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28C16A
16K (2K x 8) CMOS EEPROM
FEATURES
* Fast Read Access Time--150 ns * CMOS Technology for Low Power Dissipation - 30 mA Active - 100 A Standby * Fast Byte Write Time--200 s or 1 ms * Data Retention >200 years * High Endurance - Minimum 104 Erase/Write Cycles * Automatic Write Operation - Internal Control Timer - Auto-Clear Before Write Operation - On-Chip Address and Data Latches * Data polling * Chip Clear Operation * Enhanced Data Protection - VCC Detector - Pulse Filter - Write Inhibit * Electronic Signature for Device Identification * 5-Volt-Only Operation * Organized 2Kx8 JEDEC Standard Pinout * 24-pin Dual-In-Line Package * 32-pin PLCC Package * Available for Extended Temperature Ranges: - Commercial: 0C to +70C - Industrial: -40C to +85C
PACKAGE TYPES
32 Vcc 31 WE 18 19 4 A7 3 NC 2 NC 1 NU
* Pin 1 indicator on PLCC on top of package
BLOCK DIAGRAM
I/O0 I/O7
VSS VCC
CE
OE
WE
Data Protection Circuitry Chip Enable/ Output Enable Control Logic
Auto Erase/Write Timing
Data Poll
Program Voltage Generation A0
DESCRIPTION
The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. During a "byte write", the address and data are latched internally, freeing the microprocessor address and data bus for other operations. Following the initiation of write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control timer. To determine when a write cycle is complete, the 28C16A uses Data polling. Data polling allows the user to read the location last written to when the write operation is complete. CMOS design and processing enables this part to be used in systems where reduced power consumption and reliability are required. A complete family of packages is offered to provide the utmost flexibility in applications.
A10
L a t c h e s
Y Decoder
X Decoder
(c) 1998 Microchip Technology Inc.
I/O1 I/O2 Vss NU I/O3 I/O4 I/O5
A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS
*1 2 3 4 5 6 7 8 9 10 11 12
24 23 22 21 20 19 18 17 16 15 14 13
Vcc A8 A6 A9 A5 WE A4 OE A3 A10 A2 CE A1 I/O7 A0 I/O6 NC I/O5 I/O0 I/O4 I/O3
30 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 21 I/O6 20
5 6 7
PLCC
8 9 10 11 12 13 14 15 16
Input/Output Buffers
16K bit Cell Matrix
17
DIP
Y Gating
DS11125I-page 1
28C16A
1.0
1.1
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS*
TABLE 1-1:
Name A0 - A10 CE OE WE I/O0 - I/O7 VCC VSS NC NU
PIN FUNCTION TABLE
Function Address Inputs Chip Enable Output Enable Write Enable Data Inputs/Outputs +5V Power Supply Ground No Connect; No Internal Connection Not Used; No External Connection is Allowed
VCC and input voltages w.r.t. VSS ....... -0.6V to + 6.25V Voltage on OE w.r.t. VSS ...................... -0.6V to +13.5V Voltage on A9 w.r.t. VSS ....................... -0.6V to +13.5V Output Voltage w.r.t. VSS..................-0.6V to VCC+0.6V Storage temperature .......................... -65C to +125C Ambient temp. with power applied........ -50C to +95C
*Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
TABLE 1-2:
READ/WRITE OPERATION DC CHARACTERISTICS
VCC = +5V 10% Commercial (C): Tamb = 0C to Industrial (I): Tamb = -40C to +70C +85C Conditions
Parameter Input Voltages Input Leakage Input Capacitance Output Voltages Output Leakage Output Capacitance Power Supply Current, Active Power Supply Current, Standby
Status Logic `1' Logic `0; -- -- Logic `1' Logic `0' -- -- TTL input TTL input TTL input CMOS input
Symbol VIH VIL ILI CIN VOH VOL ILO COUT ICC ICC(S)TTL ICC(S)TTL ICC(S)CMOS
Min 2.0 -0.1 -10 -- 2.4
Max VCC+1 0.8 10 10
Units V V A pF V V A pF mA mA mA A
VIN = -0.1V to VCC+1 VIN = 0V; Tamb = 25C; f = 1 MHz IOH = -400A IOL = 2.1 mA VOUT = -0.1V to VCC+0.1V VIN = 0V; Tamb = 25C; f = 1 MHz f = 5 MHz (Note 1) VCC = 5.5V; CE = VIH (0C to +70C) CE = VIH (-40C to +85C) CE = VCC-0.3 to VCC+1 OE = VCC Other inputs equal VCC or VSS
0.45 -10 -- -- -- 10 12 30 2 3 100
Note 1:
AC power supply current above 5 MHz; 1 mA/MHz.
