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| SFH 305 Mini-NPN-Silizium-Fototransistor Mini-Silicon NPN Phototransistor SFH 305 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Features q Especially suitable for applications from Bereich von 460 nm bis 1060 nm q Hohe Linearitat q Mini-Bauform q Gruppiert lieferbar Anwendungen q Miniaturlichtschranken fur Gleich- und 460 nm to 1060 nm q High linearity q Mini-package q Available in groups Applications q q q q Wechsellichtbetrieb q Lochstreifenleser q Industrieelektronik q "Messen/Steuern/Regeln" Miniature photointerrupters Punched tape reading Industrial electronics For control and drive circuits Typ Type SFH 305 SFH 305-2 SFH 305-3 Bestellnummer Ordering Code Q62702-P836 Q62702-P848 Q62702-P849 Semiconductor Group 262 10.95 feo06137 SFH 305 Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur bei Tauchlotung Lotstelle 2 mm vom Gehause, Lotzeit t 5 s Dip soldering temperature 2 mm distance from case bottom, soldering time t 5 s Lottemperatur bei Kolbenlotung Lotstelle 2 mm vom Gehause, Lotzeit t 3 s Iron soldering temperature 2 mm distance from case bottom, soldering time t 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, < 10 s Collector surge current Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value - 40 ... + 80 230 Einheit Unit C C Top; Tstg TS TS 300 C VCE IC ICS Ptot RthJA 32 50 200 70 950 V mA mA mW K/W Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Symbol Symbol S max Wert Value 850 460 ... 1060 Einheit Unit nm nm A 0.17 mm2 Semiconductor Group 263 SFH 305 Kennwerte (TA = 25 C, = 950 nm) Characteristics (cont'd) Bezeichnung Description Abmessung der Chipflache Dimensions of chip area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 25 V, E = 0 Symbol Symbol Wert Value 0.6 x 0.6 1.3 ... 1.9 Einheit Unit mm x mm mm LxB LxW H 16 5.5 Grad deg. pF CCE ICEO 3 ( 20) nA Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Description Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.5 mW/cm2 1) 1) Symbol Symbol -2 Wert Value -3 Einheit Unit IPCE IPCE t r, t f 0.25 ... 0.5 1.4 5.5 0.4 ... 0.8 2.2 6 mA mA s VCEsat 150 150 mV IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe IPCEmin is the min. photocurrent of the specified group Semiconductor Group 264 SFH 305 Relative spectral sensitivity Srel = f () Photocurrent IPCE = f (Ee), VCE = 5 V Total power dissipation Ptot = f (TA) Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V Collector-emitter capacitance CCE = f (VCE), f = 1 MHz, E = 0 Dark current ICEO = f (TA), VCE = 25 V, E = 0 Directional characteristics Srel = f () Semiconductor Group 265 |
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