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Preliminary
DESCRIPTION
The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
MITSUBISHI SEMICONDUCTOR
MGF0913A
L & S BAND GaAs FET [ SMD non - matched ]
FEATURES
* High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm * High power gain Gp=13dB(TYP.) @f=1.9GHz * High power added efficiency hadd=48%(TYP.) @f=1.9GHz,Pin=18dBm * Hermetic Package
APPLICATION
* For UHF Band power amplifiers
Fig.1
QUALITY
* GG
RECOMMENDED BIAS CONDITIONS
* Vds=10V * Ids=200mA * Rg=500W
Delivery
Tape & Reel
(Ta=25C)
Absolute maximum ratings
Symbol
VGSO ID IGR IGF PT Tch Tstg
Parameter
Gate to sourcebreakdown voltage
Ratings
-15 -15 800 -2.5 5.4 5.0 175 -65 to +175
Unit
V V mA mA mA W C C
VGDO Gate to drain breakdown voltage
Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature
Electrical characteristics
Symbol
IDSS VGS(off) gm Po hadd GLP NF Rth(ch-c)
(Ta=25C)
Parameter
Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Noise figure Thermal Resistance *1
Test conditions
Min. VDS=3V,VGS=0V VDS=3V,ID=2.5mA VDS=3V,ID=300mA VDS=10V,ID=200mA,f=1.9GHz Pin=18dBm VDS=10V,ID=200mA,f=1.9GHz DVf Method 400 -1 29.5 -
Limits
Typ. 550 -3 200 31 48 13 2.0 20 Max. 800 -5 30
Unit
mA V mS dBm % dB dB C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Mitsubishi Electric
July 1999
MGF0913A TYPICAL CHARACTERISTICS
P o ,G p ,P A E v s .P in
35 70
30
25 Gp(dB) ,Po(dBm)
Vds=10V Ids(off)=200mA f=1.9GHz
60
Po
50
PAE
15
Gp
30
10
20
5
10
0 0 5 10 15 20 25 P in (d B m )
0
IM3,Po(SCL) vs. Pi(SCL)
40 30 20 10
VD=10V ID=200mA f1=1.90GHz f2=1.91GHz
0
Po
-10 -20 -30 -40
Po(SCL) (dBm)
10 0 -10 -20 -30 -40 -50 -15 -10 -5 0 5 10 15 20
IM3
-50 -60 -70 -80
Pi(SCL) (dBm)
Mitsubishi Electric
IM3 (dBc)
PAE(%)
20
40
July 1999
MGF0913A
freq. (GHz) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0
S PARAMETERS
S11 Ang(deg) -73.47 -97.92 -115.67 -128.85 -139.02 -147.10 -153.90 -159.90 -165.32 -170.35 -174.98 -179.13 177.13 173.81 170.10 165.88 161.47 157.06 152.35 147.56 142.21 136.15 129.19 120.74 110.58 98.02 82.39 63.23 41.41 19.59 0.50 -14.85 -26.80 -35.64
(Ta=25C,VD=10V,ID=200mA, Reference Plane see Fig.1)
S21 S12 Ang(deg) 128.66 114.45 102.22 91.60 82.38 74.14 66.68 59.82 53.35 47.27 41.17 35.27 29.35 23.33 17.19 11.05 4.68 -1.71 -8.33 -14.97 -21.76 -28.70 -35.69 -42.75 -49.88 -57.08 -64.44 -71.95 -79.70 -87.59 -95.81 -104.58 -114.05 -124.27 Mag 0.035 0.036 0.038 0.041 0.043 0.046 0.048 0.051 0.054 0.057 0.060 0.064 0.066 0.071 0.075 0.080 0.085 0.091 0.098 0.105 0.112 0.120 0.129 0.138 0.148 0.158 0.168 0.179 0.190 0.200 0.211 0.223 0.233 0.244 Ang(deg) 52.26 45.45 40.22 36.20 33.18 30.94 29.18 27.72 26.45 25.17 23.87 22.37 20.75 18.73 16.49 13.95 11.08 7.89 4.37 0.53 -3.56 -8.00 -12.69 -17.65 -22.88 -28.38 -34.04 -40.05 -46.20 -52.79 -59.61 -66.98 -74.95 -83.67 Mag 0.187 0.207 0.228 0.246 0.265 0.283 0.301 0.320 0.338 0.357 0.376 0.395 0.413 0.432 0.450 0.466 0.484 0.499 0.515 0.529 0.541 0.552 0.562 0.569 0.574 0.576 0.575 0.570 0.559 0.542 0.516 0.483 0.438 0.382 S22 Ang(deg) -88.62 -100.26 -108.41 -113.91 -117.47 -119.66 -120.99 -121.71 -122.10 -122.43 -122.87 -123.49 -124.39 -125.60 -127.10 -129.00 -131.10 -133.42 -135.94 -138.55 -141.24 -143.89 -146.56 -149.09 -151.67 -154.13 -156.56 -159.07 -161.78 -164.81 -168.19 -172.11 -176.62 178.34 K 0.37 0.50 0.64 0.77 0.91 1.03 1.14 1.22 1.28 1.33 1.36 1.36 1.39 1.38 1.39 1.39 1.40 1.41 1.42 1.42 1.43 1.42 1.40 1.39 1.35 1.31 1.27 1.23 1.19 1.16 1.14 1.13 1.15 1.21 MSG/MAG (dB) 23.86 22.85 21.87 20.84 19.99 18.13 16.10 14.85 13.85 13.05 12.40 11.88 11.34 10.91 10.43 9.98 9.50 9.03 8.54 8.07 7.61 7.21 6.89 6.61 6.44 6.34 6.30 6.32 6.34 6.33 6.21 5.90 5.25 4.10
Mag 0.876 0.840 0.812 0.789 0.770 0.755 0.743 0.732 0.721 0.710 0.699 0.687 0.673 0.657 0.638 0.617 0.593 0.566 0.536 0.503 0.468 0.430 0.390 0.349 0.308 0.269 0.235 0.212 0.203 0.215 0.243 0.286 0.343 0.411
Mag 8.438 7.023 5.895 5.000 4.296 3.744 3.314 2.981 2.725 2.525 2.368 2.242 2.135 2.043 1.961 1.886 1.816 1.748 1.686 1.629 1.579 1.536 1.504 1.483 1.472 1.472 1.478 1.489 1.497 1.499 1.480 1.434 1.343 1.190
2.0
Gate Mark Round corner (1)
0.80
0.8
Gate Mark
(1) Reference Plane
4.20
(3)
1.20
Reference Plane (2)
4.00
(2)
0.25 2.5
0.6
(1) Gate (2) Drain (3) Source
0.3
B A C K S ID E P A T T E RN
(Unit:mm)
Fig.1 OU T LINE DR A W ING
Mitsubishi Electric July 1999
2.8

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