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| Ordering number:ENN1049E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1253/2SC3135 High-hFE, AF Amp Applications Features * High VEBO. * Wide ASO and high durability against breakdown. Package Dimensions unit:mm 2033A [2SA1253/2SC3135] 4.0 3.0 2.2 0.4 0.5 0.6 1.8 15.0 0.4 0.4 12 1.3 0.7 3 1.3 0.7 ( ) : 2SA1253 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 3.0 3.8 1 : Emitter 2 : Collector 3 : Base SANYO : SPA Ratings (-)60 (-)50 (-)15 (-)200 (-)400 250 150 -55 to +150 Unit V V V mA mA mW C C Electrical Characteristics at Ta = 25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Common Base Output Capacitance Symbol ICBO IEBO hFE fT Cob VCB=(-)40V, IE=0 VEB=(-)10V, IC=0 VCE=(-)6V, IC=(-)1mA VCE=(-)6V, IC=(-)1mA VCB=(-)6V, f=1MHz 100* 100 (3.8) 2.5 Conditions Ratings min typ max (-)0.1 (-)0.1 560* MHz pF Unit A A * : The 2SA1253/2SC3135 are classified by 1mA hFE as follows : Rank hFE R 100 to 200 S 140 to 280 T 200 to 400 U 280 to 560 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73102TN (KT)/71598HA (KT)/3097KI/3135KI/D282KI (KOTO) No.1049-1/4 2SA1253/2SC3135 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol VCE(sat) Conditions IC=(-)50mA, IB=(-)5mA (-)60 (-)50 (-)15 Ratings min typ (-0.2) 0.15 max (-)0.5 Unit V V V V V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO IE=(-)10A, IC=0 --50 IC -- VCE --250 A Collector Current, IC - mA Collector Current, IC - mA 2SA1253 From top --500A --40 --450A --400A --350A --30 --300A 50 IC -- VCE 2SC3135 From top 500A 450A 400A 350A 300A A 250 00A 2 --200A --150A 40 150 A 30 100A --100A --20 20 --50A --10 50A 10 0 0 IB=0 --0.2 --0.4 --0.6 --0.8 --1.0 Collector-to-Emitter Voltage, VCE - V ITR03091 0 0 IB=0 0.2 0.4 0.6 0.8 1.0 ITR03092 Collector-to-Emitter Voltage, VCE - V 20 --20 IC -- VCE A 0 --7 A 0 --6 A 0 --5 IC -- VCE 70A 2SC3135 2SA1253 Collector Current, IC - mA Collector Current, IC - mA --16 16 60A 50A --12 A 0 --4 A --30 12 40A 30A --8 --20 A 8 20A 4 --4 --10A 10A 0 0 IB=0 --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE - V --50 ITR03093 0 0 IB=0 10 20 30 40 50 ITR03094 Collector-to-Emitter Voltage, VCE - V 100 --100 IC -- VBE 2SA1253 VCE=--6V Pulse IC -- VBE 2SC3135 VCE=6V Pulse Collector Current, IC - mA --60 Collector Current, IC - mA --0.4 --0.8 --1.2 Base-to-Emitter Voltage, VBE - V --1.6 ITR03095 --80 80 60 --40 40 --20 20 0 0 0 0 0.4 0.8 1.2 1.6 ITR03096 Base-to-Emitter Voltage, VBE - V No.1049-2/4 2SA1253/2SC3135 1000 hFE -- IC 2SA1253 VCE=--6V Pulse 1000 hFE -- IC 2SC3135 VCE=6V Pulse Common Enitter DC Current Gain, hFE 5 3 2 Common Enitter DC Current Gain, hFE 7 7 5 3 2 100 7 5 3 100 7 5 3 2 0.1 2 5 2 5 2 5 2 100 ITR03098 --0.1 1000 2 2 5 5 --1.0 2 --10 2 Collector Current, IC - mA 5 --100 2 1.0 10 ITR03097 1000 Collector Current, IC - mA fT -- IC 2SA1253 VCE=--6V Pulse fT -- IC 2SC3135 VCE=6V Pulse Gain-Bandwidth Product, fT - MHz Gain-Bandwidth Product, fT - MHz 7 5 3 2 7 5 3 2 100 7 5 3 2 100 7 5 3 2 10 7 --1.0 2 3 5 7 --10 2 3 5 Collector Current, IC - mA 7 --100 2 10 7 1.0 2 3 5 7 10 2 3 5 ITR03099 Collector Current, IC - mA Common Base Output Capacitance, Cob - pF 3 2 7 100 2 ITR03100 Common Base Output Capacitance, Cob - pF 3 2 Cob -- VCB 2SA1253 f=1MHz Cob -- VCB 2SC3135 f=1MHz 10 7 5 10 7 5 3 2 3 2 1.0 5 7 2 3 5 7 --10 2 3 --1.0 Collector-to-Base Voltage, VCB -- V 5 7 --100 1.0 5 7 1.0 2 3 5 7 ITR03101 3 Collector-to-Base Voltage, VCB -- V 10 2 3 5 7 100 ITR03102 3 2 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE (sat) - V 2SA1253 IC / IB=10 VCE(sat) -- IC 2SC3135 IC / IB=10 2 Collector-to-Emitter Saturation Voltage, VCE (sat) - V --1.0 7 5 3 2 1.0 7 5 3 2 --0.1 7 5 3 2 3 2 3 5 5 7 --10 Collector Current, IC - mA 7 2 0.1 7 5 3 1.0 --1.0 --100 2 3 5 7 10 2 3 5 7 ITR03103 Collector Current, IC - mA 2 100 ITR03104 No.1049-3/4 2SA1253/2SC3135 7 5 3 ASO ICP=400mA IC=200mA 2SA1253 / 2SC3135 350 PC -- Ta 2SA1253 / 2SC3135 300 2 10 DC op Collector Dissipation, PC - mW Collector Current, IC - mA 100 7 5 3 2 10 7 5 3 2 0m m 10 s s 250 era 200 tio n 150 100 50 For PNP, minus sign is omitted. 5 7 1.0 2 3 5 7 Collector-to-Emitter Voltage, VCE - V 10 2 3 5 7 100 ITR03105 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta - C ITR03106 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2002. Specifications and information herein are subject to change without notice. PS No.1049-4/4 |
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