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| AP04N70BP Advanced Power Electronics Corp. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600/650/700V 2.4 4A G S Description AP04N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits. G D S TO-220 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating - /A/H 600/650/700 30 4 2.5 15 62.5 0.5 2 Units V V A A A W W/ mJ A mJ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 100 4 4 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.0 62 Unit /W /W Data & specifications subject to change without notice 20030332 AP04N70BP Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA VGS=0V, ID=1mA VGS=0V, ID=1mA BVDSS/Tj Min. //A /H 600 650 700 2 - Typ. 0.6 2.5 16.7 4.1 4.9 11 8.3 23.8 8.2 950 65 6 Max. Units 2.4 4 10 100 100 V V V V/ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150 C) o VGS=10V, ID=2A VDS=VGS, ID=250uA VDS=10V, ID=2A VDS=600V, VGS=0V VDS=480V,VGS=0V VGS= 30V ID=4A VDS=480V VGS=10V VDD=300V ID=4A RG=10,VGS=10V RD=75 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol IS ISM VSD Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=25mH , RG=25 , IAS=4A. 3.Pulse width <300us , duty cycle <2%. Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.5V Tj=25, IS=4A, VGS=0V Min. - Typ. - Max. Units 4 15 1.5 A A V Pulsed Source Current ( Body Diode ) 1 Forward On Voltage 3 Ordering Code AP04N70BP- X : X Denote BVDSS Grade Blank = BVDSS 600V A H = BVDSS 650V = BVDSS 700V AP04N70BP 2.5 2 T C =25 o C 2 V G =10V V G =6.0V V G =5.0V 1.5 T C =150 o C V G =10V V G =6.0V V G =5.0V V G =4.5V ID , Drain Current (A) 1.5 V G =4.5V 1 ID , Drain Current (A) 1 V G =4.0V 0.5 0.5 V G =4.0V V G =3.5V 0 0 1 2 3 4 5 6 7 0 0 2 4 6 8 10 12 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.5 I D =2A V G =10V 1.1 2 Normalized BVDSS (V) Normalized RDS(ON) 1.5 1 1 0.9 0.5 0.8 -50 0 50 100 150 0 -50 0 50 100 150 T j , Junction Temperature ( o C) T j , Junction Temperature ( o C ) Fig 3. Normalized BVDSS v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature AP04N70BP 4.5 80 4 3.5 60 ID , Drain Current (A) 3 PD (W) 25 50 75 100 125 150 2.5 40 2 1.5 20 1 0.5 0 0 0 50 100 150 T c , Case Temperature ( o C ) T c , Case Temperature ( o C ) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 10 Normalized Thermal Response (R thjc) DUTY=0.5 0.2 ID (A) 10us 100us 1 0.1 0.1 0.05 1ms 10ms 0.1 PDM 0.02 0.01 SINGLE PULSE t T Duty factor = t/T Peak Tj = P DM x Rthjc + TC 100ms T c =25 C Single Pulse 0.01 1 10 100 1000 10000 o 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP04N70BP 16 10000 f=1.0MHz I D =4A 14 VGS , Gate to Source Voltage (V) 12 V DS =320V V DS =400V Ciss 10 V DS =480V C (pF) 100 8 Coss 6 4 Crss 2 0 0 5 10 15 20 25 1 1 6 11 16 21 26 31 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 5 4 10 T j =150 o C VGS(th) (V) 1.4 1.6 IS (A) T j = 25 o C 3 2 1 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 0 -50 0 50 100 150 V SD (V) T j , Junction Temperature ( o C ) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP04N70BP VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.5x RATED VDS RG G 10% + 10 V S VGS VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 10V D G S + 0.8 x RATED VDS QGS QGD VGS 1~ 3 mA IG ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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