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SMPS MOSFET
PD- 95906
IRFPS30N60KPBF
HEXFET(R) Power MOSFET
Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case )
VDSS
600V
RDS(on) typ.
160m
ID
30A
Super-247TM
Max.
30 19 120 450 3.6 30 13 -55 to + 150 300
Units
A W W/C V V/ns
C
Avalanche Characteristics
Symbol
EAS IAR EAR
Parameter
Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
520 30 45
Units
mJ A mJ
Thermal Resistance
Symbol
RJC RCS RJA
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.24 ---
Max.
0.28 --- 40
Units
C/W
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IRFPS30N60KPBF
Static @ TJ = 25C (unless otherwise specified)
Symbol V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. 600 --- --- 3.0 --- --- --- ---
Typ. --- 0.66 160 --- --- --- --- ---
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 190 m VGS = 10V, ID = 18A 5.0 V VDS = VGS, ID = 250A 50 VDS = 600V, VGS = 0V A 250 VDS = 480V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Max. Units Conditions --- S VDS = 50V, ID = 18A 220 ID = 30A 64 nC VDS = 480V 110 VGS = 10V --- VDD = 300V --- ID = 30A ns --- RG = 3.9 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 480V, = 1.0MHz --- VGS = 0V, VDS = 0V to 480V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 16 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 29 120 56 50 5870 530 54 6920 140 270
Diode Characteristics
Symbol IS
ISM
VSD trr Qrr IRRM ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Reverse RecoveryCurrent Forward Turn-On Time
Min. Typ. Max. Units --- --- --- --- 30 A 120
--- --- 1.5 V --- 640 960 ns --- 11 16 C --- 31 --- A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 30A, VGS = 0V TJ = 25C, IF = 30A di/dt = 100A/s
D
S
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 1.1mH, RG = 25,
IAS = 30A
ISD 30A, di/dt 630A/s, VDD V(BR)DSS,
TJ 150C
R is measured at TJ approximately 90C
2
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IRFPS30N60KPBF
100
100
VGS TOP 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
1
5.0V
1
0.1
5.0V 20s PULSE WIDTH Tj = 25C
20s PULSE WIDTH Tj = 150C
0.1 0.1 1 10 100
0.01 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.0
3.0
I D = 30A
ID, Drain-to-Source Current ( A)
T J = 150C
10.0
RDS(on) , Drain-to-Source On Resistance
2.5
2.0
(Normalized)
1.5
1.0
T J = 25C
1.0
0.1 5.0 6.0
VDS = 50V 20s PULSE WIDTH
7.0 8.0 9.0
0.5
V GS = 10V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ, Junction Temperature
( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFPS30N60KPBF
1000000 VGS = 0V, f = 1 MHZ C iss = C gs + Cgd , SHORTED Crss = Cgd Coss = Cds + Cgd
20
C ds
ID= 30A
100000
VGS , Gate-to-Source Voltage (V)
16
VDS= 480V VDS= 300V VDS= 120V
C, Capacitance (pF)
10000
Ciss
12
1000
8
Coss
100
4
Crss
10 1 10 100 1000
0 0 40 80 120 160 200 240 Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100.0
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10.0 TJ = 150C
10
100sec
1.0
1msec 1 Tc = 25C Tj = 150C Single Pulse 1 10 100 10msec
T J = 25C 0.1 0.2 0.4 0.6 0.8 1.0 VGS = 0V 1.2 1.4
0.1
1000
10000
VSD, Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFPS30N60KPBF
30
V DS VGS
RD
24
RG VGS
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-VDD
ID , Drain Current (A)
18
12
Fig 10a. Switching Time Test Circuit
6
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature
( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
(Z thJC )
D = 0.50 0.1 0.20
Thermal Response
0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.001 0.00001 0.0001 0.001 0.01 t1/ t 2 +T C 1
0.01
J = P DM x Z thJC
0.1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFPS30N60KPBF
15V
1000
ID TOP 13A 19A 30A
RG
20V
D.U.T
IAS tp
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
DRIVER
800
BOTTOM
+ V - DD
600
A
0.01
400
Fig 12a. Unclamped Inductive Test Circuit
200
V(BR)DSS tp
0 25 50 75 100 125 150
Starting T , J Junction Temperature
( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
12V .2F
50K .3F
QGS VG
QGD
D.U.T. VGS
3mA
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFPS30N60KPBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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IRFPS30N60KPBF
Case Outline and Dimensions -- Super-247
Super-247 (TO-274AA) Part Marking Information
EXAMPLE: THIS IS AN IRFPS37N50A WITH ASSEMBLY LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" PART NUMBER INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE
IRFPS37N50A 719C 17 89
DATE CODE YEAR 7 = 1997 WEEK 19 LINE C
Note: "P" in assembly line position indicates "Lead-Free"
TOP
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04
8
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