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| Power Transistors 2SB1653 Silicon PNP triple diffusion planar type For power switching 7.50.2 Unit: mm 4.50.2 10.80.2 s Features q q q 3.80.2 High collector to emitter VCEO Low collector to emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping (TC=25C) Ratings -400 -400 -7 -1 - 0.5 1.5 150 -55 to +150 Unit V V V A A W C C 90 0.650.1 0.850.1 2.50.1 1.00.1 0.8C 0.8C 0.70.1 0.70.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 16.01.0 s Absolute Maximum Ratings 0.50.1 2.50.2 0.8C 2.50.2 0.40.1 2.050.2 1 2 3 1:Emitter 2:Collector 3:Base MT3 Type Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time (TC=25C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob ton tstg tf * Conditions VCB = -400V, IE = 0 VCE = -100V, IB = 0 VEB = -5V, IC = 0 IC = -1mA, IB = 0 VCE = -5V, IC = -50mA VCE = -5V, IC = -300mA IC = -100mA, IB = -10mA VCE = -100mA, IB = -10mA VCB = -10V, IE = 0.2A, f = 1MHz VCB = -10V, IE = 0, f = 1MHz IC = -100mA, IB1 = -10mA, IB2 = 10mA, VCC = -150V, RL = 1.5k min typ max -1 -1 -1 Unit A A mA V -400 80 10 - 0.25 - 0.8 20 25 1.0 0.8 1.0 50 - 0.5 -1.2 280 V V MHz pF s s s *h FE1 Rank classification P 80 to 160 Q 130 to 280 Rank hFE1 1 Power Transistors PC -- Ta 2.0 Without heat sink -480 Ta=25C -400 -9mA -8mA IB=-10mA -7mA -6mA -5mA -4mA -3mA -2mA 2SB1653 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -10 IC/IB=10 VCE(sat) -- IC Collector power dissipation PC (W) Collector current IC (mA) 1.6 -1 -320 1.2 -240 - 0.1 Ta=75C -25C 25C 0.8 -160 -1mA -80 - 0.01 0.4 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -12 - 0.001 -1 -10 -100 -1000 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (mA) hFE -- IC 240 60 Cob -- VCB Collector output capacitance Cob (pF) VCE=-5V IE=0 f=1MHz TC=25C Forward current transfer ratio hFE 200 Ta=75C 160 50 25C 40 120 -25C 30 80 20 40 10 0 -1 -10 -100 -1000 0 -1 -10 -100 Collector current IC (mA) Collector to base voltage VCB (V) 2 |
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