VR = 30 V 3V 1V 102 10 1 0 5 10 15 20 25 30 10-1 -40 0 40 80 120 160 200 Reverse voltage VR (V) Ambient temperature Ta (C) 2 |
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