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 Preliminary
DESCRIPTION
The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers.
MITSUBISHI SEMICONDUCTOR
MGF0916A
L & S BAND GaAs FET [ SMD non - matched ]
FEATURES
* High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm * High power gain Gp=19dB(TYP.) @f=1.9GHz * High power added efficiency add=30%(TYP.) @f=1.9GHz,Pin=5dBm * Hermetic Package
APPLICATION
* For UHF Band power amplifiers
Fig.1
QUALITY
* GG
RECOMMENDED BIAS CONDITIONS
* Vds=6V * Ids=100mA * Rg=1k
Absolute maximum ratings
Symbol
VGSO VGDO ID IGR IGF PT Tch Tstg
(Ta=25C)
Parameter
Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature
Ratings
-8 -8 250 -0.6 1.5 5 175 -65 to +175
Unit
V V mA mA mA W C C
Electrical characteristics
Symbol
IDSS VGS(off) gm Po add GLP NF Rth(ch-c)
(Ta=25C)
Parameter
Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Noise figure Thermal Resistance *1
Test conditions
Min. VDS=3V,VGS=0V VDS=3V,ID=0.1mA VDS=3V,ID=100mA VDS=6V,ID=100mA,f=1.9GHz Pin=5dBm VDS=6V,ID=100mA,f=1.9GHz Vf Method 150 -1.5 -
Limits
Typ. 200 90 23 30 19 1.0 20 Max. 250 -4.5 30
Unit
mA V mS dBm % dB dB C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Mitsubishi Electric
Apr. 1999
MGF0916A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pin
26 24 22 20 Po(dBm) 18 16 14 12 10 8 6 -15 -10 -5 0 Pin(dBm) 5 10 15 Gp PAE 50
VDS=6V ID=0.1A f=1.9GHz
Po
45 40 35 30 25 20 15 10 5 0 PAE(%),Gp(dB)
IM3,Po(SCL) vs. Pi(SCL)
30 20 Po(SCL) (dBm) 10 0 10
VD=6V ID=100mA f1=1.90GHz f2=1.91GHz
Po
0 -10 -20 IM3 (dBc)
IM3
-30 -40 -50 -60 -25 -20 -15 -10 -5 0 5 10 Pi(SCL) (dBm)
-10 -20 -30 -40
Mitsubishi Electric
Apr. 1999
MGF0916A IM3,Po(SCL) vs. Pi(SCL) 60 50 40 30 20 Po 10 0 -10 IM3 -20 -30 IM3(dBc) -40 -50 -60 -70 -30 -20 -10 0 Pi(SCL) (dBm) 10 20 30 40 VD=6V ID=100mA f1=1.90GHz f2=1.91GHz
Po(SCL) (dBm)
Mitsubishi Electric Apr. 1999
MGF0916A S PARAMETERS (Ta=25C, VDS=6V, ID=100mA)
f (GHz)
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6
Mag.
0.986 0.957 0.933 0.913 0.896 0.883 0.872 0.863 0.856 0.850 0.845 0.841 0.837 0.834 0.830 0.827 0.823 0.819 0.814 0.809 0.803 0.796 0.788 0.780 0.770 0.760 0.748 0.736 0.722 0.706 0.690 0.672
S11 Ang.(deg)
-28.50 -41.42 -53.04 -63.45 -72.74 -81.01 -88.32 -94.78 -100.46 -105.45 -109.81 -113.62 -116.95 -119.86 -122.43 -124.70 -126.73 -128.59 -130.31 -131.94 -133.53 -135.11 -136.71 -138.38 -140.12 -141.97 -143.95 -146.06 -148.31 -150.72 -153.28 -155.98
Mag.
7.928 7.350 6.804 6.291 5.813 5.369 4.961 4.587 4.247 3.939 3.663 3.417 3.198 3.006 2.837 2.690 2.562 2.451 2.354 2.271 2.197 2.132 2.074 2.021 1.971 1.925 1.881 1.840 1.801 1.765 1.733 1.708
S21 Ang.(deg)
155.42 144.47 134.61 125.73 117.71 110.45 103.84 97.81 92.27 87.16 82.41 77.96 73.77 69.79 65.99 62.33 58.78 55.32 51.93 48.59 45.28 42.00 38.72 35.44 32.14 28.82 25.47 22.06 18.59 15.04 11.39 7.62
Mag.
0.015 0.019 0.021 0.023 0.024 0.026 0.026 0.027 0.027 0.027 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028
S12 Ang.(deg)
58.78 56.46 53.10 49.04 44.59 40.01 35.49 31.20 27.26 23.76 20.74 18.22 16.21 14.67 13.56 12.83 12.39 12.18 12.09 12.07 12.01 11.84 11.51 10.95 10.15 9.07 7.73 6.18 4.48 2.74 1.11 -0.24
Mag.
0.459 0.477 0.493 0.509 0.524 0.540 0.555 0.570 0.585 0.601 0.617 0.633 0.649 0.665 0.680 0.696 0.711 0.726 0.740 0.754 0.766 0.778 0.789 0.799 0.808 0.816 0.824 0.831 0.838 0.844 0.851 0.859
S22 Ang.(deg)
-27.52 -38.99 -48.75 -57.06 -64.14 -70.20 -75.42 -79.95 -83.94 -87.48 -90.68 -93.61 -96.34 -98.91 -101.37 -103.72 -106.00 -108.20 -110.33 -112.38 -114.34 -116.21 -117.97 -119.62 -121.16 -122.57 -123.87 -125.07 -126.19 -127.27 -128.34 -129.47
K
0.21 0.31 0.38 0.44 0.50 0.57 0.63 0.69 0.74 0.80 0.84 0.88 0.91 0.93 0.94 0.94 0.94 0.92 0.90 0.88 0.86 0.85 0.84 0.83 0.84 0.86 0.89 0.92 0.96 1.00 1.04 1.06
MSG/MAG (dB)
27.09 25.97 25.09 24.37 23.76 23.22 22.75 22.32 21.92 21.56 21.23 20.92 20.63 20.36 20.11 19.89 19.68 19.48 19.30 19.14 18.99 18.85 18.73 18.61 18.50 18.39 18.29 18.19 18.10 17.61 16.70 16.35
Mitsubishi Electric
Apr. 1999


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