DS11125I-page 2
(c) 1998 Microchip Technology Inc.
28C16A
TABLE 1-3: READ OPERATION AC CHARACTERISTICS
AC Testing Waveform: Output Load: Input Rise and Fall Times: Ambient Temperature: 28C16A-15 Parameter Address to Output Delay CE to Output Delay OE to Output Delay CE or OE High to Output Float Output Hold from CE or OE, whichever occurs first Endurance Sym Min tACC tCE tOE tOFF tOH -- -- -- -- 0 0 1M Max 150 150 70 50 -- -- Min -- -- -- 0 0 1M Max 200 200 80 55 -- -- Min -- -- -- 0 0 1M Max 250 250 100 70 -- -- ns ns ns ns ns cycles 25C, Vcc = 5.0V, Block Mode (Note) OE = CE = VIL OE = VIL CE = VIL VIH = 2.4V; VIL = 0.45V; VOH = 2.0V; Vol = 0.8V 1 TTL Load + 100pF 20 ns Commercial (C): Tamb = 0C to +700C Industrial (I): Tamb = -40C to +85C 28C16A-20 28C16A-25 Units Conditions
Note: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific application, please consult the Total Endurance Model which can be obtained on our BBS or website.
FIGURE 1-1:
READ WAVEFORMS
VIH Address VIL VIH CE VIL tCE(2) Address Valid
VIH OE VIL VOH Data VOL WE VIH VIL Notes: (1) tOFF is specified for OE or CE, whichever occurs first (2) OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE (3) This parameter is sampled and is not 100% tested tACC tOE(2) High Z tOFF(1,3) tOH Valid Output High Z
(c) 1998 Microchip Technology Inc.
DS11125I-page 3
28C16A
TABLE 1-4: BYTE WRITE AC CHARACTERISTICS
AC Testing Waveform: Output Load: Input Rise/Fall Times: Ambient Temperature: Parameter Address Set-Up Time Address Hold Time Data Set-Up Time Data Hold Time Write Pulse Width Write Pulse High Time OE Hold Time OE Set-Up Time Data Valid Time Write Cycle Time (28C16A) Write Cycle Time (28C16AF) Symbol tAS tAH tDS tDH tWPL tWPH tOEH tOES tDV tWC tWC Min 10 50 50 10 100 50 10 10 -- -- -- VIH = 2.4V and VIL = 0.45V; VOH = 2.0V; VOL = 0.8V 1 TTL Load + 100 pF 20 ns Commercial (C): Tamb = 0C to +70C Industrial (I): Tamb = -40C to +85C Max -- -- -- -- -- -- -- -- 1000 1 200 Units ns ns ns ns ns ns ns ns ns ms s Note 2 0.5 ms typical 100 s typical Note 1 Remarks
Note 1: A write cycle can be initiated be CE or WE going low, whichever occurs last. The data is latched on the positive edge of CE or WE, whichever occurs first. 2: Data must be valid within 1000ns max. after a write cycle is initiated and must be stable at least until tDH after the positive edge of WE or CE, whichever occurs first.
