 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SK1968 Silicon N-Channel MOS FET ADE-208-1337 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features * * * * * Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Low drive current Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1968 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 600 30 12 48 12 100 150 -55 to +150 Unit V V A A A W C C 2SK1968 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 600 30 -- -- 2.0 -- 5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.68 10 1800 400 60 25 70 145 65 1.1 670 Max -- -- 10 250 3.0 0.88 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V ns I F = 12 A, VGS = 0 I F = 12 A, VGS = 0, diF / dt = 100 A / s Unit V V A A V Test conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 500 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 6 A VGS = 10 V*1 ID = 6 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 6 A VGS = 10 V RL = 5 Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2SK1968 Power vs. Temperature Derating 200 Pch (W) Maximum Safe Operation Area 100 30 10 10 10 0 s 150 (A) s Power Dissipation 100 50 Drain Current 1m DC PW s Op = 1 er 0 m at s( 3 ion 1 (T sho c = t) in this 1 Operationby R area 25 is limited DS(on) C ) ID 0.3 0.1 5 Ta = 25C 10 30 100 Drain to Source Voltage 300 1000 V DS (V) 0 50 100 Case Temperature 150 Tc (C) 200 Typical Output Characteristics 20 10 V (A) 16 6V 5V Pulse test (A) Typical Transfer Characteristics 20 Pulse test VDS = 20 V 16 ID ID Drain Current 12 4.5 V 8 12 Tc = 75C 8 25C -25C 4 Drain Current 4 VGS = 4 V 0 10 20 30 Drain to Source Voltage 40 50 V DS (V) 0 2 4 6 8 10 Gate to Source Voltage V GS (V) 2SK1968 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) 20 Pulse test Static Drain to Source on State Resistance vs. Drain Current 5 16 15 A 12 Static Drain to Source on State Resistance R DS(on) ( ) 2 1 0.5 VGS = 10 V 8 10 A ID=5A 4 0.2 Pulse test 0.1 1 2 5 10 Drain Current 20 50 I D (A) 100 0 4 8 12 16 20 Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance R DS(on) ( ) Static Drain to Source on State Resistance vs. Temperature Pulse test VGS = 10 V 1.6 Forward Transfer Admittance |y fs | (S) 2.0 50 Forward Transfer Admittance vs. Drain Current Pulse test V DS = 20 V 20 10 5 Tc = -25C 25C 75C 1.2 10 A 0.8 ID = 5 A 2 1 0.5 0.1 0.2 0.4 0 -40 0 40 80 120 160 Gate to Source Voltage V GS (V) 0.5 1 2 5 10 Drain Current I D (A) 20 2SK1968 Body to Drain Diode Reverse Recovery Time 3000 t rr (ns) 2000 (pF) di/dt = 100 A/s V GS = 0, Ta = 25C 5000 2000 1000 500 200 100 50 20 100 0.1 0.2 0.5 1 2 Reverse Drain Current 5 10 20 I DR (A) 10 0 Crss 10 20 30 Drain to Source Voltage 40 50 V DS (V) VGS = 0 f = 1 MHz Coss Ciss Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time 500 200 Capacitance C 1000 Dynamic Input Characteristics 1000 V DS (V) VGS 16 V GS (V) I D = 12 A VDD = 100 V 250 V 400 V 20 300 200 (ns) Switching Characteristics 800 td(off) Gate to Source Voltage Drain to Source Voltage 600 VDS 12 Switching Time t 100 tf tr 20 10 0.1 0.2 VGS = 10 V, PW = 5 s duty 1 %, VDD 30 V 0.5 1 2 5 10 Drain Current I D (A) 20 td(on) 50 400 8 VDD = 400 V 250 V 100 V 20 40 Gate Charge 60 Qg 80 (nc) 200 4 0 100 0 2SK1968 Reverse Drain Current vs. Source to Drain Voltage 20 I DR (A) Reverse Drain Current Pulse test 16 12 VGS = 0, -5 V 10 V 8 4 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 V SD (V) Normal Transient Thermal Impedance vs. Pusle Width 3 Normalized Transient Thermal Impedance s (t) 1 D=1 0.5 0.2 0.1 0.3 0.1 0.05 0.02 0.0 1 ch - c(t) = s (t) * ch - c ch - c = 1.25 C/W, Tc = 25 C PDM D= PW T 0.03 h 1s P ot uls e PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 2SK1968 Switching Time Test Circuit and Waveform 90% Vin Monitor D.U.T. RL Vout Vin 10 V 50 V DD = 30 V t d(on) 10% 10% Vout Monitor Vin 10% 90% tr 90% t d(off) tf 2SK1968 Package Dimensions As of January, 2001 5.0 0.3 15.6 0.3 1.0 3.2 0.2 4.8 0.2 1.5 Unit: mm 0.5 14.9 0.2 19.9 0.2 1.6 1.4 Max 2.0 2.8 18.0 0.5 1.0 0.2 2.0 0.6 0.2 3.6 0.9 1.0 5.45 0.5 5.45 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) TO-3P -- Conforms 5.0 g 0.3 2SK1968 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 This datasheet has been download from: www..com Datasheets for electronics components. |
Price & Availability of 2SK1968
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |