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| N-CHANNEL 55V - 0.0065 - 80A TO-220/DPAK STripFETTM II POWER MOSFET Table 1: General Features TYPE STB140NF55 STP140NF55 STB140NF55 STP140NF55 Figure 1:Package RDS(on) ID 80 A 80 A VDSS 55 V 55 V < 0.008 < 0.008 TYPICAL RDS(on) = 0.0065 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS MOTOR CONTROL HIGH CURRENT, SWITCHING APPLICATIONS AUTOMOTIVE ENVIRONMENT 3 1 3 1 2 D2PAK TO-263 (Suffix "T4") TO-220 Figure 2: Internal Schematic Diagram Table 2: Order Codes Part Number STB140NF55T4 STP140NF55 MARKING B140NF55 P140NF55 PACKAGE DPAK TO-220 PACKAGING TAPE & REEL TUBE Table 3:ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID ID IDM(*) Ptot dv/dt(1) EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 55 20 80 80 320 300 2 10 1.3 -55 to 175 (1) ISD 80A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX (2) Starting Tj = 25 oC, ID = 40A, VDD = 30V Unit V V A A A W W/C V/ns mJ C (*) Pulse width limited by safe operating area. (**) Current Limited by Package December 2004 Rev. 2 1/11 STB140NF55 STP140NF55 Table 4: THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 0.5 62.5 300 C/W C/W C ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Table 5: OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 20 V Min. 55 1 10 100 Typ. Max. Unit V A A nA Table 6: ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 A ID = 40 A Min. 2 Typ. 3 0.0065 Max. 4 0.008 Unit V Table 7: DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 25 V ID = 40 A Min. Typ. 100 5300 1000 290 Max. Unit S pF pF pF VDS = 25V f = 1 MHz VGS = 0 2/11 STB140NF55 STP140NF55 ELECTRICAL CHARACTERISTICS (continued) Table 8: SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 40 A VDD = 27.5 V VGS = 10 V RG = 4.7 (Resistive Load, Figure 3) VDD= 44V ID= 80A VGS= 10V Min. Typ. 30 150 142 27 55 Max. Unit ns ns nC nC nC Table 9: SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions VDD = 27.5 V ID = 40 A VGS = 10 V RG = 4.7 (Resistive Load, Figure 3) Min. Typ. 125 45 Max. Unit ns ns Table 10: SOURCE DRAIN DIODE Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80 A VGS = 0 90 275 6.5 Test Conditions Min. Typ. Max. 80 320 1.5 Unit A A V ns C A ISD = 80 A di/dt = 100A/s Tj = 150C VDD = 20 V (see test circuit, Figure 5) (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area. Figure 3: Safe Operating Area Figure 4: Thermal Impedance 3/11 STB140NF55 STP140NF55 Figure 5: Output Characteristics Figure 6: Transfer Characteristics Figure 7: Transconductance Figure 8: Static Drain-source On Resistance Figure 9: Gate Charge vs Gate-source Voltage Figure 10: Capacitance Variations 4/11 STB140NF55 STP140NF55 Figure 11: Normalized Gate Threshold Voltage vs Temperature Figure 12: Normalized on Resistance vs Temperature Figure 13: Source-drain Diode Forward Characteristics Figure 14: Normalized Breakdown Voltage vs Temperature. . . . . 5/11 STB140NF55 STP140NF55 Figure 15: Unclamped Inductive Load Test CirFigure 16: Unclamped Inductive Waveform Figure 17: Switching Times Test Circuits For Resiscuit tive Load Figure 18: Gate Charge test Circuit Figure 19: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/11 STB140NF55 STP140NF55 TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L3 L4 L5 L6 L7 L9 DIA 13 2.65 15.25 6.20 3.50 3.75 mm. MIN. 4.4 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 16.40 28.90 14 2.95 15.75 6.60 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 TYP. MAX. 4.6 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 1.137 0.551 0.116 0.620 0.260 0.154 0.151 inch. TYP. TYP. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409 7/11 STB140NF55 STP140NF55 D2PAK MECHANICAL DATA DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 0 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.591 0.050 0.055 0.094 0.015 8 mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.21 8.95 8 10.4 0.394 0.334 0.208 0.624 0.055 0.069 0.126 TYP. MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.028 0.045 0.018 0.048 0.352 0.315 0.409 inch. TYP. TYP. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 8/11 STB140NF55 STP140NF55 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 BASE QTY 1000 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.795 0.960 3.937 1.197 BULK QTY 1000 1.039 0.520 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 0.35 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 MIN. 0.413 0.618 0.059 0.062 0.065 0.449 0.189 0.153 0.468 0075 1.574 .0.0098 0.933 0.0137 0.956 inch MAX. 0.421 0.626 0.063 0.063 0.073 0.456 0.197 0.161 0.476 0.082 * on sales type 9/11 STB140NF55 STP140NF55 Table 11:Revision History Date 07-Nov-2004 Revision 2 updated fig.14 Description of Changes 10/11 STB140NF55 STP140NF55 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners. (c) 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America. www.st.com 11/11 |
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