FIGURE 1-2:
PROGRAMMING WAVEFORMS
VIH
Address VIL VIH CE, WE VIL tDV Data In VIH VIL tOES VIH OE VIL tOEH tDS tAS tAH tWPL tDH
DS11125I-page 4
(c) 1998 Microchip Technology Inc.
28C16A
FIGURE 1-3: DATA POLLING WAVEFORMS
VIH
Address VIL Address Valid t ACC t CE t WPH
Last Written Address Valid
VIH
CE VIL
VIH
WE VIL
t WPL t OE
VIH
OE VIL
t DV VIH
Data VIL Data In Valid t WC I/O7 Out True Data Out
FIGURE 1-4:
CHIP CLEAR WAVEFORMS
VIH CE VIL VH OE VIH VIH WE VIL tW = 10ms tS = tH = 1s VH = 12.0V 0.5V tS tW tH
TABLE 1-5:
Mode Chip Clear Extra Row Read Extra Row Write
SUPPLEMENTARY CONTROL
CE VIL VIL * OE VH VIL VIH WE VIL VIH * A9 X A9 = VH A9 = VH VCC VCC VCC VCC Data Out Data In I/OI
Note 1: VH = 12.0V0.5V
* Pulsed per programming waveforms.
(c) 1998 Microchip Technology Inc.
DS11125I-page 5
28C16A
2.0 DEVICE OPERATION
2.4 Write Mode
The Microchip Technology Inc. 28C16A has four basic modes of operation--read, standby, write inhibit, and byte write--as outlined in the following table. Operation Mode Read Standby Write Inhibit Write Inhibit Write Inhibit Byte Write Byte Clear CE L H H X X L OE L X X L X H WE H X X X H L I/O DOUT High Z High Z High Z High Z DIN The 28C16A has a write cycle similar to that of a Static RAM. The write cycle is completely self-timed and initiated by a low going pulse on the WE pin. On the falling edge of WE, the address information is latched. On rising edge, the data and the control pins (CE and OE) are latched.
2.5
Data Polling
Automatic Before Each "Write"
The 28C16A features Data polling to signal the completion of a byte write cycle. During a write cycle, an attempted read of the last byte written results in the data complement of I/O7 (I/O0 to I/O6 are indeterminable). After completion of the write cycle, true data is available. Data polling allows a simple read/compare operation to determine the status of the chip eliminating the need for external hardware.
X = Any TTL level.
2.6
2.1
Read Mode
Electronic Signature for Device Identification
The 28C16A has two control functions, both of which must be logically satisfied in order to obtain data at the outputs. Chip enable (CE) is the power control and should be used for device selection. Output Enable (OE) is the output control and is used to gate data to the output pins independent of device selection. Assuming that addresses are stable, address access time (tACC) is equal to the delay from CE to output (tCE). Data is available at the output tOE after the falling edge of OE, assuming that CE has been low and addresses have been stable for at least tACC-tOE.
An extra row of 32 bytes of EEPROM memory is available to the user for device identification. By raising A9 to 12V 0.5V and using address locations 7EO to 7FF, the additional bytes can be written to or read from in the same manner as the regular memory array.
2.7
Chip Clear
All data may be cleared to 1's in a chip clear cycle by raising OE to 12 volts and bringing the WE and CE low. This procedure clears all data, except for the extra row.
2.2
Standby Mode
The 28C16A is placed in the standby mode by applying a high signal to the CE input. When in the standby mode, the outputs are in a high impedance state, independent of the OE input.
2.3
Data Protection
In order to ensure data integrity, especially during critical power-up and power-down transitions, the following enhanced data protection circuits are incorporated: First, an internal VCC detect (3.3 volts typical) will inhibit the initiation of non-volatile programming operation when VCC is less than the VCC detect circuit trip. Second, there is a WE filtering circuit that prevents WE pulses of less than 10 ns duration from initiating a write cycle. Third, holding WE or CE high or OE low, inhibits a write cycle during power-on and power-off (VCC).
