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| Preliminary DESCRIPTION The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. MITSUBISHI SEMICONDUCTOR MGF0916A L & S BAND GaAs FET [ SMD non - matched ] FEATURES * High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm * High power gain Gp=19dB(TYP.) @f=1.9GHz * High power added efficiency add=30%(TYP.) @f=1.9GHz,Pin=5dBm * Hermetic Package APPLICATION * For UHF Band power amplifiers Fig.1 QUALITY * GG RECOMMENDED BIAS CONDITIONS * Vds=6V * Ids=100mA * Rg=1k Absolute maximum ratings Symbol VGSO VGDO ID IGR IGF PT Tch Tstg (Ta=25C) Parameter Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature Ratings -8 -8 250 -0.6 1.5 5 175 -65 to +175 Unit V V mA mA mA W C C Electrical characteristics Symbol IDSS VGS(off) gm Po add GLP NF Rth(ch-c) (Ta=25C) Parameter Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Noise figure Thermal Resistance *1 Test conditions Min. VDS=3V,VGS=0V VDS=3V,ID=0.1mA VDS=3V,ID=100mA VDS=6V,ID=100mA,f=1.9GHz Pin=5dBm VDS=6V,ID=100mA,f=1.9GHz Vf Method 150 -1.5 - Limits Typ. 200 90 23 30 19 1.0 20 Max. 250 -4.5 30 Unit mA V mS dBm % dB dB C/W *1:Channel to case / Above parameters, ratings, limits are subject to change. Mitsubishi Electric Apr. 1999 MGF0916A TYPICAL CHARACTERISTICS Po,Gp,PAE vs.Pin 26 24 22 20 Po(dBm) 18 16 14 12 10 8 6 -15 -10 -5 0 Pin(dBm) 5 10 15 Gp PAE 50 VDS=6V ID=0.1A f=1.9GHz Po 45 40 35 30 25 20 15 10 5 0 PAE(%),Gp(dB) IM3,Po(SCL) vs. Pi(SCL) 30 20 Po(SCL) (dBm) 10 0 10 VD=6V ID=100mA f1=1.90GHz f2=1.91GHz Po 0 -10 -20 IM3 (dBc) IM3 -30 -40 -50 -60 -25 -20 -15 -10 -5 0 5 10 Pi(SCL) (dBm) -10 -20 -30 -40 Mitsubishi Electric Apr. 1999 MGF0916A IM3,Po(SCL) vs. Pi(SCL) 60 50 40 30 20 Po 10 0 -10 IM3 -20 -30 IM3(dBc) -40 -50 -60 -70 -30 -20 -10 0 Pi(SCL) (dBm) 10 20 30 40 VD=6V ID=100mA f1=1.90GHz f2=1.91GHz Po(SCL) (dBm) Mitsubishi Electric Apr. 1999 MGF0916A S PARAMETERS (Ta=25C, VDS=6V, ID=100mA) f (GHz) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 Mag. 0.986 0.957 0.933 0.913 0.896 0.883 0.872 0.863 0.856 0.850 0.845 0.841 0.837 0.834 0.830 0.827 0.823 0.819 0.814 0.809 0.803 0.796 0.788 0.780 0.770 0.760 0.748 0.736 0.722 0.706 0.690 0.672 S11 Ang.(deg) -28.50 -41.42 -53.04 -63.45 -72.74 -81.01 -88.32 -94.78 -100.46 -105.45 -109.81 -113.62 -116.95 -119.86 -122.43 -124.70 -126.73 -128.59 -130.31 -131.94 -133.53 -135.11 -136.71 -138.38 -140.12 -141.97 -143.95 -146.06 -148.31 -150.72 -153.28 -155.98 Mag. 7.928 7.350 6.804 6.291 5.813 5.369 4.961 4.587 4.247 3.939 3.663 3.417 3.198 3.006 2.837 2.690 2.562 2.451 2.354 2.271 2.197 2.132 2.074 2.021 1.971 1.925 1.881 1.840 1.801 1.765 1.733 1.708 S21 Ang.(deg) 155.42 144.47 134.61 125.73 117.71 110.45 103.84 97.81 92.27 87.16 82.41 77.96 73.77 69.79 65.99 62.33 58.78 55.32 51.93 48.59 45.28 42.00 38.72 35.44 32.14 28.82 25.47 22.06 18.59 15.04 11.39 7.62 Mag. 0.015 0.019 0.021 0.023 0.024 0.026 0.026 0.027 0.027 0.027 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 0.028 S12 Ang.(deg) 58.78 56.46 53.10 49.04 44.59 40.01 35.49 31.20 27.26 23.76 20.74 18.22 16.21 14.67 13.56 12.83 12.39 12.18 12.09 12.07 12.01 11.84 11.51 10.95 10.15 9.07 7.73 6.18 4.48 2.74 1.11 -0.24 Mag. 0.459 0.477 0.493 0.509 0.524 0.540 0.555 0.570 0.585 0.601 0.617 0.633 0.649 0.665 0.680 0.696 0.711 0.726 0.740 0.754 0.766 0.778 0.789 0.799 0.808 0.816 0.824 0.831 0.838 0.844 0.851 0.859 S22 Ang.(deg) -27.52 -38.99 -48.75 -57.06 -64.14 -70.20 -75.42 -79.95 -83.94 -87.48 -90.68 -93.61 -96.34 -98.91 -101.37 -103.72 -106.00 -108.20 -110.33 -112.38 -114.34 -116.21 -117.97 -119.62 -121.16 -122.57 -123.87 -125.07 -126.19 -127.27 -128.34 -129.47 K 0.21 0.31 0.38 0.44 0.50 0.57 0.63 0.69 0.74 0.80 0.84 0.88 0.91 0.93 0.94 0.94 0.94 0.92 0.90 0.88 0.86 0.85 0.84 0.83 0.84 0.86 0.89 0.92 0.96 1.00 1.04 1.06 MSG/MAG (dB) 27.09 25.97 25.09 24.37 23.76 23.22 22.75 22.32 21.92 21.56 21.23 20.92 20.63 20.36 20.11 19.89 19.68 19.48 19.30 19.14 18.99 18.85 18.73 18.61 18.50 18.39 18.29 18.19 18.10 17.61 16.70 16.35 Mitsubishi Electric Apr. 1999 |
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