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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA2756GR
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The PA2756GR is Dual N-channel MOS Field Effect Transistor designed for switching applications.
PACKAGE DRAWING (Unit: mm)
8 5 1 : Source 1 2 : Gate 1 7, 8: Drain 1 3 : Source 2 4 : Gate 2 5, 6: Drain 2 6.0 0.3 4.4
+0.10 -0.05
FEATURES
* Low on-state resistance RDS(on)1 = 105 m MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 150 m MAX. (VGS = 4.0 V, ID = 2.0 A) * Low Ciss: Ciss = 260 pF TYP. * Built-in G-S protection diode against ESD * Small and surface mount package (Power SOP8)
1
4 5.37 MAX.
1.44
0.8
1.8 MAX.
0.05 MIN.
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
0.15
0.5 0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 -0.05
0.12 M
PA2756GR
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC)
Note1 Note2 Note1 Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
60 20 4.0 16 1.6 2.0 150 -55 to +150 4.0 1.6 1.6
V V A A W W C C A mJ mJ
Gate 1
EQUIVALENT CIRCUIT
Drain 1 Drain 2
Drain Current (pulse)
Total Power Dissipation (1 unit) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3
Total Power Dissipation (2 units)
Body Diode Gate 2
Body Diode
Gate Protection Diode
Source 1
Gate Protection Diode
Source 2
IAS EAS EAR
Repetitive Avalanche Energy Notes 1. 2. 3. 4.
Note4
Mounted on ceramic substrate of 2000 mm2 x 2.2 mm PW 10 s, Duty Cycle 1% Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20 0 V IAR 4.0 A, Tch 150C
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. G17407EJ1V0DS00 (1st edition) Date Published January 2005 NS CP(K) Printed in Japan
2005
PA2756GR
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 60 V, VGS = 0 V VGS = 18 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.0 A VGS = 10 V, ID = 2.0 A VGS = 4.0 V, ID = 2.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 30 V, ID = 2.0 A VGS = 10 V RG = 10
MIN.
TYP.
MAX. 10 10
UNIT
A A
V S
1.5 2.0
2.0
2.5
Drain to Source On-state Resistance
85 106 260 65 20 14 5 80 30
105 150
m m pF pF pF ns ns ns ns nC nC nC V ns nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = 48 V VGS = 10 V ID = 4.0 A IF = 4.0 A, VGS = 0 V IF = 4.0 A, VGS = 0 V di/dt = 100 A/s
6 1 1.5 0.9 24 22
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90% 90% 10% 10%
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet G17407EJ1V0DS
PA2756GR
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 120 PT - Total Power Dissipation - W 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
2.8 2.4 2 1.6 1.2 0.8 0.4 0 0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - C
2 units 1 unit
Mounted on ceramic substrate of 2000 mm2 x 2.2 mm
100
ID(pulse) PW = 100 s
ID - Drain Current - A
10
ID(DC) 1 ms
1
RDS(on) Limited (at VGS = 10 V) Power Dissipation Limited Single pulse, 1unit TA = 25C Mounted on ceramic substrate of 2000 mm x 2.2 mm
2
0.1
10 ms 100 ms
0.01 0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 78.1C/W
10
1
Single pulse, 1unit TA = 25C Mounted on ceramic substrate of 2000 mm2 x 2.2 mm 1m 10 m 100 m 1 10 100 1000
0.1 100
PW - Pulse Width - s
Data Sheet G17407EJ1V0DS
3
PA2756GR
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS
20 Pulsed
100 10 VDS = 10 V Pulsed TA = -40C 25C 75C 125C 150C
ID - Drain Current - A
15
ID - Drain Current - A
1 0.1 0.01 0.001
10
VGS = 10 V
5
4.0 V
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S 3 VGS(off) - Gate Cut-off Voltage - V 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 175 Tch - Channel Temperature - C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VDS = 10 V ID = 1 mA
0.0001 0 1 2 3 4 5
VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
10 VDS = 10 V Pulsed 1 TA = -40C 25C 75C 125C 150C
0.1
0.01 0.01
0.1
1
10
100
ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - m
200 Pulsed 180 160 140 120 100 80 60 0.1 1 10 100
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
200 180 160 140 120 100 80 60 0 1 2 3 4 5 6 7 8 9 10 11 12
VGS - Gate to Source Voltage - V
Pulsed
ID = 4.0 A 2.0 A 0.8 A
VGS = 4.0 V
10 V
4
Data Sheet G17407EJ1V0DS
PA2756GR
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - m
200 180 160 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - C SWITCHING CHARACTERISTICS
ID = 2.0 A Pulsed VGS = 4.0 V
Ciss 100 Coss
10 V
10 VGS = 0 V f = 1 MHz 1 0.1 1 10
Crss
100
VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns
60
12 VDD = 48 V 30 V 12 V 10 8 6 VGS 4 2 0 0 1 2 3 4 5 6 7
QG - Gate Charge - nC REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT VGS - Gate to Source Voltage - V
VDD = 30 V VGS = 10 V RG = 10 100 td(off) tf 10 td(on) tr
ID = 4.0 A 50 40 30 20 10 0
VDS
1 0.1 1 10 100
ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
IF - Diode Forward Current - A
Pulsed VGS = 10 V 4.0 V 0V
trr - Reverse Recovery Time - ns
1000 VGS = 0 V di/dt = 100 A/s 100
10
1
10
0.1
0.01 0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
1 0.1 1 10 100 IF - Diode Forward Current - A
Data Sheet G17407EJ1V0DS
5
PA2756GR
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 IAS - Single Avalanche Current - A Energy Derating Factor - % 120 100 80 60 40 20 0 10 100 1m 10 m 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - C VDD = 30 V RG = 25 VGS = 200 V IAS 4.0 A SINGLE AVALANCHE ENERGY DERATING FACTOR
10 IAS = 4.0 A EAS = 1.6 mJ 1 VDD = 30 V RG = 25 VGS = 200 V Starting Tch = 25C
0.1
L - Inductive Load - H
6
Data Sheet G17407EJ1V0DS
PA2756GR
* The information in this document is current as of January, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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