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| CM400DU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMODTM 400 Amperes/250 Volts TC MEASURE POINT A D T - (4 TYP.) H G2 F BE C L CM C2E1 E2 C1 E2 E1 G1 J H U S - NUTS (3 TYP) Q Q P N G K K K R M C L Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM400DU-5F is a 250V (VCES), 400 Ampere Dual IGBTMODTM Power Module. Type CM Current Rating Amperes 400 VCES Volts (x 50) 5 G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 4.25 2.44 Millimeters 108.0 62.0 Dimensions L M N P Q R S T U Inches 0.87 0.33 0.10 0.85 0.98 0.11 M6 0.26 Dia. 0.002 Millimeters 22.0 8.5 2.5 21.5 25.0 2.8 M6 6.5 Dia. 0.05 1.14 +0.04/-0.02 29.0 +1.0/-0.5 3.660.01 1.880.01 0.67 0.16 0.24 0.59 0.55 93.00.25 48.00.25 17.0 4.0 6.0 15.0 14.0 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DU-5F Trench Gate Design Dual IGBTMODTM 400 Amperes/250 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current** (Tc = 25C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - Viso CM400DU-5F -40 to 150 -40 to 125 250 20 400 800* 400 800* 890 40 40 400 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 40mA, VCE = 10V IC = 400A, VGE = 10V, Tj = 25C IC = 400A, VGE = 10V, Tj = 125C Total Gate Charge Emitter-Collector Voltage* VCC = 100V, IC = 400A, VGE = 10V IE = 400A, VGE = 0V Min. - - 3.0 - - - - Typ. - - 4.0 1.2 1.1 1500 - Max. 1.0 0.5 5.0 1.7 - - 2.0 Units mA A Volts Volts Volts nC Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 100V, IC = 400A, VGE1 = VGE2 = 10V, RG = 6.3 , Resistive Load Switching Operation IE = 400A IE = 400A VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 16.0 Max. 110 7.0 3.8 850 400 1100 500 300 - Units nf nf nf ns ns ns ns ns C Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c)Q Rth(c-f) Test Conditions Per IGBT 1/2 Module Per FWDi 1/2 Module Per IGBT 1/2 Module* Per Module, Thermal Grease Applied Min. - - - - Typ. - - - 0.04 Max. 0.14 0.24 0.08 - Units C/W C/W C/W C/W 2 * TC measured point is just under chip. Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DU-5F Trench Gate Design Dual IGBTMODTM 400 Amperes/250 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 800 COLLECTOR CURRENT, IC, (AMPERES) 540 480 VGE = 15V 6.5 640 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC 10 8 800 6.25 VCE = 10V Tj = 25C Tj = 125C 2.0 VGE = 15V Tj = 25C Tj = 125C 1.6 1.2 0.8 0.4 6 5.75 480 320 5.5 320 160 0 160 5.25 5 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 2 4 6 8 10 0 160 320 480 640 800 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25C 102 Tj = 25C CAPACITANCE, Cies, Coes, Cres, (nF) Cies 8 6 4 2 EMITTER CURRENT, IE, (AMPERES) 101 Coes 102 IC = 800A IC = 400A IC = 160A 100 Cres VGE = 0V f = 1MHz 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10-1 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY TIME, trr, (ns) td(off) td(on) tf tr 103 103 20 IC = 400A 16 12 8 4 SWITCHING TIME, (ns) VCC = 50V trr Irr 102 102 102 VCC = 100V VCC = 100V VGE = 10V RG = 6.3 Tj = 125C VCC = 100V VGE = 10V RG = 6.3 Tj = 125C 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 103 0 0 500 1000 1500 2000 2500 3000 GATE CHARGE, QG, (nC) 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DU-5F Trench Gate Design Dual IGBTMODTM 400 Amperes/250 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 10-2 10-1 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.14C/W 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.24C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 4 |
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