![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. L 2N5400S EPITAXIAL PLANAR PNP TRANSISTOR E B L FEATURES High Collector Breakdwon Voltage A Low Leakage Current. : ICBO=-100nA(Max.) @VCB=-100V Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA G : VCBO=-130V, VCEO=-120V 2 3 1 P P C N Low Noise : NF=8dB (Max.) DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 H M MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC * Tj Tstg RATING -130 -120 -5 -600 -100 350 150 -55 0.6 ) 150 UNIT V V V mA mA mW 1. EMITTER 2. BASE 3. COLLECTOR K SOT-23 Marking J D Lot No. Note : * Package Mounted On 99.5% Alumina 10 8 Type Name ZN 1999. 11. 30 Revision No : 2 1/2 2N5400S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage * SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) DC Current Gain * hFE(2) hFE(3) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Small-Signal Current Gain Noise Figure * * VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob hfe NF TEST CONDITION VCB=-100V, IE=0 VCB=-100V, IE=0, Ta=100 VEB=-3V, IC=0 IC=-0.1mA, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-10V, IC=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz VCE=-10V, IC=-1mA, f=1kHz VCE=-5V, IC=-250 A Rg=1k , f=10Hz 15.7kHz MIN. -130 -120 -5 30 40 40 100 30 TYP. MAX. -100 -100 -50 180 -0.2 -0.5 -1.0 -1.0 400 6 200 8 dB V UNIT nA A nA V V V V MHz pF * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 1999. 11. 30 Revision No : 2 2/2 This datasheet has been download from: www..com Datasheets for electronics components. |
Price & Availability of 2N5400S
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |