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| PD - 94316 IRGC8B120KB IRGC8B120KB IGBT Die in Wafer Form Features * GEN5 Non Punch Through (NPT) Technology * Low VCE(on) * 10s Short Circuit Capability * Square RBSOA * Positive VCE(on) Temperature Coefficient Benefits * Benchmark Efficiency for Motor Control * Rugged Transient Performance * Excellent Current Sharing in Parallel Operation * Qualified for Industrial Market 1200 V IC(nom) = 8A VCE(on) typ. = 2.32V @ IC(nom) @ 25C Motor Control IGBT Short Circuit Rated 150mm Wafer C G E Electrical Characteristics ( Wafer Form ) Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Guaranteed (Min/Max) Collector-to-Emitter Saturation Voltage 1.83V MIn., 2.27V Max. Collector-to-Emitter Breakdown Voltage 1200V Min. Gate Threshold Voltage 4.4V Min., 6.0V Max. Zero Gate Voltage Collector Current 5.0 A Max. Gate-to-Emitter Leakage Current 1.1 A Max. Test Conditions IC = 5.0A, TJ = 25C, VGE = 15V TJ = 25C, ICES = 100A, VGE = 0V VGE = VCE , TJ =25C, IC =125A TJ = 25C, VCE = 1200V TJ = 25C, VGE = +/- 20V Mechanical Data Norminal Backmetal Composition, Thickness: Norminal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment: Recommended Die Attach Conditions Al-Ti-NiV-Ag ( 1kA-1kA-4kA-6kA ) 99% Al, 1% Si (4 microns) 0.133" x 0.195" 150mm, with std. < 100 > flat 185 +/- 15 Microns 01-5429 100 Microns 0.25mm Diameter Minimum Consistent throughout same wafer lot Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C Die Outline 3.378 [.133] 1.953 [.077] NOT ES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHE S]. 2. CONTROLLING DIMENS ION: [INCH]. 3. LET TE R DES IGNAT ION: S = S OURCE G = GATE SK = SOURCE KELVIN IS = CURRENT S ENS E < 0.635 TOLE RANCE = + /- 0.013 < [.0250] T OLERANCE = + /- [.0005] > 0.635 TOLE RANCE = + /- 0.025 > [.0250] T OLERANCE = + /- [.0010] < 1.270 TOLE RANCE = + /- 0.102 < [.050] TOLE RANCE = + /- [.004] > 1.270 TOLE RANCE = + /- 0.203 > [.050] TOLE RANCE = + /- [.008] E = E MITT ER 4.953 [.195] EMITT ER 0.696 [.027] 3.473 [.136] 4. DIMENS IONAL T OLERANCES: BONDING PADS: WIDT H & LE NGTH G OVERALL DIE : WIDT H 0.701 [.027] & LE NGTH 10/02/01 |
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