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SFH6941
LOW CURRENT INPUT MINI OPTOCOUPLER
Preliminary Data Sheet
FEATURES * Transistor Optocoupler in SOT223 Package * End Stackable, 1.27 mm Spacing * Low Current Input * Very High CTR, 150% Typical at IF=1 mA, VCE=0.5V * Good CTR Linearity Versus Forward Current * Minor CTR Degradation * Field Effect Stable by TRIOS(R) (TRansparent IOn Shield) * High Collector-Emitter Voltage, VCEO=70 V * Low Coupling Capacitance * High Common Mode Transient Immunity * Isolation Test Voltage: 2500 VDC APPLICATIONS * Telecommunication * SMT * PCMCIA * Instrumentation DESCRIPTION The SFH6941 is a four channel mini-optocoupler suitable for high density packaged PCB application. It has a minimum of 2500 VDC isolation from input to output. The device consists of four phototransistors as detectors. Each channel is individually controlled. The optocoupler is housed in a SOT223 package. All the cathodes of the input LEDs and all the collectors of the output transistors are commoned enabling a pin count reduction from 16 pins to 10 pins--a significant space savings as compared to four channels that are electrically isolated individually.
N
Package Dimensions in Inches (mm)
Anode 1 1 Anode 2 2 Common Cathode 3 10 Emitter 1 9 Emitter 2 8 Common Collector 7 Emitter 3 6 Emitter 4 .256 .008 (6.5 .2)
Anode 3 4 Anode 4 5 .287 (7.3) .264 (6.6) .145 (3.7) .130 (3.3)
10 typ.
.013 (.24) .009 (.32)
.067 (1.7) .059 (1.5)
15 max. .020 (.5) min.
.016 -.002 (.4) (-.05)
(+.1)
+.004
.050 (1.27)
.043 .020 (1.1 .5)
Absolute Maximum Ratings Emitter(GaAlAs) Reverse Voltage .................................................................................. 3 V DC Forward Current ......................................................................... 5 mA Surge Forward Current (tP10 s) ................................................ 100 mA Total Power Dissipation ..................................................................10 mW Detector (Si Phototransistor) Collector-Emitter Voltage .................................................................. 70 V Emitter-Collector Voltage ..................................................................... 7 V Collector Current ............................................................................ 10 mA Surge Collector Current (tP<1 ms) ................................................. 20 mA Total Power Dissipation ..................................................................20 mW Package Insulation Isolation Test Voltage (between emitter and detector, refer to climate DIN 40046, part 2, Nov. 74) ......................... 2500 VDC Creepage .................................................................................................4 mm Clearance .................................................................................................4 mm Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 ...................................................175 Isolation Resistance VIO=100 V, TA=25C.................................................................. 1011 VIO=100 V, TA=100C................................................................ 1010 Storage Temperature Range ............................................. -55 to +150C Ambient Temperature Range............................................. -55 to +100C Junction Temperature ......................................................................100C Soldering Temperature (t=10 sec. max.)........................................260C Dip soldering plus reflow soldering processes
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Characteristics (TA=25C, unless otherwise specified)
Description Emitter (IR GaAs) Forward Voltage, IF=5 mA Reverse Current, VR=3 V Capacitance, VR=0 V, f=1 MHz Thermal Resistance Detector (Si Phototransistor) Collector-Emitter Voltage, ICE=10 A Emitter-Collector Voltage, IEC=10 A Capacitance, VCE=5 V, f=1 MHz Thermal Resistance Package Coupling Capacitance CC 1 pF VCEO VECO CCE RthJA 70 7 6 500 V V pF K/W VF IR C0 RthJA 1.25 0.01 5 1000 10 V A pF K/W Symbol Min. Typ. Max. Unit
Values Description Coupling Transfer Ratio IF=1 mA, VCE=0.5 V IF=0.5 mA, VCE=1.5 V Collector-Emitter Saturation Voltage IF=1 mA Collector-Emitter Leakage Current VCE=10 V Symbol -3 -4 -5 Unit
IC/ IF IC/ IF VCEsat ICEO
100-200 120 (50) 0.25 (0.4) (IC=0.5 mA) 50
160-320 200 (80) 0.25 (0.4) (IC=0.8 mA) 50
250-500 300 (125) 0.25 (0.4) (IC=1.25 mA) 50
% V nA
Switching times, typical IF
RL GND IC
47
VCC
Description Turn-on Time Rise Time Turn-off Time Fall Time
Symbol ton tr toff tf
Values 3 2.6 3.1 2.8
Unit
Test Conditions
s
IF=2 mA RL=100 TA=25C VCC=5 V
SFH6941
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Figure 1. LED current versus LED voltage VF=f(IF)
85 50 2 5 -2 5
Figure 4. Transistor output characteristics TA=25C, ICE=f(VCE, IF)
25
Figure 7. Permissible forward current diode IF=f(TA=25C)
8 7
101
20
I F = 5mA
6 5 4 3 2 1 0
100 ICE/mA
15
I F = 4mA I F / mA
I F / mA
10
I F = 3mA I F = 2mA
10 -1 5
I F = 1mA 10 -2 0 10-2
.8
.9
1 1.1 VF/V
1.2 1.3 1.4
10-1 100 VCE/V
101
102
0 10 20 30 40 50 60 70 80 90 100 T A /C
Figure 2. Saturated current transfer ratio normalized to IIF=1 mA, NCTR=f(IF)
2. 0 1. 8 1. 6 1. 4 1. 2 NCTR 1. 0 .8 .6 .4 .2 0 10 -4 IF/A 10-3 10-2 VCE=0.5V T A = 2 5 C I F =1m A
Figure 5. Transistor capacitance (typ.)TA=25C, f=1MHz, CCE=f(VCE)
25.0 22.5
Figure 8. Permissible power dissipation Ptot=f(TA)
30
25
20.0 17.5 15.0
Transistor 20
CCE/PF
12.5
15
CCE
10.0 7.5 5.0 2.5 0
P t o t /mW
Diod e 10
5
0 10 -1 10 0 101 102 0 10 20 30 40 50 60 70 80 90 100 T A /C VCE/V
10 -2
Figure 3. Non-saturated current transfer normalized to IF=1 mA, NCTR=f(IF)
2.0 1.8 1.6 1.4 1.2 V C E =1.5V T A =25C I F =1mA
Figure 6. Collector-emitter leakagecurrent (typ.) IF=0, TA=25C, ICEO=f(VCE)
10 3
Figure 9. TA=25C, IF=1 mA, VCC=5 V, ton, tr, toff,tt=f(RL)
103
10 2
10
101
toff tf t / us ton 101 tr
.8 .6 .4 .2 0 10 - 4 I F /A
ICEO/nA
NCTR
1.0
100
10 -1
10 -2
10 -3 10 - 3 10 -2
0
10
20 30 40 VCE/ V
50 60 70
100 102
103 RL/OHM
104
105
SFH6941
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