 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MITSUBISHI SEMICONDUCTOR MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. O U TLIN E 2 4 + /- 0 .3 u nit : m m 2M IN FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 30W (TYP.) @ f=2.7 - 3.5 GHz High power gain GLP = 12 dB (TYP.) @ f=2.7 - 3.5GHz High power added efficiency P.A.E. = 36 % (TYP.) @ f=2.7 - 3.5GHz Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L. (1 ) R 1 .2 0 .6 + /- 0 .1 5 17.4 +/- 0.2 8.0 +/- 0.2 (2 ) 2M IN (3 ) 2 0 .4 + /- 0 .2 APPLICATION item 01 : 2.7 - 3.5 GHz band power amplifier item 51 : 2.7 - 3.5 GHz band digital radio communication 0.1 +/- 0.05 Limits Typ. 24 8 45 12 8 36 -45 0.8 Max. -5 1 1 6 .7 QUALITY GRADE IG VDS = 10 (V) ID = 8 (A) RG=25 (ohm) 1.4 RECOMMENDED BIAS CONDITIONS 4.3 +/- 0.4 G F-38 (Ta=25deg.C) Ratings -15 -15 20 -80 168 150 175 -65 / +175 Unit V V A mA mA W deg.C deg.C (1 ) ga te (2 ) sou rce (fla ng e ) (3 )dra in < Keep safety first in your circuit designs! > ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID IGR IGF PT *1 Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. *1 : Tc=25deg.C ELECTRICAL CHARACTERISTICS Symbol IDSS gm VGS(off) P1dB GLP ID P.A.E. IM3 *2 Rth(ch-c) *3 (Ta=25deg.C) Test conditions VDS = 3V , VGS = 0V VDS = 3V , ID = 8A VDS = 3V , ID = 160mA Min. -2 44 VDS=10V, ID(RF off)=8A, f=2.7 - 3.5GHz 11 -42 delta Vf method Unit A S V dBm dB A % dBc deg.C/W Parameter Saturated drain current Transconductance Saturated drain current Output power at 1dB gain compression Linear power gain Drain current Power added efficiency 3rd order IM distortion Thermal resistance *2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=2.7,3.1,3.5GHz,delta f=10MHz *3 : Channel-case MITSUBISHI ELECTRIC June-'04 2.4 +/- 0.2 MITSUBISHI SEMICONDUCTOR MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS P1dB,GLP vs. f 47 VDS=10V ID=8A 46 22 50 VDS=10V ID=8A f=3.1GHz 45 80 Po 40 60 Po,P.A.E. vs. Pin 100 111 P1dB 20 OUTPUT POWER P1dB (dBm) LINEAR POWER GAIN GLP (dB) OUTPUT POWER Po (dBm) 45 18 44 16 35 P.A.E. 40 43 GLP 14 42 12 30 20 41 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 FREQUENCY f (GHz) 3.4 3.5 3.6 10 25 15 20 25 30 INPUT POWER Pin (dBm) 35 40 0 Po,IM3 vs. Pin 42 40 VDS=10V IDS=8A f=3.5GHz Delta f=10MHz 2-tone test 20 10 OUTPUT POWER Po (dBm) S.C.L. 38 36 34 Po 0 -10 -20 -30 -40 -50 -60 32 30 28 26 18 20 22 24 26 28 INPUT POWER Pin (dBm) S.C.L. 30 S parameters f (GHz) 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 ( Ta=25deg.C , VDS=10(V),IDS=8(A) ) S-Parameter (TYP.) S21 S12 Magn. Angle(deg) Magn. Angle(deg) 3.39 38 0.03 -17 3.90 3 0.04 -52 4.30 -31 0.05 -86 4.52 -66 0.06 -122 4.51 -101 0.06 -157 4.33 -135 0.06 166 4.15 -168 0.05 134 4.04 159 0.06 100 3.92 117 0.06 49 3.60 76 0.06 8 2.86 33 0.05 -40 S22 Angle(deg) 26 -1 -30 -67 -106 -137 -165 174 149 165 -115 S11 Magn. Angle(deg) 0.63 88 0.58 47 0.51 1 0.47 -51 0.47 -105 0.50 -152 0.51 166 0.49 123 0.45 61 0.48 -11 0.64 -75 IM3 (dBc) IM3 Magn. 0.59 0.49 0.41 0.32 0.27 0.24 0.23 0.21 0.15 0.05 0.16 MITSUBISHI ELECTRIC June-'04 POWER ADDED EFFICIENCY P.A.E. (%) MITSUBISHI SEMICONDUCTOR MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June-'04 |
Price & Availability of MGFS45V273504
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |