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TLN233
TOSHIBA Infrared LED GaAAs Infrared Emitter
TLN233
Infrared LED for Space-Optical-Transmission
Unit: mm High radiant intensity: 80 mW/sr (typ.) at IF = 50 mA Half-angle value: 1/2 = 13 (typ.) A light source for remote control Wireless AV-signal transmission purpose High speed data transmission purpose
* * * * *
Maximum Ratings (Ta = 25C)
Characteristics Forward current Pulse forward current Power dissipation Reverse voltage Operating temperature range Storage temperature range Soldering temperature (5 s), (Note 2) Symbol IF IFP PD VR Topr Tstg Tsol Rating 100 1000 (Note 1) 200 4 -25~85 -30~100 260 Unit mA mA mW V C C C
JEDEC JEITA TOSHIBA
4-5V3
Note 1: f = 100 kHz, duty = 1% Note 2: Soldering must be performed under the stopper.
Pin Connection
1 2 1. Anode 2. Cathode
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TLN233
Optical and Electrical Characteristics (Ta = 25C)
Characteristics Forward voltage Reverse current Radiant intensity Radiant power Cut-off frequency Peak emission wavelength Half-angle value Symbol VF IR IE PO fc lP
1 q 2
Test Condition IF = 100 mA VR = 4 V IF = 50 mA IF = 50 mA IF = 50 mA + 5 mAP-P IF = 50 mA IF = 50 mA (Note 3)
Min 3/4 3/4 46 3/4 3/4 3/4 3/4
Typ. 1.6 3/4 80 30 15 870 13
Max 2.0 60 3/4 3/4 3/4 3/4 3/4
Unit V mA mW/sr mW MHz nm
Note 3: Frequency when modulation light power decreases by 3dB from 1 MHz.
Handling Precautions
* * * Soldering must be performed under the stopper. When forming the leads, bend each lead under the 5 mm of package body. Soldering must be performed after the leads have been formed. The radiant intensity decrease over time due to current flowing in the infrared LED. When designing circuits, the device must take into account the change in radiant intensity over time. The change in radiant intensity is equal to the reciprocal of the change in LED infrared optical output. IE (t) P o (t) = IE (0) P o (0)
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TLN233
IF - Ta
120 100 75C 100
IF - VF
(typ.)
(mA)
(mA)
-25C 10 85C 0C Ta = 25C
IF Allowable forward current
80
60
Forward current IF
1
50C
40
0.1
20
0 0
20
40
60
80
100
0.01 0.8
1
1.2
1.4
1.6
1.8
2
Ambient temperature Ta (C)
Forward voltage
VF
(V)
VF - Ta
1.8 1.7
(typ.)
1000
IFP - VFP
(typ.)
(mA) IFP
50 mA 30 mA 70 mA
(V)
100 mA 1.6 1.5 1.4 1.3 1.2 1.1 1 -50 IF = 10 mA
300
VF
100
Pulse forward current
Forward voltage
30
10 Pulse width < 100 ms = Repetitive frequency = 100 Hz Ta = 25C
3
-25
0
25
50
75
100
1 0
1
2
3
4
5
Ambient temperature Ta (C)
Pulse forward voltage VFP (V)
IFP - Pw
10000 1.2 Ta = 25C 3000 f = 100 Hz 200 Hz 300 500 Hz 1 kHz 2 kHz 100 5 kHz 10 kHz 30 1.0
Relative IE - IFP
Pulse width = 1 ms Duty = 10% Ta = 25C
Allowable pulse forward current IFP
(mA)
1000
Relative radiant intensity
0.8
0.6
0.4
0.2
10 1
10
100
1000
10000
0 0
200
400
600
800
1000
1200
Pulse width
Pw
(ms)
Pulse forward current
IFP
(mA)
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TLN233
Wavelength characteristic
1 IF = 50 mA 0.8 10 IF = 50 mA
Relative IE - Ta
(typ.)
0.6
Relative radiant intensity
Relative power intensity
3
1
0.4
0.2
0.3
0 700
740
780
820
860
900
940
980
0.1 -50
-25
0
25
50
75
100
Wavelength l
(nm)
Ambient temperature Ta (C)
Radiation pattern
(typ.)
Ta = 25C
20 30 40 50 60 70 80 90
10
0
10
20 30 40 50 60 70 80 90 1.0
0
0.2
0.4
0.6
0.8
Relative radiant power
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TLN233
RESTRICTIONS ON PRODUCT USE
000707EAC
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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