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| Transistors 2SD1820A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB1219A I Features * Low collector to emitter saturation voltage VCE(sat) * S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (0.425) 0.3+0.1 -0.0 3 0.15+0.10 -0.05 1.250.10 2.10.1 5 1 2 0.20.1 0 to 0.1 0.90.1 0.9+0.2 -0.1 (0.65) (0.65) 1.30.1 2.00.2 10 I Absolute Maximum Ratings Ta = 25C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 60 50 5 1 500 150 150 -55 to +150 Unit V V V A mA mW C C 1: Base 2: Emitter 3: Collector EIAJ: SC-70 S-Mini Type Package Marking Symbol: X I Electrical Characteristics Ta = 25C 3C Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 Collector to emitter saturation voltage *1 Transition frequency *1 Collector output capacitance Note) *1: Pulse measurement *2: Rank classification Rank hFE1 Marking symbol Q 85 to 170 XQ R 120 to 240 XR S 170 to 340 XS No-rank 85 to 340 X Symbol ICBO VCBO VCEO VEBO hFE1 *2 hFE2 VCE(sat) fT Cob Conditions VCB = 20 V, IE = 0 IC = 10 A, IE = 0 IC = 2 mA, IB = 0 IE = 10 A, IC = 0 VCE = 10 V, IC = 150 mA VCE = 10 V, IC = 500 mA IC = 300 mA, IB = 30 mA VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 60 50 5 85 40 0.35 200 6 15 0.6 V MHz pF 340 Min Typ Max 0.1 Unit A V V V Product of no-rank is not classified and have no indication for rank. 1 2SD1820A PC Ta 240 Transistors IC VCE 800 700 Ta = 25C IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 400 300 200 100 3 mA 2 mA 1 mA 800 700 IC IB VCE = 10 V Ta = 25C Collector power dissipation PC (mW) 200 Collector current IC (mA) Collector current IC (mA) 600 500 600 500 400 300 200 100 0 160 120 80 40 0 0 40 80 120 160 0 0 4 8 12 16 20 0 2 4 6 8 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.01 0.03 -25C Ta = 75C VBE(sat) IC 100 hFE IC 300 VCE = 10 V Base to emitter saturation voltage VBE(sat) (V) IC / IB = 10 IC / IB = 10 Forward current transfer ratio hFE 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta = -25C 75C 250 Ta = 75C 200 25C -25C 150 100 50 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT IE 240 Cob VCB 12 VCER RBE Collector to emitter voltage VCER (V) IE = 0 f = 1 MHz Ta = 25C 120 IC = 2 mA Ta = 25C 100 Transition frequency fT (MHz) 200 Collector output capacitance Cob (pF) VCB = 10 V Ta = 25C 10 160 8 80 120 6 60 80 4 40 40 2 20 0 -1 -2 -3 -5 -10 -20-30 -50 -100 0 0 1 2 3 5 10 20 30 50 100 1 3 10 30 100 300 1 000 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (k) 2 |
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