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| PD - 94314 IRGC5B120KB IRGC5B120KB IGBT Die in Wafer Form Features * GEN5 Non Punch Through (NPT) Technology * Low VCE(on) * 10s Short Circuit Capability * Square RBSOA * Positive VCE(on) Temperature Coefficient Benefits * Benchmark Efficiency for Motor Control * Rugged Transient Performance * Excellent Current Sharing in Parallel Operation * Qualified for Industrial Market 1200 V IC(nom) = 5A VCE(on) typ. = 2.55V @ IC(nom) @ 25C Motor Control IGBT Short Circuit Rated 150mm Wafer C G E Electrical Characteristics ( Wafer Form ) Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Guaranteed (Min/Max) Collector-to-Emitter Saturation Voltage 1.79V Min., 2.22V Max. Collector-to-Emitter Breakdown Voltage 1200V Min. Gate Threshold Voltage 4.4V Min., 6.0V Max. Zero Gate Voltage Collector Current 5.0 A Max. Gate-to-Emitter Leakage Current 1.1 A Max. Test Conditions IC = 2.5A, TJ = 25C, VGE = 15V TJ = 25C, ICES = 100A, VGE = 0V VGE = VCE , TJ =25C, IC =125A TJ = 25C, VCE = 1200V TJ = 25C, VGE = +/- 20V Mechanical Data Norminal Backmetal Composition, Thickness: Norminal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment: Recommended Die Attach Conditions Al-Ti-NiV-Ag ( 1kA-1kA-4kA-6kA ) 99% Al, 1% Si (4 microns) 0.112" x 0.150" 150mm, with std. < 100 > flat 185 +/- 15 Microns 01-5430 100 Microns 0.25mm Diameter Minimum Consistent throughout same wafer lot Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C NOT ES: 1. ALL DIME NSIONS ARE SHOWN IN MILLIME TE RS [INCHES ]. 2. CONT ROLLING DIME NSION: [INCH]. 3. LE TT ER DE SIGNAT ION: S = SOURCE G = GAT E 3.810 [.150] 0.646 [.025] EMITT ER 2.325 [.091] SK = S OURCE KELVIN IS = CURRENTS ENSE < 0.635 T OLERANCE = + /- 0.013 < [.0250] TOLERANCE = + /- [.0005] > 0.635 T OLERANCE = + /- 0.025 > [.0250] TOLERANCE = + /- [.0010] < 1.270 T OLERANCE = + /- 0.102 < [.050] T OLERANCE = + /- [.004] > 1.270 T OLERANCE = + /- 0.203 > [.050] T OLERANCE = + /- [.008] E = EMIT T ER Die Outline 2.845 [.112] 1.454 [.057] 4. DIME NSIONAL T OLERANCES: BONDING PADS: WIDT H & LE NGT H G OVERALL DIE: WIDT H 0.617 [.024] & LE NGT H 10/02/01 |
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