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PD - 93824A
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level IRHY57Z30CM 100K Rads (Si) IRHY53Z30CM 300K Rads (Si) IRHY54Z30CM 600K Rads (Si) IRHY58Z30CM 1000K Rads (Si) RDS(on) 0.03 0.03 0.03 0.035 ID 18A* 18A* 18A* 18A*
IRHY57Z30CM 30V N-CHANNEL ,
4#
TECHNOLOGY
c
TO-257AA
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by internal wire diameter For footnotes refer to the last page 18* 18* 72 75 0.6 20 177 18 7.5 1.7 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 (0.063in./1.6mm from case for 10 sec) 4.3 (Typical)
g
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1
4/17/2001
IRHY57Z30CM
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
30 -- -- 2.0 16 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.028 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.03 4.0 -- 10 25 100 -100 65 20 10 25 100 35 30 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 18A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 18A VDS= 24V ,VGS=0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 18A VDS = 15V VDD = 15V, ID = 18A, VGS =12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
2054 936 33
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 18* 72 1.2 102 193
Test Conditions
A
V ns nC Tj = 25C, IS = 18A, VGS = 0V Tj = 25C, IF = 18A, di/dt 100A/s VDD 25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by internal wire diameter
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 1.67 80
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
2
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Radiation Characteristics
IRHY57Z30CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-257AA) Diode Forward Voltage Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 30 2.0 -- -- -- -- -- -- -- 4.0 100 -100 10 0.025 0.03 1.2 30 1.5 -- -- -- -- -- -- -- 4.0 100 -100 10 0.03 0.035 1.2 V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA V GS = 20V VGS = -20 V VDS=24V, VGS =0V VGS = 12V, ID =18A VGS = 12V, ID =18A VGS = 0V, IS = 18A
1. Part numbers IRHY57Z30CM, IRHY53Z30CM and IRHY54Z30CM 2. Part number IRHY58Z30CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br I Au LET MeV/(mg/cm2)) 37.9 59.4 80.3 Energy (MeV) 255 290 313 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 33.5 30 30 30 25 20 28.5 25 25 20 15 10 26.4 22.5 22.5 15 10 --
35 30 25 VDS 20 15 10 5 0 0 -5 -10 VGS -15 -20 Br I AU
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY57Z30CM
Pre-Irradiation
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
5.0V
10
10
5.0V
1 0.1
20s PULSE WIDTH T = 25 C
J 1 10
1 0.1
20s PULSE WIDTH T = 150 C
J 1 10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
TJ = 150 C
R DS(on) , Drain-to-Source On Resistance (Normalized)
TJ = 25 C
2.0
18A ID = 22A
I D , Drain-to-Source Current (A)
1.5
10
1.0
0.5
1 5.0
15
V DS = 15V 20s PULSE WIDTH 8.0 6.0 7.0 9.0
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
4
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Pre-Irradiation
IRHY57Z30CM
4000
3200
VGS , Gate-to-Source Voltage (V)
VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
20
ID = 18A 22A
C, Capacitance (pF)
15
VDS = 24V VDS = 15V VDS = 6V
C oss
2400
Ciss
10
1600
5
800
C rss
0 1 10 100 0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40 50 60
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000 OPERATION IN THIS AREA LIMITED BY RDS(ON)
ISD , Reverse Drain Current (A)
TJ = 25 C
10
ID, Drain Current (A)
TJ = 150 C
100
10 Tc = 25C Tj = 150C Single Pulse 1 1 10 VDS, Drain-to-Source Voltage (V) 100 10ms
1 0.4
V GS = 0 V
0.8 1.2 1.6
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHY57Z30CM
Pre-Irradiation
50
LIMITED BY PACKAGE
VGS
40
VDS
RD
D.U.T.
+
I D , Drain Current (A)
RG
-VDD
30
VGS
Pulse Width 1 s Duty Factor 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 0.05
0.1
0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1
P DM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHY57Z30CM
400
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
300
ID 8.0A 11.4A BOTTOM 18A TOP
VD S
L
D R IV E R
RG
D .U .T.
IA S
200
+ - VD D
A
VGS 20V
tp
0 .0 1
100
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
V (B R )D S S tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHY57Z30CM
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 15V, starting TJ = 25C, L= 1.0 mH Peak IL = 18A, VGS = 12V ISD 18A, di/dt 54A/s, VDD 30V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 24 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-257AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/01
8
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