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Infrared Light Emitting Diodes
LN52
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : PO = 6 mW (typ.) Wide directivity, matched for external optical systems : = 100 deg. Infrared light emission close to monochromatic light : P = 950 nm Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors
o5.35 +0.2 -0.1 o4.2 +0.1 -0.2 3.00.3 12.7 min. 2.00.1 0.20.05
2-o0.450.05
0 1.
5 .1 +0 0.1 -
1. 0 0.
1
45 3
2
1
Absolute Maximum Ratings (Ta = 25C)
2.540.25
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
Symbol PD IF IFP
*
Ratings 160 100 2 3 -25 to +85 -30 to +100
Unit mW mA A V C C
1: Cathode 2: Anode
VR Topr Tstg
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25C)
Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Rise time Fall time Half-power angle Symbol PO P VF IR Ct tr tf Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 3V VR = 0V, f = 1MHz IFP = 100mA
The angle in which radiant intencity is 50%
min 3.5
typ 6 950 50 1.25 50 1 1 100
max
Unit mW nm nm
1.6 10
V A pF s s deg.
1
LN52
Infrared Light Emitting Diodes
IF -- Ta
120 10 2
IFP -- Duty cycle
120 Ta = 25C
IF -- VF
Ta = 25C 100
IF (mA)
IFP (A)
100
Allowable forward current
80
IF (mA) Forward current
1 10 10 2
10
80
Pulse forward current
60
1
60
40
40
10 -1
20
20
0 - 25
0
20
40
60
80
100
10 -2 10 -1
0
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (C )
Duty cycle (%)
Forward voltage VF (V)
IFP -- VF
10 4 120
PO -- IF
Ta = 25C 10 3
PO -- IFP
Ta = 25C (1) tw = 10s Duty Cycle = 0.1% (2) DC (1) 10
IFP (mA)
PO
PO
60
10 3
100 10 2
Relative radiant power
Pulse forward current
10 2
Relative radiant power
80
10
1
(2)
40
1 tw = 10s Duty Cycle = 0.1% Ta = 25C 3 4 5
20
10 -1
10 -1
0
1
2
0
0
20
40
60
80
100
120
10 -2
1
10
10 2
10 3
10 4
Forward voltage VF (V)
Forward current IF (mA)
Pulse forward current IFP (mA)
VF -- Ta
1.6 10
PO -- Ta
IF = 100mA 1000
P -- Ta
IF = 100mA
P (nm) Peak emission wavelength
0 40 80 1 10 -1 - 40
VF (V)
1.2
Relative radiant power
50mA 10mA 1mA 0.8
PO
IF = 100mA
980
960
Forward voltage
940
0.4
920
0 - 40
0
40
80
120
900 - 40
0
40
80
120
Ambient temperature Ta (C )
Ambient temperature Ta (C )
Ambient temperature Ta (C )
2
Infrared Light Emitting Diodes
LN52
Spectral characteristics
100 IF = 100mA Ta = 25C
Directivity characteristics
0 100 80 60 40 10 20 30 40 10 2
Frequency characteristics
Ta = 25C
Relative radiant intensity(%)
Relative radiant intensity (%)
80
50 60 70 80 90 10
60
20
Modulation output
1
40
10 -1 20
0 800
850
900
950
1000 1050 1100
10 -2 10
10 2
10 3
10 4
Wavelength
(nm)
Frequency f (kHz)
3
Caution for Safety
Gallium arsenide material (GaAs) is used in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and afterunpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR

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