DS11125I-page 6
(c) 1998 Microchip Technology Inc.
28C16A
28C16A Product Identification System
To order or to obtain information, e.g., on pricing or delivery, please use the listed part numbers, and refer to the factory or the listed sales offices.
28C16A F T - 15 I /P
Package: Temperature Range: Access Time: L = Plastic Leaded Chip Carrier (PLCC) P = Plastic DIP (600 mil) Blank = 0C to +70C I = -40C to +85C 15 20 25 Blank T 150 ns 200 ns 250 ns Tube Tape and Reel "L" only
Shipping: Option: Device:
Blank = twc = 1ms F = twc = 200 s 28C16A 2K x 8 CMOS EEPROM
(c) 1998 Microchip Technology Inc.
DS11125I-page 7
M
WORLDWIDE SALES AND SERVICE
AMERICAS
Corporate Office
Microchip Technology Inc. 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 602-786-7200 Fax: 602-786-7277 Technical Support: 602 786-7627 Web: http://www.microchip.com
AMERICAS (continued)
Toronto
Microchip Technology Inc. 5925 Airport Road, Suite 200 Mississauga, Ontario L4V 1W1, Canada Tel: 905-405-6279 Fax: 905-405-6253
ASIA/PACIFIC (continued)
Singapore
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ASIA/PACIFIC
Hong Kong
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Boston
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EUROPE
United Kingdom
Arizona Microchip Technology Ltd. 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44-1189-21-5858 Fax: 44-1189-21-5835
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Dallas
Microchip Technology Inc. 14651 Dallas Parkway, Suite 816 Dallas, TX 75240-8809 Tel: 972-991-7177 Fax: 972-991-8588
Dayton
Microchip Technology Inc. Two Prestige Place, Suite 150 Miamisburg, OH 45342 Tel: 937-291-1654 Fax: 937-291-9175
Korea
Microchip Technology Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea Tel: 82-2-554-7200 Fax: 82-2-558-5934
Germany
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Detroit
Microchip Technology Inc. 42705 Grand River, Suite 201 Novi, MI 48375-1727 Tel: 248-374-1888 Fax: 248-374-2874
Italy
Arizona Microchip Technology SRL Centro Direzionale Colleoni Palazzo Taurus 1 V. Le Colleoni 1 20041 Agrate Brianza Milan, Italy Tel: 39-39-6899939 Fax: 39-39-6899883 9/8/98
Shanghai
Microchip Technology RM 406 Shanghai Golden Bridge Bldg. 2077 Yan'an Road West, Hong Qiao District Shanghai, PRC 200335 Tel: 86-21-6275-5700 Fax: 86 21-6275-5060
Los Angeles
Microchip Technology Inc. 18201 Von Karman, Suite 1090 Irvine, CA 92612 Tel: 714-263-1888 Fax: 714-263-1338
New York
Microchip Technology Inc. 150 Motor Parkway, Suite 202 Hauppauge, NY 11788 Tel: 516-273-5305 Fax: 516-273-5335
San Jose
Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408-436-7950 Fax: 408-436-7955
Microchip received ISO 9001 Quality System certification for its worldwide headquarters, design, and wafer fabrication facilities in January, 1997. Our field-programmable PICmicroTM 8-bit MCUs, Serial EEPROMs, related specialty memory products and development systems conform to the stringent quality standards of the International Standard Organization (ISO).
All rights reserved. (c) 1998 Microchip Technology Incorporated. Printed in the USA. 9/98
Printed on recycled paper.
Information contained in this publication regarding device applications and the like is intended for suggestion only and may be superseded by updates. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip's products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. The Microchip logo and name are registered trademarks of Microchip Technology Inc. in the U.S.A. and other countries. All rights reserved. All other trademarks mentioned herein are the property of their respective companies.
DS11125I-page 8
(c) 1998 Microchip Technology Inc.

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