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| MIG50J6CSB1W MITSUBISHI SEMICONDUCTOR MIG50J6CSB1W (600V/50A 6in1) High Power Switching Applications Motor Control Applications * * * * * Integrates inverter, circuit and control circuits (IGBT drive units, and units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package. The electrodes are isolated from the case Low thermal resistance VCE (sat) = 1.8 V (typ.) UL recognized: File No. E87989 Equivalent Circuit 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 FO IN VD GND FO IN VD GND FO IN VD GND GND IN FO VD GND IN FO VD GND IN FO VD GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT W 1. 8. 15. VD (U) GND (V) Open 2. 9. 16. FO (U) VD (W) Open V 3. 10. 17. IN (U) FO (W) IN (X) 4. 11. 18. U GND (U) IN (W) IN (Y) 5. 12. 19. B VD (V) GND (W) IN (Z) 6. 13. 20. FO (V) VD (L) GND (L) N 7. 14. IN (V) FO (L) P 2004-10-01 1/10 MIG50J6CSB1W Package Dimensions Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) Open 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 18. FO (V) GND (W) IN (Y) 2004-10-01 2/10 MIG50J6CSB1W Signal Terminal Layout Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) Open 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 18. FO (V) GND (W) IN (Y) 2004-10-01 3/10 MIG50J6CSB1W Maximum Ratings (Tj = 25C) Stage Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Control supply voltage Control Input voltage Fault output voltage Fault output current Operating temperature Storage temperature range Module Isolation voltage Screw torque (Terminal) Screw torque (Mounting) AC 1 min M4 M5 Tc = 25C, DC Tc = 25C, DC Tc = 25C, DC VD-GND Terminal IN-GND Terminal FO-GND Terminal FO sink current Characteristic Condition P-N Power terminal Symbol VCC VCES IC IF PC Tj VD VIN VFO IFO Rating 450 600 50 50 340 150 20 20 20 14 -20~ + 100 -40~ + 125 2500 2 Nm 3 Unit V V A A W C V V V mA C C V Tc Tstg VISO Electrical Characteristics 1. Inverter stage Characteristics Collector cut-off current Symbol ICEX Test Condition VCE = 600 V VD = 15 V IC = 50 A VIN = 15 V 0 V IF = 50 A, Tj = 25C VCC = 300 V, IC = 50 A VD = 15 V, VIN = 15 V 0 V Tj = 25C, Inductive load (Note 1) Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1.5 Typ. 1.8 2.0 2.0 1.3 0.25 0.2 1.1 0.2 Max 1 10 2.2 2.5 2.2 2.1 s V V Unit mA Collector-emitter saturation voltage Forward voltage VCE (sat) VF ton tc (on) Switching time trr toff tc (off) Note 1: Switching time test circuit and timing chart 2004-10-01 4/10 MIG50J6CSB1W 2. Control stage (Tj = 25C) Characteristics Control circuit current Input on signal voltage Input off signal voltage Protection Fault output current Normal Over current protection trip level Inverter High side Low side Symbol ID (H) ID (L) VIN (on) VIN (off) IFO (on) IFO (off) OC SC toff (OC) Trip level Reset level Trip level Reset level OT OTr UV UVr tFO VD = 15 V VD = 15 V Test Condition Min 1.4 2.2 80 80 110 11.0 12.0 1 Typ. 13 39 1.6 2.5 10 5 118 98 12.0 12.5 2 Max 17 51 1.8 2.8 12 mA 0.1 125 12.5 13.0 3 ms A A s C V Unit mA VD = 15 V VD = 15 V VD = 15 V, Tj < 125C = VD = 15 V, Tj < 125C = VD = 15 V Case temperature Short circuit protection trip Inverter level Over cuttent cut-off time Over temperature protection Control supply