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| NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 - NOVEMBER 1995 FEATURES * 100 Volt VCEO * 4 Amps continuous current * Up to 10 Amps peak current * Very low saturation voltage * Ptot=1.2 Watts ZTX853 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg 200 100 6 10 4 1.58 1.2 E-Line TO92 Compatible VALUE UNIT V V V A A W W C -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltag Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R 1K IEBO VCE(sat) 14 100 160 960 3-297 MIN. 200 200 100 6 TYP. 300 300 120 8 50 1 50 1 10 50 150 200 1100 MAX. UNIT V V V V nA nA nA mV mV mV mV CONDITIONS. IC=100A IC=1A, RB 1K IC=10mA* IE=100A VCB=150V VCB=150V, Tamb=100C VCB=150V VCB=150V, Tamb=100C VEB=6V IC=0.1A, IB=5mA IC=2A, IB=100mA IC=4A, IB=400mA* IC=4A, IB=400mA* A A VBE(sat) ZTX853 ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times SYMBOL VBE(on) hFE 100 100 50 20 MIN. TYP. 830 200 200 100 30 130 35 50 1650 MAX. 950 300 MHz pF ns ns UNIT V CONDITIONS. IC=4A, VCE=2V* IC=10mA, VCE=2V IC=2A, VCE=2V* IC=4A, VCE=2V* IC=10A, VCE=2V* IC=100mA, VCE=10V f=50MHz VCB=10V, f=1MHz IC=1A, IB!=100mA IB2=100mA, VCC=10V fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% THERMAL CHARACTERISTICS PARAMETER Thermal Resistance: Junction to Ambient Junction to Case SYMBOL Rth(j-amb) Rth(j-case) MAX. 150 50 UNIT C/W C/W Max Power Dissipation - (Watts) 4.0 Thermal Resistance (C/W) 150 t1 D.C. D=t1/tP 3.0 Ca se 100 te tP D=0.6 2.0 m 1.0 Amb ient te mpe ratu -40 -20 0 20 40 pe ra tu re 50 D=0.2 D=0.1 re 60 80 100 120 140 160 180 200 0 0.0001 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-298 ZTX853 TYPICAL CHARACTERISTICS 0.8 1.6 hFE - Normalised Gain 300 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 100 VCE=5V VCE=1V 100 200 0.6 0.4 IC/IB=10 IC/IB=50 0.2 0 0.01 0.1 1 10 100 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC VCE=1V 2.0 2.0 VBE(sat) - (Volts) 1.5 IC/IB=50 1.0 VBE - (Volts) 1.5 1.0 0.5 0.001 0.01 0.1 1 10 100 0.5 0.001 0.01 0.1 1 10 100 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC 10 Single Pulse Test at Tamb=25C VBE(on) v IC IC - Collector Current (Amps) 1 0.1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0.01 0.1 1 10 100 VCE - Collector Voltage (Volts) Safe Operating Area 3-299 hFE - Typical Gain VCE(sat) - (Volts) 1.4 |
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