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RB161M-20
Diodes
Schottky barrier diode
RB161M-20
Applications General rectification External dimensions (Unit : mm)
1.60.1 0.150.03
Land size figure
1.2
2.60.1
Features 1) Power mold type. (CPD3) 2) Low VF 3) High reliability Construction Silicon epitaxial planer
3.50.2
0.90.1 0.80.1 0.6
PMDU
0.150.03
00.1
0.80.1
Structure
0.45 0.6
ROHM : PMDU JEDEC : SOD-123 Manufacture Date
Taping dimensions (Unit : mm)
4.00.1 2.00.05 1.750.1 1.550.1 0.05 0.250.05
3.50.05
8.00.2
1.810.05
4.00.1
1.00.2 0
2.80.05
3.710.05
1.050.1
Absolute maximum ratings (Ta=25C) Parameter
Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak Junction temperature Storage temperature
Symbol VRM VR Io IFSM Tj Tstg
Limits 25 20 1 30 125 -40 to +125
Unit V V A A
(*1)Mounted on epoxy board. 180Half sine wave
Electrical characteristic (Ta=25C)
Parameter Forward voltage Reverse current
Symbol VF1 VF2 IR
Min. -
Typ. 0.28 0.31 280
Max. 0.32 0.35 700
Unit V V A
Conditions IF=0.5A IF=1.0A VR=20V
3.05
00.1
0.85
1/3
RB161M-20
Diodes
Electrical characteristic curves
1 Ta=75
REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A)
1000000 Ta=125 100000 10000 1000 100 Ta=-25 10 1 0 200 400 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 600 0 5 10 15 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 20 Ta=75 Ta=25 Ta=-25 Ta=125
1000
f=1MHz
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
0.1
100
Ta=25
0.01
10
0.001
1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30
350
FORWARD VOLTAGE:VF(mV)
1000
REVERSE CURRENT:IR(uA)
Ta=25 IF=1A n=30pcs
400
Ta=25 VR=20V n=30pcs
900 800 700 600 500 400 300 200 100
AVE:283.1uA
390
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
340 330 320 310 300
VF DISPERSION MAP AVE:311.1mV
380 370 360 350 340 330 320 310 300 AVE:351.2pF
Ta=25 f=1MHz VR=0V n=10pcs
0
IR DISPERSION MAP
Ct DISPERSION MAP
150
30
Ifsm
100
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
1cyc 8.3ms
RESERVE RECOVERY TIME:trr(ns)
25 20 15 10 5 0 AVE:11.7ns
100
Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
Ifsm 8.3ms 8.3ms 1cyc
50
50
AVE:65.0A
0
0 1
trr DISPERSION MAP
IFSM DISRESION MAP
10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
100
150
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm
1000
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
1
Mounted on epoxy board Rth(j-a)
0.8
FORWARD POWER DISSIPATION:Pf(W)
t
100
100 Rth(j-c) 10
IM=100mA IF=1A
0.6 0.4 0.2 0
Sin(180)
D=1/2 DC
50
1ms
time
0 0.1
TIME:t(ms) IFSM-t CHARACTERISTICS
1
10
100
1 0.001
300us
0.1
10
1000
0
0.5
1
1.5
2
TIME:t(s) Rth-t CHARACTERISTICS
AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS
2/3
RB161M-20
Diodes
5 4 3 2.5 2 1.5 1 0.5 Sin(180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta() Derating Curve (Io-Ta) 125 0 0 25 50 75 100 CASE TEMPARATURE:Tc() Derating Curve (Io-Tc) 125 DC 0A 0V Io t T 3 VR D=t/T VR=10V Tj=125 2.5 2 1.5 1 0.5 Sin(180) DC 0A 0V Io VR T D=t/T VR=10V Tj=125
AVERAGE RECTIFIDE FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
REVERSE POWER DISSIPATION:PR (W)
t
3 2 DC
D=1/2
D=1/2
D=1/2
1 0 0
Sin(180) 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
30 No break at 30kV 25
ELECTROSTATIC DDISCHARGE TEST ESD(KV)
20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k
AVE:6.90kV
ESD DISPERSION MAP
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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