under voltage protection Fault output pulse width V 3. Thermal resistance (Tc= 25C) Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) IGBT FRD Compound is applied Test Condition Min Typ. 0.017 Max 0.360 0.550 C/W Unit C/W 2004-10-01 5/10 MIG50J6CSB1W Switching Time Test Circuit Intelligent power module TLP559 (IGM) VD 0.1 F 15 k OUT IN 15 V 10 F GND VS P GND U (V, W) VCC VD IF = 16mA PG 15 V 10 F GND 0.1 F 15 k OUT IN VS N GND Timing Chart Input pulse 15 V VIN Waveform 0 2.5 V 1.6 V 90% Irr IC Waveform Irr 90% trr 20% Irr VCE Waveform 10% toff 10% tc (off) 10% ton 10% tc (on) 2004-10-01 6/10 MIG50J6CSB1W 4. Recommended conditions for application Characteristics Supply voltage Control supply voltage Carrier frequency Dead time Symbol VCC VD fc tdead Test Condition P-N Power terminal VD-GND Signal terminal PWM Control Switching time test circuit (See page.6) (Note 2) Min 13.5 3 Typ. 300 15 Max 400 16.5 20 Unit V V kHz s Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart 15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead 2004-10-01 7/10 MIG50J6CSB1W IC - VCE 100 VD = 17 V 80 15 V 60 13 V 100 IC - VCE VD = 17 V 13 V (A) (A) 80 15 V 60 IC Collector current 40 Collector current Common emitter Tj = 25C IC 40 20 20 Common emitter Tj = 125C 4 0 0 1 2 3 4 0 0 1 2 3 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Switching time - IC 10 5 3 10 Switching time - IC (s) 1 0.5 0.3 (s) ton toff 1 ton toff Switching time Switching time tc (on) tc (off) 0.1 Tj = 125C VCC = 300 V VD = 15 V L-Load tc (on) tc (off) 0.1 0.05 0.03 Tj = 25C VCC = 300 V VD = 15 V L-Load 10 20 30 40 50 60 0.01 0 0.01 0 10 20 30 40 50 60 Collector current IC (A) Collector current IC (A) IF - VF 100 100 trr, Irr - IF Peak reverse recovery current Irr (A) Reverse recovery time trr (x10ns) 80 (A) 30 Forward current IF 60 10 trr Irr 40 20 Common cathode :Tj = 25C :Tj = 125C 3 Common cathode :Tj = 25C :Tj = 125C 0 0 1 2 3 4 1 0 10 20 30 40 50 60 Forward voltage VF (V) Forward current IF (A) 2004-10-01 8/10 MIG50J6CSB1W OC - TC (mA) 200 30 ID (H) - fc Over current protection trip level OC (A) 150 ID (H) Inverter stage 25 High side control circuit current 20 100 15 10 50 5 VD = 15 V 0 0 25 50 75 100 125 150 VD = 15 Tj = 25C 5 10 15 20 25 0 0 Case temperature TC (C) Carrier frequency fc (kHz) ID (L) - fc (mA) 100 90 100 Reverse bias SOA ID (L) OC 70 Low side control circuit current 60 50 40 30 20 10 0 0 VD = 15 V Tj = 25C 5 10 15 20 25 IC (A) Collector current 80 80 60 40 20 Tj < 125C = VD = 15 V 0 0 100 200 300 400 500 600 700 Carrier frequency fc (kHz) Collector-emitter voltage VCE (V) Rth (t) - tw Inverter stage (C/W) 1 Tc = 25C 0.5 0.3 Transistor 0.1 0.05 0.03 Diode Transient thermal resistance Rth (t) 0.01 0.005 0.003 0.001 0.001 0.01 0.1 1 10 Pulse width tw (s) 2004-10-01 9/10 MIG50J6CSB1W Turn on loss - IC 10 5 3 10 5 3 Turn off loss - IC (mJ) 1 0.5 0.3 (mJ) 1 0.5 0.3 Eon Turn on loss 0.1 0.05 0.03 Turn off loss Eoff VCC = 300 V VD = 15 V L-LOAD : Tj = 25C : Tj = 125C 10 20 30 40 50 60 0.1 0.05 0.03 VCC = 300 V VD = 15 V L-LOAD : Tj = 25C : Tj = 125C 10 20 30 40 50 60 0.01 0 0.01 0 Collector current IC (A) Collector current IC (A) 2004-10-01 10/10 |
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