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| STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP3NA90 STP3NA90FI s s s s s s s V DSS 900 V 900 V R DS(on) < 5.3 < 5.3 ID 3A 1.9 A TYPICAL RDS(on) = 4.4 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 3 1 2 1 2 3 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM (*) P tot V ISO T stg Tj Parameter STP3NA90 Drain-Source Voltage (V gs = 0) Drain-Gate Voltage (R gs = 20 K) Gate-Source Voltage Drain-Current (continuous) at T c = 25 C Drain-Current (continuous) at T c = 100 o C Drain-Current (Pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max Operating Junction Temperature o o Value STP3NA90FI 900 900 30 3 2 12 100 1.25 -65 to 150 150 1.9 1.2 12 40 0.32 2000 Unit V V V A A A W W/ o C V o o C C (*)Pulse width limited by safe operating area March 1996 1/6 STP3NA90/FI THERMAL DATA TO220 R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max 0.8 62.5 0.5 300 ISOWATT220 3.12 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol I AR E AS EAR I AR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR , V DD = 50 V) Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%) Max Value 3 45 2 2 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A V GS = 0 Min. 900 250 1000 100 Typ. Max. Unit V A A mA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-Source Leakage Current (V DS = 0) V GS = 30 V T c = 125 o C ON () Symbol V GS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage V DS = VGS Static Drain-source On Resistance V GS = 10 V V GS = 10 V Test Conditions ID Min. 2.25 Typ. 3 4.4 Max. 3.75 5.3 10.6 Unit V A = 250 A T c = 100 o C I D = 1.5 A I D = 1.5 A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V 3 DYNAMIC Symbol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D = 1.5 A V GS = 0 Min. 1.5 Typ. 2.8 690 80 20 900 105 30 Max. Unit S pF pF pF 2/6 STP3NA90/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Parameter Turn-on Time Rise Time Turn-on Current Slope Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 450 V R G = 4.7 V DD = 720 V R G = 47 V DD = 720 V I D =3 A I D = 1.5 A V GS = 10 V ID = 3 A V GS = 10 V V GS = 10 V Min. Typ. 10 10 360 35 6 14 50 Max. 15 15 Unit ns ns A/s nC nC nC SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 720 V R G = 4.7 ID = 3 A V GS = 10 V Min. Typ. 11 8 19 Max. 10 13 26 Unit ns ns ns SOURCE DRAIN DIODE Symbol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 3 A I SD = 3 A V DD = 100 V V GS = 0 di/dt = 100 A/s o T j = 150 C 950 14.2 30 Test Conditions Min. Typ. Max. 3 12 1.6 Unit A A V ns C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area 3/6 STP3NA90/FI TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 F1 D G1 E Dia. L5 L7 L6 L4 P011C L9 4/6 F2 F G H2 STP3NA90/FI ISOWATT220 MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.4 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.015 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 D H F G1 E F2 123 L2 L4 P011G G 5/6 STP3NA90/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 6/6 |
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