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| SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 AUGUST 1995 FEATURES * High VCEO * Low saturation voltage C BSP16 COMPLEMENTARY TYPE: BSP19 PARTMARKING DETAIL: BSP16 B E C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb =25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE -350 -300 -6 -1 -0.5 2 -55 to +150 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) hFE fT Cobo 30 15 15 MIN. -350 -300 -5 -1 -20 - 2.0 -0.5 120 MHz pF MAX. UNIT V V V A A CONDITIONS. IC=-100A IC=-10mA IE=-100A VCB=-280V VEB=-6V IC=-50mA, IB=-5mA* IC=-30mA, IB=-3mA* IC=-50mA, VCE=-10V* IC=-10mA, VCE=-10V* f = 30MHz VCB=-10V, f=1MHz V V *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FMMTA92 datasheet. 3 - 59 |
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