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| MITSUBISHI IGBT MODULES CM100TU-24H HIGH POWER SWITCHING USE INSULATED TYPE A B F G E H E H G E S K R 4 - Mounting Holes L GuP EuP GvP EvP D C GwP EwP GuN EuN GvN EvN TC Measured Point u v TC Measured M Point GwN EwN w N 5 - M5 NUTS E H J E J H E K TAB#110 t=0.5 P Q Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies P GuP EuP U GvP EvP V GwP EwP W GuN EuN N GvN EvN GwN EwN Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 4.21 3.540.01 4.02 3.150.01 0.43 0.91 0.47 0.85 0.91 Millimeters 107.0 90.00.25 102.0 80.00.25 11.0 23.0 12.0 21.7 23.0 Dimensions K L M N P Q R S Inches 0.15 0.67 1.91 0.03 0.32 1.02 0.22 Dia. 0.57 Millimeters 3.75 17.0 48.5 0.8 8.1 26.0 5.5 Dia. 14.4 Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM100TU-24H is a 1200V (VCES), 100 Ampere SixIGBT Module. Type CM Current Rating Amperes 100 VCES Volts (x 50) 24 Sep.1998 MITSUBISHI IGBT MODULES CM100TU-24H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current** Peak Emitter Current** Maximum Collector Dissipation (Tj < 150C) Mounting Torque, M5 Main Terminal Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - Viso CM100TU-24H -40 to 150 -40 to 125 1200 20 100 200* 100 200* 650 2.5~3.5 2.5~3.5 680 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts N*m N*m Grams Vrms * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 10mA, VCE = 10V IC = 100A, VGE = 15V, Tj = 25C IC = 100A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage* VCC = 600V, IC = 100A, VGE = 15V IE = 100A, VGE = 0V Min. - - 4.5 - - - - Typ. - - 6 2.9 2.85 375 - Max. 1 0.5 7.5 3.7 - - 3.2 Units mA A Volts Volts Volts nC Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 100A, VGE1 = VGE2 = 15V, RG = 3.1, Resistive Load Switching Operation IE = 100A, diE/dt = -200A/s IE = 100A, diE/dt = -200A/s VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 0.55 Max. 15 5 3 100 200 300 350 300 - Units nF nF nF ns ns ns ns C C Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Test Conditions Per IGBT 1/6 Module Per Free-Wheel Diode 1/6 Module Per Module, Thermal Grease Applied Min. - - - Typ. - - 0.015 Max. 0.19 0.35 - Units C/W C/W C/W Sep.1998 MITSUBISHI IGBT MODULES CM100TU-24H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 200 160 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 VCE = 10V Tj = 25C Tj = 125C VGE = 10V Tj = 25C Tj = 125C Tj = 25oC VGE = 20V 15 12 160 11 4 3 2 1 120 10 120 80 40 80 40 0 9 8 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 0 40 80 120 160 200 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25C 102 Tj = 25C CAPACITANCE, Cies, Coes, Cres, (nF) VGE = 0V 8 IC = 200A EMITTER CURRENT, IE, (AMPERES) 101 6 IC = 100A Cies 102 4 2 IC = 40A 100 Coes Cres 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10-1 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -200A/sec Tj = 25C REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 VCC = 600V VGE = 15V RG = 3.1 Tj = 125C tf td(off) REVERSE RECOVERY TIME, trr, (ns) 103 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 100A 16 12 8 4 SWITCHING TIME, (ns) VCC = 400V VCC = 600V 102 td(on) trr 102 Irr 101 101 tr 100 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 100 101 EMITTER CURRENT, IE, (AMPERES) 100 102 0 0 100 200 300 400 500 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM100TU-24H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 10-2 10-1 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.19C/W 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.35C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998 |
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