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| VUO 52 Three Phase Rectifier Bridge IdAVM = 55 A VRRM = 800-1800 V VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Type 10 8 6 1/2 45 12 VUO 52-08NO1 VUO 52-12NO1 VUO 52-14NO1 VUO 52-16NO1 VUO 52-18NO1 4/5 6 8 10 Symbol IdAV IdAV IdAVM IFSM Test Conditions TK = 90C, module TA = 45C (RthKA = 0.5 K/W), module module TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 54 43 55 350 375 305 325 615 590 465 445 -40...+130 130 -40...+125 A A A A A A A A2s A2s A2s A2s C C C V~ V~ Nm lb.in. g Features Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop Leads suitable for PC board soldering UL registered E72873 q q q q q q q I2t TVJ = 45C VR = 0 TVJ = TVJM VR = 0 Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors q q q q TVJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT RthJH dS dA a 50/60 Hz, RMS IISOL 1 mA Mounting torque typ. Test Conditions VR = VRRM VR = VRRM IF = 55 A; TVJ = 25C TVJ = TVJM TVJ = 25C t = 1 min t=1s (M5) (10-32UNF) q q q 3000 3600 2 - 2.5 18-22 35 Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") Characteristic Values 0.3 5 1.46 0.8 12.5 1.5 0.25 12.7 9.4 50 mA mA V V mW K/W K/W mm mm m/s2 For power-loss calculations only per diode, 120 rect. per module, 120 rect. Creeping distance on surface Creepage distance in air Max. allowable acceleration (c) 2000 IXYS All rights reserved 1-2 934 Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. VUO 52 60 IF A 50 TVJ = 25C TVJ = 130C 40 max. 30 typ. 20 100 TVJ = 130C 10 50 150 TVJ = 130C 200 300 IFSM A 250 TVJ = 45C 1000 A2s It 2 50 Hz 0.8 x VRRM TVJ = 45C 0 0.0 0.5 1.0 1.5 2.0 V 2.5 VF 0 10-3 100 10-2 10-1 t s 100 1 t ms 10 Fig. 1 Forward current versus voltage drop per diode 200 Ptot W 160 Fig. 2 Surge overload current per diode IFSM: Crest value. t:duration Fig. 3 I2t versus time (1-10 ms) per diode 60 RthKA K/W 0.5 1 1.5 2 3 4 6 IdAVM A 50 40 120 30 80 20 40 10 0 0 10 20 30 40 50 A 0 IdAVM 25 50 75 100 C 125 TA 150 0 0 25 50 75 100 125 C 150 TK Fig. 4 Power dissipation versus direct output current and ambient temperature 1.6 ZthJK K/W 1.2 ZthJK Fig. 5 Maximum forward current at heatsink temperature TK 0.8 Constants for ZthJK calculation: i Rth (K/W) 0.005 0.2 0.845 0.45 ti (s) 0.008 0.05 0.06 0.3 0.4 1 2 3 4 VUO 52 0.0 10-3 10-2 10-1 100 101 s t 102 Fig. 6 Transient thermal impedance junction to heatsink per diode (c) 2000 IXYS All rights reserved 2-2 |
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