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| Ordering number:ENN4657 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode FP303 DC-DC Converter Applications Features * Composite type with NPN transistor and Schottoky barrier diode facilitates high-density mounting. * The FP303 is composed of chips equivalent to the 2SD1623 and SB05-05CP, which are placed in one package. Package Dimensions unit:mm 2099A [FP303] 4.5 3.4 2.8 0.5 1.8 0.5 7 6 1.0 0.5 1.5 0.4 4.25max 0.5 1.57 2.5 0.2min 5 1.75 4 3 2 1 0.3 0 to 0.1 0.2 1.75 3.5 1.2 1:Base 2:Collector 3:Emitter 4:Cathode 5:Anode 6:Cathode 7:Collector SANYO:PCP5 (Bottom view) 1.0 Specifications Absolute Maximum Ratings at Ta = 25C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 50 55 500 5 -55 to +125 -55 to +125 V V mA A C C VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on ceramic board (250mm2x0.8mm) 60 50 6 2 4 400 0.8 150 -55 to +150 V V V A A mA W C C Symbol Conditions Ratings Unit Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72701TN(KT)/52098HA (KT)/N2394TS (KOTO) B8-0025 No.4657-1/5 0.7 FP303 Electrical Connection 7 6 2 1 3 4 5 1:Base 2:Collector 3:Emitter Common 4:Cathode 5:Anode 6:Cathode 7:Collector (Top View) Electrical Characteristics at Ta=25C Parameter [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Turn-ON Time Storage Time Fall Time [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance VR VF IR C trr Rthj-a IR=200A IF=500mA VR=25V VR=10V, f=1MHz IF=IR=100mA, See sepcified Test Circuit. Mounted on ceramic board (250mm2x0.8mm) 22 10 170 50 0.55 50 V V A pF ns C/W ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) VCB=50V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100mA VCE=2V, IC=1.5A VCE=10V, IC=50mA VCE=10V, f=1MHz IC=1.0A, IB=50mA IC=1.0A, IB=50mA 60 50 6 60 550 30 140 40 150 12 0.15 0.9 0.4 1.2 MHz pF V V V V V ns ns ns 0.1 0.1 560 A A Symbol Conditons Ratings min typ max Unit V(BR)CBO IC=10A, IE=0 V(BR)CEO IC=1mA, RBE= V(BR)EBO ton tstg tf IE=10A, IC=0 See specified Test Circuit See specified Test Circuit See specified Test Circuit Marking:303 Switching Time Test Circuit [TR] PW=20s D.C.1% INPUT IB1 OUTPUT IB2 VR 50 + 100F VBE= --5V + 470F VCC=25V RB RL 50 [SBD] Duty10% 100mA 10mA trr 10s --5V 10IB1= --10IB2=IC=500mA 100mA 50 100 10 No.4657-2/5 FP303 2.4 IC -- VCE 50m A [TR] 1.2 IC -- VCE 7mA [TR] 2.0 Collector Current, IC - A 1.6 1 0mA Collector Current, IC - A 20mA 1.0 6mA 5mA 0.8 4mA 3mA 2mA 1.2 8mA 6mA 0.6 0.8 4mA 0.4 0.4 2mA 1mA 0.2 0 0 0.4 0.8 1.2 1.6 IB=0 2.0 2.4 ITR11096 0 0 2 4 6 8 IB=0 10 12 ITR11097 Collector-to-Emitter Voltage, VCE - V 2.4 IC -- VBE Collector-to-Emitter Voltage, VCE - V 1000 7 [TR] VCE=2V hFE -- IC [TR] VCE=2V 2.0 5 Collector Current, IC - A DC Current Gain,hFE 1.6 3 2 Ta=75C 25C --25C 1.2 100 7 5 0.8 Ta= 7 0.4 5C 25C --25 C 3 2 1.0 1.2 ITR11098 0 0 0.2 0.4 0.6 0.8 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Base-to-Emitter Voltage, VBE - V 1000 f T -- IC Collector Current, IC - A 100 7 ITR11099 [TR] VCB=10V Output Capacitance, Cob - pF Cob -- VCB [TR] f=1MHz Gain-Bandwidth Product, f T - MHz 7 5 3 2 5 3 100 7 5 3 2 2 10 7 10 10 2 3 5 7 100 2 3 5 7 1000 2 3 5 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC - mA 1000 7 ITR11100 Collector-to-Base Voltage, VCB - V 10 ITR11101 VCE(sat) -- IC [TR] Base-to-Emitter Saturation Voltage, VBE (sat) - V VBE(sat) -- IC [TR] IC / IB=20 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -mV 7 5 5 3 2 3 2 100 7 5 3 2 25 C 1.0 7 5 Ta= --25C 25C C Ta=75 C --25 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 75C 10 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC - A ITR11102 Collector Current, IC - A ITR11103 No.4657-3/5 FP303 5 3 2 ASO IC ICP 10 [TR] 1m ms s 30 0 s Collector Dissipation, PC - W 1.0 PC -- Ta [TR] Collector Current, IC - A 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 2 0.8 M DC ou nt op ed era 0.6 on tio n ac er am ic 0.4 bo ar d( 25 0m Ta=25C Single pulse Mounted on a ceramic board (250mm2x0.8mm) 3 5 7 1.0 2 3 5 7 10 2 3 5 7 0.2 m2 x0 .8m m ) 160 0 0 20 ITR11104 Collector-to-Emitter Voltage, VCE - V 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 0 0.1 0.2 0.3 0.4 0.5 Ambient Temperature, Ta - C 3 2 1000 5 3 2 100 5 3 2 10 5 3 2 1.0 5 3 2 0.1 5 3 40 60 80 100 120 140 ITR11105 IF -- VF [SBD] IR -- VR Ta=125 C [SBD] Reverse Current,IR - A Forward Current, IF - A 100C 75C 50C 25 C C 75 Ta= 1 --25 25 C C 25C 0.6 0.7 0 10 20 30 40 50 60 ITR11107 Forward Voltage, VF - V 2 ITR11106 C -- VR Reverse Voltage, VR - V 7 [SBD] f=1MHz Surge Forward Current,Is(Peak) - A IS -- t [SBD] Current waveform 50Hz sine wave 6 Interterminal Capacitance,C -pF 100 7 5 3 2 IS 5 20ms t 4 3 10 7 5 3 7 1.0 2 3 5 7 10 2 3 5 2 1 0 Reverse Voltage, VR - V 100 ITR11108 7 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time,t - s ITR11109 No.4657-4/5 FP303 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2001. Specifications and information herein are subject to change without notice. PS No.4657-5/5 |
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